Nexperia USA Inc. PSMN4R5-40BS,118

Overview

PSMN4R5-40BS from Nexperia is a standard-level N-channel MOSFET in D2PAK (SOT404) package, rated for 40 V V_DS, 4.5 mΩ R_DS(on) at 10 V V_GS and 25 °C, 100 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-current power switch in industrial DC-DC converters and server power supplies.

For engineers reviewing the PSMN4R5-40BS datasheet, PSMN4R5-40BS pinout, PSMN4R5-40BS application, or PSMN4R5-40BS equivalent, this device is selected for high-efficiency load switching where low conduction loss, robust avalanche energy (152 mJ), and compatibility with standard 10 V gate drive are critical design requirements.

Technical Context

This MOSFET employs planar silicon technology optimized for low R_DS(on) and fast switching with Q_G(tot) = 35 nC and Q_GD = 8.8 nC. Its gate threshold voltage ranges from 2–4 V at 25 °C and remains functional up to 175 °C (V_GS(th) ≥1 V), enabling stable operation in thermally demanding environments.

The device features an integrated source-drain diode with V_SD = 0.75–1.2 V at 25 A and t_rr = 40 ns, supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal resistance from junction to mounting base is 0.65 K/W typical, enabling high-power dissipation when mounted on a heatsink.

Key Specifications

Pinout & Package

PSMN4R5-40BS uses the SOT404 (D2PAK) package: plastic single-ended surface-mounted outline with 3 leads (one lead cropped), featuring an exposed mounting base electrically connected to the drain terminal for thermal and electrical integration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF1404PBF and STP40NF10L, PSMN4R5-40BS uniquely balances 100 A current, 4.5 mΩ conduction loss, 175 °C operation, and D2PAK thermal performance-making it optimal for compact, high-power industrial and server power stages where thermal density and reliability are prioritized over raw peak current or logic-level convenience.

Availability

PSMN4R5-40BS is available at Aetrix Electronics and suitable for DC-DC converters, server power supplies, and motor control systems requiring stable component supply, long-lifecycle assurance, and traceable sourcing for production ramp-up.

Supply support for PSMN4R5-40BS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-qualified components.

This part belongs to Nexperia's standard-level power MOSFET product line, engineered for industrial and communications equipment where efficiency, thermal robustness, and gate-drive simplicity are essential in high-current switching applications.

FAQ

Is PSMN4R5-40BS suitable for synchronous rectification in a 48 V buck converter?

Yes. With its 4.5 mΩ R_DS(on), 40 V V_DS, and 100 A continuous rating, it delivers low conduction loss in high-current synchronous rectifier positions. The 40 ns reverse recovery time and 0.75–1.2 V V_SD support efficient freewheeling, and its 175 °C rating ensures stability under sustained 60–80 A loads at elevated ambient temperatures.

What is the maximum recommended gate resistor for driving PSMN4R5-40BS at 300 kHz?

A 4.7 Ω external gate resistor is validated per datasheet Figure 14 for 10 V drive, yielding ~19 ns t_d(on) and ~9 ns t_f. At 300 kHz, this value balances switching loss reduction and EMI control; values below 2.2 Ω increase dV/dt-induced noise, while above 10 Ω raises switching losses disproportionately given its 35 nC Q_G(tot).

Can PSMN4R5-40BS replace a TO-220 MOSFET in an existing layout?

No direct footprint replacement is possible: PSMN4R5-40BS uses SOT404 (D2PAK), which has different pad dimensions, thermal pad layout, and lead configuration than TO-220. Mechanical redesign is required to accommodate the D2PAK outline and mounting base soldering, though electrical performance may improve due to lower R_th(j-mb).

Does PSMN4R5-40BS require a negative gate voltage for safe turn-off in high-dv/dt environments?

No. Its V_GS rating is ±20 V, and standard-level threshold (2–4 V) ensures robust noise immunity with 0 V turn-off. Negative gate bias is unnecessary; however, a 10 kΩ pull-down resistor from gate to source is recommended to prevent spurious turn-on from capacitive coupling in high-dv/dt motor drive or SMPS layouts.