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Nexperia USA Inc. PSMN4R5-40PS,127

Part No.:
PSMN4R5-40PS,127
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixPSMN4R5-40PS,127.pdf
Description:
MOSFET N-CH 40V 100A TO220AB
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Payment:
Payment
Shipping:
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Inventory:10

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Product details

Overview

PSMN4R5-40PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 40 V drain-source voltage, 4.6 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and qualified to 175 °C junction temperature. It delivers 100 A continuous drain current at Tmb = 25 °C and supports high-efficiency power switching in industrial DC-DC converters and motor control stages.

For engineers reviewing the PSMN4R5-40PS datasheet, PSMN4R5-40PS pinout, PSMN4R5-40PS application, or PSMN4R5-40PS equivalent, key selection criteria include its low conduction loss (3.9–4.6 mΩ), gate-threshold range (2–4 V at 25 °C), avalanche energy rating (152 mJ), and thermal resistance (0.65–1 K/W from junction to mounting base).

Technical Context

This MOSFET employs a planar silicon process optimized for standard-level gate drive compatibility (VGS = 10 V), with a gate threshold voltage of 2–4 V at 25 °C and stable operation up to 175 °C. Its low RDS(on) and 8.8 nC QGD support fast switching with reduced Miller-induced turn-off delay.

The device integrates an intrinsic body diode with 0.75–1.2 V forward voltage at 25 A and 40 ns reverse recovery time, enabling synchronous rectification and freewheeling in hard-switched topologies. Thermal design relies on direct mounting to heatsinks via the drain-connected metal base (Rth(j-mb) = 0.65–1 K/W).

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V - Maximum blocking voltage before avalanche; defines use in ≤40 V bus systems (e.g., 12 V/24 V/36 V industrial rails).
RDS(on) 4.6 mΩ max at VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1 W conduction loss at 100 A, critical for high-current load switching.
ID (cont) 100 A at Tmb = 25 °C - Requires heatsink mounting; derates to 96 A at Tmb = 100 °C per Figure 1.
QGD 8.8 nC - Low gate-drain charge minimizes Miller plateau duration, improving switching speed and reducing Esw in hard-switched converters.
EAS 152 mJ (unclamped) - Supports single-pulse inductive energy handling without external snubbers in motor drive or relay driving.
Rth(j-mb) 0.65–1 K/W - Direct thermal path to heatsink enables compact thermal design; 100 A operation requires ≤1.5 K/W total system thermal resistance.
VGS(th) 2–4 V at Tj = 25 °C - Compatible with standard logic-level drivers; retains >1 V threshold up to 175 °C for robust turn-on margin.

Pinout & Package

PSMN4R5-40PS uses the TO-220AB (SOT78) plastic single-ended package with heatsink mounting and drain-connected metal base. The mounting base serves as both mechanical interface and electrical connection to the drain terminal.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control electrode; requires 10 V drive for full enhancement; internal RG = 0.97 Ω limits dV/dt sensitivity.
2 (D) Drain Main high-side current path; electrically tied to mounting base-must be isolated from heatsink unless system ground reference permits.
3 (S) Source Return path for load current; referenced to gate drive common; forms source-drain diode anode (VSD = 0.75–1.2 V).

Key Features

Feature Design Value
High-temperature qualification Rated for continuous operation up to 175 °C junction temperature-enables use in sealed enclosures or high-ambient industrial environments.
Low RDS(on) × QG figure-of-merit 4.6 mΩ × 42.3 nC = 195 mΩ·nC-balances conduction and switching losses for 100–500 kHz DC-DC applications.
Robust avalanche capability 152 mJ non-repetitive EAS allows safe operation under inductive turn-off transients without external clamping.
Standard-level gate drive Operates fully enhanced with 10 V gate drive-compatible with legacy microcontroller GPIOs and discrete driver ICs without level-shifting.

Applications

DC-DC Converters Motor Control

Use Scenario: High-current buck converter in server power supply delivering 50–100 A at 12 V output.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch operating at 200–300 kHz with forced-air cooling.

Use Value: 4.6 mΩ RDS(on) reduces conduction loss to <0.5 W at 100 A, improving efficiency by ≥0.8% versus 6 mΩ alternatives.

Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for industrial automation.

IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed regulation at ≤20 kHz.

Use Value: 152 mJ avalanche rating absorbs flyback energy during PWM dead-time, eliminating need for external TVS diodes.

Load Switching Server Power Supplies

Use Scenario: Hot-swap OR-ing FET in redundant 48 V input distribution for telecom equipment.

IC Role / Device Role / Timing Role: Bidirectional load switch managing inrush and fault isolation with external gate control.

Use Value: 100 A continuous rating and 545 A pulsed current support handle 2× inrush peaks while maintaining <10 mΩ effective on-resistance.

Use Scenario: Main 12 V VRM output stage in enterprise-grade server motherboard.

IC Role / Device Role / Timing Role: High-side power switch in multiphase buck topology with digital PWM controller.

Use Value: 0.65 K/W Rth(j-mb) enables direct heatsink mounting-reducing thermal interface layers and improving long-term reliability at 175 °C Tj.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF1404PBF RDS(on) = 4.0 mΩ @ 10 V but higher QG = 131 nC; TO-220 package with isolated tab. Higher switching loss at >100 kHz; better suited for lower-frequency (<50 kHz) high-current linear loads. Select when lowest conduction loss dominates and switching frequency is ≤50 kHz.
STP40NF10L Logic-level (VGS(th) = 1–2.5 V); RDS(on) = 22 mΩ @ 4.5 V; higher on-resistance at 10 V vs. PSMN4R5-40PS. Enables 5 V gate drive but sacrifices conduction efficiency-used where microcontroller GPIO drives directly without buffer. Select only when gate drive voltage is constrained to ≤5 V and current <30 A.

Compared with IRF1404PBF and STP40NF10L, PSMN4R5-40PS offers optimal balance of low RDS(on), moderate QG, and high-temperature ruggedness-making it preferred for 100–300 kHz industrial DC-DC and motor control where thermal management and reliability are prioritized over ultra-low gate charge.

Availability

PSMN4R5-40PS is available at Aetrix Electronics and suitable for DC-DC converters, motor control systems, and server power supplies requiring stable component supply across extended production lifecycles.

Supply support for PSMN4R5-40PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

This device belongs to Nexperia's standard-level power MOSFET portfolio, engineered for cost-sensitive industrial and communications power systems demanding robust thermal performance and proven field reliability.

FAQ

Is PSMN4R5-40PS suitable for surface-mount PCB assembly?

No. PSMN4R5-40PS uses the through-hole TO-220AB (SOT78) package with a metal mounting base designed for mechanical attachment to external heatsinks. It requires hole-mounting and cannot be reflow soldered or used in SMT processes. Thermal performance depends on proper torque and thermal interface material applied to the mounting base.

What is the maximum allowable gate-source voltage for reliable operation?

The absolute maximum VGS is ±20 V per the datasheet limiting values table. For reliable long-term operation, gate drive should be limited to −10 V to +15 V, with recommended steady-state bias of 10 V for full enhancement. Exceeding ±15 V risks oxide degradation, especially at elevated temperatures.

Does the body diode support continuous reverse recovery in hard-switched circuits?

Yes-the integrated source-drain diode has trr = 40 ns and Qr = 33 nC at 50 A, enabling use in freewheeling and synchronous rectification. However, its softness factor is not specified, so snubber networks may be needed in high-dI/dt (>100 A/µs) applications to limit voltage overshoot.

How does RDS(on) change with junction temperature?

RDS(on) increases with temperature: 3.9 mΩ at 25 °C, 4.6 mΩ at 25 °C (max), and up to 6.7 mΩ at Tj = 100 °C. Figure 13 shows normalized RDS(on) rising ~1.7× from 25 °C to 175 °C, requiring thermal design to maintain Tj < 125 °C for minimal conduction loss drift.

PSMN4R5-40PS,127 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
42.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2683 pF @ 12 V
FET Feature:
-
Power Dissipation (Max):
148W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

PSMN4R5-40PS,127 FAQ

1.How can I place an order for PSMN4R5-40PS,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN4R5-40PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN4R5-40PS,127 reliable?

The price and inventory of PSMN4R5-40PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN4R5-40PS,127 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN4R5-40PS,127 transactions.

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PSMN4R5-40PS,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN4R5-40PS,127 order is processed, you will receive an email with the shipment details and tracking number.

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5.How can I obtain technical support or documentation for PSMN4R5-40PS,127?

For technical support, including PSMN4R5-40PS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN4R5-40PS,127 requirements.

6.How does Aetrix verify that PSMN4R5-40PS,127 is sourced from the original manufacturer or authorized distributors?

All PSMN4R5-40PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN4R5-40PS,127 meets industry standards.

7.What is the process for return or replacement of PSMN4R5-40PS,127?

All PSMN4R5-40PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN4R5-40PS,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN4R5-40PS,127 part is unused and in its original packaging.

Return procedure for PSMN4R5-40PS,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PSMN4R5-40PS,127 Tags

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