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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN4R5-80YSFX

Name: PSMN4R5-80YSFX
Brand: Nexperia USA Inc.
SKU: PSMN4R5-80YSFX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN4R5-80YSFX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN4R5-80YSFX.pdf

Description:: NEXTPOWER 80/100V MOSFETS

Quantity:: RFQ Add To RFQ list

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Inventory:1,155

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Product details

Overview

PSMN4R5-80YSFX from Nexperia is a NextPower 80 V, 4.5 mΩ N-channel MOSFET in LFPAK56 (SOT669) package, rated for 100 A continuous drain current at T_mb = 25 °C and qualified to 175 °C junction temperature. It features low Q_G × R_DS(on) figure-of-merit (60 nC × 4.5 mΩ), strong unclamped avalanche energy rating (278 mJ), and wave-solderable Ha-free RoHS-compliant construction. It serves as a primary-side switch or synchronous rectifier in high-efficiency DC-DC converters.

For engineers reviewing the PSMN4R5-80YSFX datasheet, PSMN4R5-80YSFX pinout, PSMN4R5-80YSFX application, or PSMN4R5-80YSFX equivalent, key selection criteria include R_DS(on) at 100 °C (5.4–6.8 mΩ), gate charge (Q_G(tot) = 30–90 nC), thermal resistance (R_th(j-mb) = 0.56–0.63 K/W), and avalanche ruggedness (E_AS = 278 mJ).

Technical Context

This MOSFET employs a trench-gate silicon process optimized for fast switching with low conduction loss. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V at 25 °C and exhibits negative temperature coefficient (−8 mV/K), enabling stable parallel operation. The device integrates a robust body diode with Q_r = 24.5 nC and t_rr = 33 ns under specified conditions.

The LFPAK56 package uses a copper-clip die attach and double-sided cooling via mounting base (drain-connected) and top-side source terminals. Thermal performance is validated with R_th(j-mb) ≤ 0.63 K/W and supports >238 W total power dissipation at T_mb = 25 °C - enabled by low-inductance 4-terminal layout and optimized PCB footprint per JEDEC MO-235.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V maximum drain-source voltage - defines safe blocking capability in 48 V and 60 V bus systems
R_DS(on) @ 25 °C	3.5–4.5 mΩ - enables <1.1 W conduction loss at 25 A, critical for high-current synchronous rectification
R_DS(on) @ 100 °C	5.4–6.8 mΩ - reflects real-world on-resistance under thermal stress in enclosed power supplies
Q_G(tot)	30–90 nC - determines gate drive power and switching speed in hard-switched topologies up to 500 kHz
E_AS	278 mJ - provides margin against inductive turn-off transients in flyback and half-bridge configurations
R_th(j-mb)	0.56–0.63 K/W - enables direct thermal coupling to heatsink or copper plane, reducing junction-to-case ΔT
I_D (continuous)	100 A @ T_mb = 25 °C - verified in application testing; limited in practice by PCB copper area and ambient cooling

Pinout & Package

PSMN4R5-80YSFX uses the LFPAK56 (SOT669) package: a 4-terminal, single-ended surface-mount plastic package with exposed mounting base (drain-connected), optimized for high-power density and wave soldering. Dimensions conform to JEDEC MO-235 standard, with 1.27 mm lead pitch and 4.2 mm × 3.8 mm footprint.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three paralleled source terminals reduce package inductance and improve current sharing in high-di/dt switching
4	Gate (G)	Single gate input with typical R_G = 1.13 Ω - supports standard 10 V gate drivers without external series resistance
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically connected to drain; serves as primary thermal path and high-current return node

Key Features

Feature	Design Value
Low Q_rr	24.5 nC recovered charge - reduces voltage spikes and EMI in synchronous rectifier operation
Avalanche-rated & 100% tested	278 mJ E_AS with full production screening - eliminates need for external snubbers in clamp-based topologies
LFPAK56 wave-solderable	Validated footprint per Fig. 21 - supports automated through-hole-compatible assembly without reflow-only constraints
High-temperature qualification	Rated for T_j = 175 °C - enables operation in sealed industrial enclosures or automotive under-hood adjacent zones
Low Q_G × R_DS(on)	Typ. 60 nC × 4.5 mΩ = 270 mΩ·nC - balances switching loss and conduction loss for 100–300 kHz DC-DC designs

Applications

Synchronous Rectifier in AC-DC

Primary-Side Switch in DC-DC

Use Scenario: Used in secondary-side synchronous rectification of LLC resonant converters delivering 65–100 W to USB-PD devices.

IC Role / Device Role / Timing Role: N-channel MOSFET replacing Schottky diode; driven by transformer-coupled or controller-synchronized gate signal.

Use Value: Reduces forward conduction loss by >40% vs. 40 V Schottky, improving efficiency from 92% to 94.5% at full load.

Use Scenario: Primary-side high-side switch in 36–75 V input isolated forward or active-clamp forward converters for telecom power modules.

IC Role / Device Role / Timing Role: Main power switch handling 100 A peak currents during PWM on-time; operates at 200–300 kHz.

Use Value: Low R_DS(on) and Q_G minimize combined conduction + switching losses, enabling >95% efficiency at 500 W output.

BLDC Motor Control

USB-PD Adapter Power Stage

Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for cordless power tools and e-bikes.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter; commutated at 10–20 kHz with dead-time control.

Use Value: Robust avalanche rating withstands back-EMF transients during phase commutation; 175 °C rating supports compact heatsink design.

Use Scenario: Clamp diode replacement and main switch in 100 W GaN-assisted USB-PD 3.1 adapters with dual active clamping.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary and auxiliary switch in active clamp circuit.

Use Value: Wave-solderable LFPAK56 simplifies mixed-technology assembly; low Q_rr prevents cross-conduction in high-frequency clamp cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 80 V N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP040N08N	R_DS(on) = 4.0 mΩ @ 25 °C but higher Q_G(tot) = 105 nC; TO-220FP package with higher R_th(j-c) = 1.2 K/W	Limited to lower-frequency (<150 kHz) applications due to slower switching; requires heatsink mounting	Prefer when board space allows discrete heatsinking and gate drive strength exceeds 2 A peak.
Vishay SIHF040N08	R_DS(on) = 4.2 mΩ @ 25 °C; D²PAK package; no 100% avalanche test; E_AS not specified	Not recommended for unclamped inductive switching; requires external avalanche protection in flyback designs	Select only for cost-sensitive consumer adapters where transient robustness is verified via system-level testing.

Compared with PSMN4R5-80YSFX, IPP040N08N trades higher gate drive demand for legacy package compatibility, while SIHF040N08 sacrifices avalanche assurance for lower unit cost - neither matches the integrated thermal, reliability, and manufacturability profile of the LFPAK56 solution.

Availability

PSMN4R5-80YSFX is available at Aetrix Electronics and suitable for high-efficiency USB-PD adapters, industrial DC-DC converters, and BLDC motor drives requiring stable component supply across multi-year production cycles.

Supply support for PSMN4R5-80YSFX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors - high-volume, high-reliability standard products serving automotive, industrial, mobile, and computing markets.

The NextPower series targets high-efficiency power conversion with enhanced ruggedness and thermal performance; PSMN4R5-80YSFX specifically addresses the need for 80 V, low-R_DS(on), high-current MOSFETs in compact, wave-solderable packages.

FAQ

What is the maximum continuous drain current rating for PSMN4R5-80YSFX?

The datasheet specifies 100 A continuous drain current at T_mb = 25 °C (Fig. 2), demonstrated in application testing. In real designs, this value is constrained by PCB copper area, heatsinking, and ambient temperature - typical derating yields 60–80 A at T_mb = 100 °C.

Is PSMN4R5-80YSFX suitable for avalanche operation without external protection?

Yes - it is avalanche-rated and 100% tested to 278 mJ (E_AS) under unclamped inductive switching (ID = 48 A, V_sup ≤ 80 V). This enables reliable operation in flyback and resonant topologies without snubber circuits, provided gate drive remains active during avalanche events.

Can PSMN4R5-80YSFX be wave-soldered, and what footprint is required?

Yes - its LFPAK56 (SOT669) package is explicitly qualified for wave soldering. The recommended footprint is defined in Fig. 21: 4.826 mm × 1.78 mm solder lands with 1.27 mm pitch, 0.635 mm pad width, and 2.1 mm spacing between inner pads - matching JEDEC MO-235 mechanical outline.

How does the thermal resistance of PSMN4R5-80YSFX compare to traditional SO-8 MOSFETs?

Its R_th(j-mb) is 0.56–0.63 K/W - approximately 3× lower than typical SO-8 MOSFETs (~1.8 K/W). This results from the copper-clip construction and direct mounting base thermal path, enabling >238 W power dissipation at T_mb = 25 °C versus ~50 W for standard SO-8 equivalents.

PSMN4R5-80YSFX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6009 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 238W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN4R5-80YSFX FAQ

1.How can I place an order for PSMN4R5-80YSFX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN4R5-80YSFX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN4R5-80YSFX reliable?

The price and inventory of PSMN4R5-80YSFX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN4R5-80YSFX is usually 5 days.

3.What payment methods are accepted for PSMN4R5-80YSFX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN4R5-80YSFX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN4R5-80YSFX?

PSMN4R5-80YSFX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN4R5-80YSFX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN4R5-80YSFX?

For technical support, including PSMN4R5-80YSFX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN4R5-80YSFX requirements.

6.How does Aetrix verify that PSMN4R5-80YSFX is sourced from the original manufacturer or authorized distributors?

All PSMN4R5-80YSFX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN4R5-80YSFX meets industry standards.

7.What is the process for return or replacement of PSMN4R5-80YSFX?

All PSMN4R5-80YSFX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN4R5-80YSFX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN4R5-80YSFX part is unused and in its original packaging.

Return procedure for PSMN4R5-80YSFX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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