NXP Semiconductors PSMN4R6-100XS,127

Overview

PSMN4R6-100XS from Nexperia is a standard-level N-channel Power MOSFET in TO-220F (SOT186A) package, rated for 100 V drain-source voltage, 4.6 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-efficiency main switch or synchronous rectifier in industrial power conversion stages.

For engineers reviewing the PSMN4R6-100XS datasheet, PSMN4R6-100XS pinout, PSMN4R6-100XS application, or PSMN4R6-100XS equivalent, this page delivers verified electrical specs, thermal performance data, isolation characteristics, gate drive compatibility, and real-world use context for AC/DC supplies, server PSUs, and motor control designs.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low conduction loss (R_DS(on) = 4.6 mΩ max at 25 °C) and robust switching behavior (Q_G(tot) = 153 nC, Q_GD = 40 nC). Its isolated mounting base enables direct heatsink attachment without insulating hardware, supporting high-power density layouts.

The device features standard-level gate drive compatibility (V_GS(th) = 2–4 V typ), avalanche ruggedness (E_DS(AL)S = 673 mJ), and integrated source-drain diode with t_rr = 63 ns and Q_r = 173 nC - enabling reliable operation in hard-switched and synchronous rectification topologies.

Key Specifications

Pinout & Package

PSMN4R6-100XS uses the TO-220F (SOT186A) plastic single-ended package with isolated mounting base (mb), enabling direct heatsink mounting without insulating washers. The package has three leads and one mounting hole.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with STP100N10F7 and IRF540NPBF, PSMN4R6-100XS delivers superior thermal performance via its isolated TO-220F package and lowest R_DS(on) in class, making it optimal for high-efficiency, high-reliability industrial power stages where heatsink integration and avalanche robustness are critical.

Availability

PSMN4R6-100XS is available at Aetrix Electronics and suitable for AC-to-DC power supply equipment, motor control systems, and server power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for PSMN4R6-100XS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division.

The PSMN4R6-100XS belongs to Nexperia's TrenchMOS standard-level PowerMOS family, engineered for high-efficiency switching in industrial, computing, and communications power systems where thermal robustness and gate-drive simplicity are essential.

FAQ

What is the maximum junction temperature rating for PSMN4R6-100XS?

The PSMN4R6-100XS is qualified for continuous operation up to 175 °C junction temperature, as confirmed in the Limiting Values table (Table 4) and General Description section. This rating applies across the full V_DS and I_D operating range and enables deployment in thermally demanding environments such as enclosed industrial drives and high-density server PSUs where ambient temperatures exceed 70 °C. The PSMN4R6-100XS maintains specified R_DS(on) and switching parameters within this range.

Does PSMN4R6-100XS have an isolated package, and what is its isolation voltage rating?

Yes, PSMN4R6-100XS uses the TO-220F (SOT186A) package with an electrically isolated mounting base. Its RMS isolation voltage is rated at 2500 V under 50–60 Hz sinusoidal conditions per Table 6, allowing direct attachment to live-chassis heatsinks in isolated power topologies without additional insulation. This isolation is integral to the package mold compound and mounting base construction - not an add-on feature - and is validated per industry-standard dielectric withstand testing.

What is the typical gate threshold voltage (V_GS(th)) of PSMN4R6-100XS, and how does it vary with temperature?

The PSMN4R6-100XS has a gate-source threshold voltage (V_GS(th)) of 2–4 V at T_j = 25 °C and 1–4.6 V across the full -55 °C to +175 °C junction temperature range, as specified in Table 7. This wide but well-defined window ensures reliable turn-on with standard 5 V or 10 V gate drivers while maintaining noise immunity. The negative temperature coefficient (V_GS(th) decreases as temperature rises) is inherent to silicon MOSFET physics and is fully characterized in Figure 10 of the datasheet.

Can PSMN4R6-100XS be used in synchronous rectification applications, and what diode characteristics support this?

Yes, PSMN4R6-100XS is explicitly recommended for synchronous rectification per its Applications section. Its integrated source-drain diode exhibits V_SD = 0.72–1.2 V at I_S = 10 A and T_j = 25 °C, t_rr = 63 ns, and Q_r = 173 nC - all measured under standardized conditions (Table 7). These values enable efficient commutation with minimal reverse recovery loss, especially when paired with adaptive gate timing control to avoid cross-conduction.

What is the thermal resistance from junction to mounting base (R_th(j-mb)) for PSMN4R6-100XS, and why is this value critical?

The maximum R_th(j-mb) for PSMN4R6-100XS is 2.35 K/W (Table 5), with a typical value of 2.1 K/W. This parameter directly determines how effectively heat flows from the silicon die to the heatsink - lower values mean less temperature rise per watt. For example, at 40 W dissipation, the junction-to-mounting-base temperature rise is only ~94 °C max, leaving ample margin below the 175 °C limit. This makes R_th(j-mb) the dominant thermal metric for heatsink sizing, unlike R_th(j-a) which is highly layout-dependent and less useful for design.