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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN4R6-60BS,118

Name: PSMN4R6-60BS,118
Brand: Nexperia USA Inc.
SKU: PSMN4R6-60BS,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN4R6-60BS,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PSMN4R6-60BS,118.pdf

Description:: MOSFET N-CH 60V 100A D2PAK

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Product details

Overview

PSMN4R6-60BS from Nexperia is a standard-level N-channel MOSFET in D2PAK (SOT404) package, rated for 60 V V_DS, 4.4 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 100 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-current power switch in DC-DC converters, server power supplies, and motor control circuits where low conduction loss and robust avalanche capability are required.

For engineers reviewing the PSMN4R6-60BS datasheet, PSMN4R6-60BS pinout, PSMN4R6-60BS application, or PSMN4R6-60BS equivalent, this device is selected for high-efficiency switching in industrial and communications power systems requiring stable thermal performance up to 175 °C, gate drive compatibility with standard 10 V logic, and validated unclamped avalanche energy of 266 mJ.

Technical Context

This MOSFET uses planar silicon technology optimized for low R_DS(on) and fast switching with controlled Q_G (70.8 nC) and Q_GD (14.8 nC). Its gate threshold voltage ranges from 1 V at 175 °C to 4.8 V at −55 °C, enabling reliable turn-on across wide temperature extremes while maintaining safe margin against spurious conduction.

The device features an integrated source-drain diode with 0.81 V forward voltage at 25 A and 45 ns reverse recovery time, supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal resistance from junction to mounting base is 0.38 K/W typical, enabling high-power dissipation when mounted on a thermally optimized PCB copper plane.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; defines upper limit for bus voltage in buck, boost, and half-bridge applications.
R_DS(on)	4.4 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 50 A, critical for high-current server PSU output stages.
I_D	100 A @ T_mb = 25 °C - Continuous current rating limited by D2PAK package thermal capacity; derates to 99.7 A at T_mb = 100 °C.
E_AS	266 mJ - Non-repetitive avalanche energy at V_GS = 10 V, I_D = 100 A, unclamped - supports robustness against inductive switching transients.
Q_G(tot)	70.8 nC - Total gate charge determines driver strength requirement; enables efficient 100 kHz–500 kHz switching with moderate gate resistor values.
R_th(j-mb)	0.38 K/W typical - Low junction-to-mounting-base thermal resistance allows direct heatsinking via PCB copper, reducing need for external heatsinks.
V_GS(th)	2–4 V @ T_j = 25 °C - Gate threshold ensures clean turn-on with standard 5 V or 10 V logic drivers without requiring level-shifting.

Pinout & Package

D2PAK (SOT404) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) is electrically connected to drain and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts standard-level 10 V drive; 0.79 Ω internal gate resistance limits ringing and simplifies driver design.
2 (D)	Drain	Main high-side power terminal; internally bonded to mounting base for low-inductance, low-thermal-resistance connection to heatsink or PCB copper pour.
3 (S)	Source	Power return path and reference for gate drive; isolated from mounting base to enable low-side or high-side configuration with appropriate level shifting.

Key Features

Feature	Design Value
High-current capability	100 A continuous at T_mb = 25 °C enables single-device replacement of paralleled TO-220 MOSFETs in compact server power modules.
Low R_DS(on) over temperature	8.6 mΩ max @ T_j = 175 °C ensures predictable conduction loss in thermally constrained environments like sealed telecom enclosures.
Standard-level gate drive	Operates fully enhanced with 10 V gate voltage - eliminates need for dedicated gate driver ICs in cost-sensitive industrial motor drives.
Avalanche-rated structure	266 mJ unclamped avalanche energy provides margin against inductive kickback in relay driving and solenoid control without external snubbers.
Thermally robust packaging	D2PAK mounting base directly ties drain to PCB copper, achieving 0.38 K/W R_th(j-mb) - reduces thermal bottleneck versus SO-8 or DPAK alternatives.

Applications

DC-DC Converters

Server Power Supplies

Use Scenario: Primary-side switch in 48 V input, 12 V output LLC resonant converter for AI accelerator racks.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300 kHz with ZVS, handling peak currents >80 A.

Use Value: 4.4 mΩ R_DS(on) minimizes conduction loss under full load; 266 mJ avalanche rating absorbs leakage inductance spikes during zero-voltage switching transitions.

Use Scenario: 12 V intermediate bus converter delivering 200 A to CPU VRMs in hyperscale data center servers.

IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter with 500 kHz PWM frequency and tight thermal envelope.

Use Value: 0.38 K/W R_th(j-mb) enables direct mounting to 4 oz copper plane, sustaining 100 A continuous without forced air cooling.

Motor Control

Load Switching

Use Scenario: Half-bridge leg in 24 V BLDC motor driver for industrial automation conveyors.

IC Role / Device Role / Timing Role: High-current switching element controlling phase current up to 75 A RMS with 20 kHz PWM modulation.

Use Value: 175 °C T_j rating ensures reliability in enclosed cabinets; 45 ns t_rr of body diode supports efficient freewheeling without external Schottky.

Use Scenario: Hot-swap and inrush current limiting in 48 V telecom distribution boards.

IC Role / Device Role / Timing Role: Main power FET in active OR-ing and load switch circuit protecting downstream equipment during insertion.

Use Value: 60 V V_DS withstands 48 V nominal bus plus 20 % transient; 100 A I_D supports 50 A steady-state + surge tolerance per channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4110PBF	60 V, 3.2 mΩ @ 10 V, TO-220 package, 175 °C rated; higher R_DS(on) tempco and no avalanche rating specified.	Requires mechanical heatsink; lacks documented E_AS margin for inductive loads.	Prefer when board space permits TO-220 and avalanche robustness is not critical.
STL130N6F7	60 V, 3.8 mΩ @ 10 V, PowerFLAT 5x6 package; lower thermal resistance to ambient but no mounting base connection.	Relies on PCB copper for thermal management; unsuitable for high-power density designs needing direct heatsink attachment.	Choose when ultra-low profile and automated assembly are priorities over maximum power density.

Compared with IRFB4110PBF and STL130N6F7, PSMN4R6-60BS uniquely combines D2PAK's direct-mount thermal path, guaranteed 266 mJ avalanche energy, and 4.4 mΩ R_DS(on) in a production-qualified industrial-grade package-making it optimal for thermally demanding, high-reliability power conversion where both conduction efficiency and transient ruggedness are non-negotiable.

Availability

PSMN4R6-60BS is available at Aetrix Electronics and suitable for server power supplies, industrial motor control, and DC-DC converter designs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for high-volume manufacturing.

Supply support for PSMN4R6-60BS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

This device belongs to Nexperia's standard-level power MOSFET product line, engineered for cost-effective, thermally robust switching in industrial, computing, and communications infrastructure where 175 °C operation and avalanche ruggedness are essential.

FAQ

What gate drive voltage is required for full enhancement?

PSMN4R6-60BS achieves full enhancement at V_GS = 10 V, delivering its specified 4.4 mΩ R_DS(on) at 25 °C. It remains functional down to 4.5 V (R_DS(on) ≈ 12 mΩ), but 10 V is recommended for minimal conduction loss and consistent timing in high-current applications such as server PSUs.

Is the mounting base electrically isolated from other terminals?

No-the mounting base (mb) is internally connected to the drain terminal (Pin 2), as confirmed in the pinning diagram and package outline. This design enables low-inductance, low-thermal-resistance heat transfer but requires electrical isolation of the heatsink or PCB copper area from other circuit potentials.

Can this MOSFET be used in avalanche mode repeatedly?

No-its 266 mJ E_AS rating applies only to non-repetitive, unclamped avalanche events. The datasheet explicitly defines this as a single-pulse stress condition. Repeated avalanche operation is not characterized or guaranteed and may cause cumulative degradation or failure.

How does R_DS(on) change with junction temperature?

R_DS(on) increases linearly with temperature: 3.74 mΩ at 25 °C, 5.98 mΩ at 100 °C, and 8.6 mΩ max at 175 °C. This positive tempco is inherent to silicon MOSFETs and must be accounted for in worst-case thermal design-especially in sealed enclosures where ambient rise impacts junction temperature significantly.

PSMN4R6-60BS,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 70.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4426 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 211W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PSMN4R6-60BS,118 FAQ

1.How can I place an order for PSMN4R6-60BS,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN4R6-60BS,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN4R6-60BS,118 reliable?

The price and inventory of PSMN4R6-60BS,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN4R6-60BS,118 is usually 5 days.

3.What payment methods are accepted for PSMN4R6-60BS,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN4R6-60BS,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN4R6-60BS,118?

PSMN4R6-60BS,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN4R6-60BS,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN4R6-60BS,118?

For technical support, including PSMN4R6-60BS,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN4R6-60BS,118 requirements.

6.How does Aetrix verify that PSMN4R6-60BS,118 is sourced from the original manufacturer or authorized distributors?

All PSMN4R6-60BS,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN4R6-60BS,118 meets industry standards.

7.What is the process for return or replacement of PSMN4R6-60BS,118?

All PSMN4R6-60BS,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN4R6-60BS,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN4R6-60BS,118 part is unused and in its original packaging.

Return procedure for PSMN4R6-60BS,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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