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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN4R8-100PSEQ

Name: PSMN4R8-100PSEQ
Brand: Nexperia USA Inc.
SKU: PSMN4R8-100PSEQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN4R8-100PSEQ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN4R8-100PSEQ.pdf

Description:: MOSFET N-CH 100V 120A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN4R8-100PSE from Nexperia is a standard-level N-channel MOSFET in TO-220AB package, rated for 100 V drain-source voltage, 5 mΩ R_DS(on) at V_GS = 10 V and I_D = 25 A (T_j = 25 °C), with enhanced safe operating area (SOA) for linear-mode robustness and 693 A pulsed drain current capability. It serves as a high-current switching element in 48 V telecom backplane power stages, hot-swap controllers, and electronic fuse circuits.

For engineers reviewing the PSMN4R8-100PSE datasheet, PSMN4R8-100PSE pinout, PSMN4R8-100PSE application, or PSMN4R8-100PSE equivalent, key selection criteria include SOA performance under unclamped inductive switching, thermal resistance to mounting base (0.3 K/W typ), avalanche energy rating (542 mJ), and gate charge profile (196 nC typ total) for optimized driver design and loss trade-offs.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve both low R_DS(on) and extended linear-mode SOA-enabling reliable operation during high-energy turn-on/off transients in fault-tolerant power systems. Its gate threshold voltage (2–4 V typ) and plateau voltage (~4.3 V) support standard 10 V gate drive while maintaining noise immunity.

The device features an integrated source-drain diode with 72 ns reverse recovery time and 227 nC recovered charge, enabling moderate-frequency synchronous rectification or freewheeling in motor control and UPS topologies. Thermal design is anchored by direct-mounting capability via the drain-connected mounting base (R_th(j-mb) = 0.3 K/W typ).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V maximum - supports 48 V telecom rails with ≥2× voltage margin against transients and ringing.
R_DS(on)	4.3–5 mΩ at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - enables <1.25 W conduction loss at 50 A DC, critical for thermal management in compact heatsink designs.
I_DM	693 A peak pulsed - sustains high inrush currents during hot-swap insertion without latch-up or second breakdown.
E_AS	542 mJ non-repetitive avalanche energy - provides single-pulse fault tolerance in unclamped inductive switching (e.g., relay drivers, solenoid controls).
Q_G(tot)	196–278 nC - determines gate driver power requirement and switching speed; compatible with common 1–2 A peak gate drivers.
R_th(j-mb)	0.3–0.37 K/W - enables >400 W power dissipation with ≤120 °C junction rise over heatsink, supporting high-power density layouts.
V_GS(th)	2–4 V - ensures clean turn-on with standard logic-level gate drivers while avoiding spurious activation from noise.

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink mounting base; 3 leads; drain connected to mounting base for low-inductance thermal and electrical path.

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control terminal; requires ≥10 V for full enhancement; gate resistance 0.43–1.7 Ω affects switching speed and ringing.
2	D (Drain)	Main high-side current path; electrically and thermally tied to mounting base-must be isolated from PCB ground unless system topology permits.
3	S (Source)	Reference node for gate drive and current sensing; low-inductance layout essential to minimize shoot-through risk in half-bridge configurations.
mb	Mounting Base	Drain-connected metal tab; primary thermal interface-requires thermal compound and mechanical clamping for optimal R_th(j-mb).

Key Features

Feature	Design Value
Enhanced SOA	Extended linear-mode safe operating area enables reliable operation under high V_DS/I_D overlap conditions (e.g., soft-start, overload limiting) without thermal runaway.
Low R_DS(on)	4.3 mΩ typical reduces conduction losses by >30% vs. legacy 100 V MOSFETs, directly improving efficiency in 48 V telecom PSUs and UPS inverters.
Avalanche ruggedness	542 mJ single-pulse E_AS allows use in non-clamped inductive loads (e.g., motor phase legs, solenoid drivers) without external snubbers.
Drain-connected mounting base	Direct thermal path from junction to heatsink yields 0.3 K/W R_th(j-mb), enabling >400 W continuous dissipation with modest heatsinking.
Fast body diode	72 ns t_rr and 227 nC Q_r reduce switching losses and EMI in freewheeling applications like motor control and DC-DC synchronous rectification.

Applications

Electronic Fuse

Hot-swap / Soft-start

Use Scenario: High-availability 48 V telecom shelf with redundant power modules requiring automatic current-limiting during board insertion or short-circuit events.

IC Role / Device Role / Timing Role: Main pass transistor in active current-limit circuit, operating in linear mode during fault conditions to clamp current at safe levels.

Use Value: Enhanced SOA prevents thermal runaway during sustained 50–100 A fault currents, eliminating need for external current-sense amplifiers or complex protection ICs.

Use Scenario: Server backplane with hot-pluggable line cards where inrush current must be ramped over 10–100 ms to avoid supply rail collapse.

IC Role / Device Role / Timing Role: Controlled turn-on switch in series with input power rail; gate driven by RC-delayed or op-amp-based soft-start controller.

Use Value: 693 A pulsed current rating accommodates worst-case inrush into large bulk capacitance, while low R_DS(on) minimizes steady-state voltage drop (<250 mV @ 50 A).

Uninterruptible Power Supplies

Motor Control

Use Scenario: Online double-conversion UPS with bidirectional DC-link switching, requiring robustness against battery reversal, load dumps, and grid transients.

IC Role / Device Role / Timing Role: High-side switch in DC-AC inverter stage or battery isolation circuit; subjected to repetitive unclamped inductive switching.

Use Value: 542 mJ avalanche energy rating enables survival of multiple line-to-line faults without derating, reducing need for external TVS or clamping diodes.

Use Scenario: Brushless DC motor drive for industrial automation, where phase-leg high-side switches endure commutation-induced voltage spikes and reverse recovery stress.

IC Role / Device Role / Timing Role: Upper switch in three-phase inverter leg; body diode conducts freewheeling current during low-side conduction.

Use Value: 72 ns reverse recovery time and low Q_r minimize switching losses and voltage overshoot during commutation, improving efficiency and EMI performance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-SOA MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V, 5.2 mΩ R_DS(on), 110 A I_D, D²PAK package, lower SOA rating (no published E_AS spec)	Limited to lower-energy linear operation; unsuitable for sustained hot-swap or electronic fuse duty cycles	Select when footprint constraints favor surface-mount and avalanche robustness is secondary to cost.
IRFP4110PBF	100 V, 4.5 mΩ R_DS(on), 110 A I_D, TO-247 package, higher Q_G (320 nC), no SOA graph in datasheet	Higher gate drive power required; lacks documented SOA validation for telecom-grade reliability	Prefer only when higher continuous current rating justifies larger TO-247 footprint and thermal interface complexity.

Compared with STP110N10F7 and IRFP4110PBF, PSMN4R8-100PSE uniquely combines verified SOA performance, low R_DS(on), and TO-220AB's proven thermal interface-making it the only option qualified for telecom-grade hot-swap and electronic fuse applications demanding simultaneous high current, high voltage, and linear-mode resilience.

Availability

PSMN4R8-100PSE is available at Aetrix Electronics and suitable for telecom power distribution, industrial UPS systems, and motor drive inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production programs.

Supply support for PSMN4R8-100PSE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, diodes, and ESD protection.

This device belongs to Nexperia's "NextPower Live" portfolio-designed specifically for high-efficiency, high-reliability power conversion in telecom infrastructure, server power supplies, and industrial motor drives where SOA and avalanche ruggedness are mission-critical.

FAQ

What is the maximum continuous drain current for PSMN4R8-100PSE at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is capped at 120 A due to package thermal limits-not silicon capability-as confirmed in Figure 2 of the datasheet. This rating assumes proper heatsinking and ambient airflow; exceeding it risks thermal runaway even if R_DS(on) remains low.

Does PSMN4R8-100PSE have a gate diode or integrated gate protection?

No. The device has no integrated gate protection diode or Zener clamp. Gate-source voltage must be limited to ±20 V per Absolute Maximum Ratings (Table 5); external 12–15 V Zener clamping is recommended for robust gate drive in noisy environments.

Can PSMN4R8-100PSE be used in synchronous rectification applications?

Yes-the source-drain diode has 72 ns reverse recovery time and 227 nC recovered charge, enabling efficient synchronous rectification up to ~100 kHz in LLC or phase-shifted full-bridge topologies. However, its V_SD (0.79–1.2 V) is higher than Schottky alternatives, so conduction loss trade-offs must be evaluated.

Is the mounting base electrically isolated from the drain in PSMN4R8-100PSE?

No. The mounting base (mb) is internally connected to the drain terminal, as explicitly stated in Table 2 (Pinning information) and Figure 18 (Package outline). Electrical isolation requires insulating hardware (e.g., shoulder washers, silicone pads) between the tab and heatsink.

PSMN4R8-100PSEQ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 278 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14400 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 405W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN4R8-100PSEQ FAQ

1.How can I place an order for PSMN4R8-100PSEQ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN4R8-100PSEQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN4R8-100PSEQ reliable?

The price and inventory of PSMN4R8-100PSEQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN4R8-100PSEQ is usually 5 days.

3.What payment methods are accepted for PSMN4R8-100PSEQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN4R8-100PSEQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN4R8-100PSEQ?

PSMN4R8-100PSEQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN4R8-100PSEQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN4R8-100PSEQ?

For technical support, including PSMN4R8-100PSEQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN4R8-100PSEQ requirements.

6.How does Aetrix verify that PSMN4R8-100PSEQ is sourced from the original manufacturer or authorized distributors?

All PSMN4R8-100PSEQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN4R8-100PSEQ meets industry standards.

7.What is the process for return or replacement of PSMN4R8-100PSEQ?

All PSMN4R8-100PSEQ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN4R8-100PSEQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN4R8-100PSEQ part is unused and in its original packaging.

Return procedure for PSMN4R8-100PSEQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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