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Nexperia USA Inc. PSMN5R0-100ES,127

Name: PSMN5R0-100ES,127
Brand: Nexperia USA Inc.
SKU: PSMN5R0-100ES,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN5R0-100ES,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: PSMN5R0-100ES,127.pdf

Description:: MOSFET N-CH 100V 120A I2PAK

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Product details

Overview

PSMN5R0-100ES from Nexperia is a standard-level N-channel MOSFET in I2PAK (SOT226) package, rated for 100 V V_DS, 4.3–5 mΩ R_DS(on) at T_j = 25 °C and 25 A, 120 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-current power switch in industrial DC-DC converters, server power supplies, and motor control circuits where low conduction loss and robust avalanche energy handling are required.

For engineers reviewing the PSMN5R0-100ES datasheet, PSMN5R0-100ES pinout, PSMN5R0-100ES application, or PSMN5R0-100ES equivalent, this page delivers verified electrical parameters, thermal resistance (R_th(j-mb) = 0.22–0.44 K/W), gate charge (Q_G(tot) = 170 nC), avalanche ruggedness (E_DS(AL)S = 537 mJ), and real-world use context for high-reliability power switching design.

Technical Context

This MOSFET employs a planar silicon process optimized for standard-level gate drive compatibility (V_GS = 10 V), delivering low R_DS(on) without requiring logic-level or enhanced gate drive circuitry. Its I2PAK package integrates a thermally efficient mounting base directly connected to the drain, enabling direct heatsink attachment and minimizing thermal resistance from junction to mounting base.

The device exhibits stable threshold voltage (V_GS(th) = 2–4 V at 25 °C, 1–4.6 V across –55 to 175 °C) and controlled dynamic characteristics: Q_GD = 49 nC, C_iss = 9900 pF, and fast switching with t_d(on) = 45 ns and t_f = 63 ns under defined test conditions - supporting high-frequency operation in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for use in 48 V and 60 V bus systems with margin.
R_DS(on)	4.3–5 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 25 A, critical for high-efficiency power stages.
I_D (cont)	120 A @ T_mb = 25 °C - High current capability supports single-device solutions in high-power load switching and server VRMs.
Q_G(tot)	170 nC - Defines gate drive power requirement; compatible with standard gate drivers (e.g., UCC27531, TC4420) without excessive dissipation.
E_DS(AL)S	537 mJ (unclamped, V_sup ≤100 V) - Confirmed avalanche energy rating enables reliable operation during inductive turn-off transients.
R_th(j-mb)	0.22–0.44 K/W - Low thermal resistance allows >300 W power dissipation with moderate heatsinking, validated via Figure 2.
V_GS(th)	2–4 V @ T_j = 25 °C - Ensures clean turn-on with standard 5 V or 10 V logic-level gate sources without risk of partial enhancement.

Pinout & Package

I2PAK (SOT226) package with isolated mounting base (mb) electrically connected to drain; designed for surface-mount assembly with through-hole mechanical anchoring and direct thermal interface to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; requires 10 V drive for full enhancement; gate resistance R_G = 0.9 Ω limits ringing and EMI.
2	Drain (D)	Main high-side current path; internally bonded to mounting base (mb) for low-inductance, low-thermal-resistance heat transfer.
3	Source (S)	Reference node for gate drive and current sensing; forms return path for load current and body diode conduction.
mb	Mounting Base	Electrically tied to drain; provides primary thermal path to heatsink; must be insulated from PCB ground unless drain is at system ground potential.

Key Features

Feature	Design Value
High-current capability	120 A continuous at T_mb = 25 °C - eliminates parallel MOSFETs in mid-power server and telecom SMPS designs.
Low R_DS(on) at elevated temperature	12–14 mΩ @ T_j = 175 °C - maintains efficiency under worst-case thermal conditions in sealed enclosures.
Standard-level gate drive	V_GS(th) = 2–4 V and R_DS(on) fully specified at V_GS = 10 V - avoids need for level shifters or specialized gate drivers.
Avalanche-rated operation	E_DS(AL)S = 537 mJ - enables robustness in flyback, LLC, and motor phase-leg configurations with unclamped inductive loads.
Thermally optimized package	R_th(j-mb) = 0.22 K/W min - supports >300 W dissipation with compact heatsinks, reducing system footprint vs. TO-220 alternatives.

Applications

DC-to-DC Converters

Server Power Supplies

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward or half-bridge converter for data center rack PSUs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 100–300 kHz with 10 V gate drive and forced-air cooling.

Use Value: 4.3 mΩ R_DS(on) reduces conduction loss by >35% versus 8 mΩ alternatives at 60 A, improving full-load efficiency to >95%.

Use Scenario: Output stage switch in 12 V VRM for CPU/GPU power delivery in enterprise servers.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) power FET in multiphase buck converter with 10 V gate driver and direct heatsink mounting.

Use Value: 120 A rating and 0.22 K/W R_th(j-mb) allow single-device per phase up to 80 A, simplifying layout and reducing component count.

Motor Control

Load Switching

Use Scenario: Half-bridge leg in 24–48 V BLDC motor driver for industrial automation actuators.

IC Role / Device Role / Timing Role: High-side/low-side switching element handling 50 A peak phase current with PWM frequencies up to 20 kHz.

Use Value: 537 mJ avalanche energy rating prevents failure during regenerative braking transients without external snubbers.

Use Scenario: Hot-swap or battery protection switch in 48 V telecom power distribution units.

IC Role / Device Role / Timing Role: Single-pole, high-current load switch controlled by microcontroller GPIO with 10 V level-shifting.

Use Value: 100 V V_DS rating provides 2× margin over 48 V nominal bus, ensuring reliability during load-dump events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V, 110 A, R_DS(on) = 5.2 mΩ @ 10 V, TO-220FP package, R_th(j-a) = 45 K/W (no mounting base)	Limited to lower-power applications due to higher thermal resistance and no direct heatsink interface	Choose when board space constraints prohibit I2PAK and heatsink mounting is not feasible.
IRF1404ZPBF	40 V, 184 A, R_DS(on) = 3.8 mΩ @ 10 V, TO-220 package, not rated beyond 150 °C	Lower voltage rating and reduced high-temperature reliability limit use in 48 V+ systems	Use only in 12–24 V motor drives where 100 V margin is unnecessary and cost is prioritized over thermal performance.

Compared with STP110N10F7 and IRF1404ZPBF, PSMN5R0-100ES uniquely combines 100 V rating, 175 °C qualification, I2PAK thermal performance, and 4.3 mΩ R_DS(on), making it optimal for high-reliability, high-power industrial and server applications where thermal management and voltage margin are critical.

Availability

PSMN5R0-100ES is available at Aetrix Electronics and suitable for DC-to-DC converters, server power supplies, and motor control systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for PSMN5R0-100ES includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This part belongs to Nexperia's standard-level power MOSFET product line, engineered for high-current switching in industrial, communications, and computing power systems where thermal robustness and avalanche tolerance are essential.

FAQ

Is PSMN5R0-100ES suitable for 48 V battery-powered motor drives?

Yes. With 100 V V_DS, 120 A continuous current, and 537 mJ unclamped avalanche energy, it safely handles 48 V bus operation including load-dump transients and regenerative braking spikes. Its 175 °C rating ensures stability in enclosed motor controller enclosures without derating.

What is the recommended gate resistor value for hard-switched 200 kHz operation?

A 4.7 Ω series gate resistor is validated per datasheet Figure 14 for V_DS = 50 V, I_D = 75 A, yielding t_d(on) = 45 ns and t_f = 63 ns. This value balances switching speed against gate driver stress and EMI; values below 3.3 Ω increase dV/dt-induced shoot-through risk.

Can the mounting base (mb) be left electrically floating?

No. The mounting base is internally connected to the drain (Pin 2). Leaving it unconnected violates safe operating area limits and risks arcing or thermal runaway. It must be either bolted to a heatsink (with appropriate isolation if heatsink is grounded) or soldered to a large copper pour tied to drain potential.

How does R_DS(on) change from 25 °C to 175 °C junction temperature?

R_DS(on) increases from 4.3–5 mΩ at 25 °C to 12–14 mΩ at 175 °C (Table 6), a ~2.8× rise. This is confirmed by Figure 12 and must be accounted for in worst-case conduction loss calculations - e.g., 12 mΩ × (60 A)² = 43.2 W at full load and max temperature.

PSMN5R0-100ES,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9900 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 338W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

PSMN5R0-100ES,127 FAQ

1.How can I place an order for PSMN5R0-100ES,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN5R0-100ES,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of PSMN5R0-100ES,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN5R0-100ES,127 is usually 5 days.

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5.How can I obtain technical support or documentation for PSMN5R0-100ES,127?

For technical support, including PSMN5R0-100ES,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN5R0-100ES,127 requirements.

6.How does Aetrix verify that PSMN5R0-100ES,127 is sourced from the original manufacturer or authorized distributors?

All PSMN5R0-100ES,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN5R0-100ES,127 meets industry standards.

7.What is the process for return or replacement of PSMN5R0-100ES,127?

All PSMN5R0-100ES,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN5R0-100ES,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN5R0-100ES,127 part is unused and in its original packaging.

Return procedure for PSMN5R0-100ES,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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