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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN5R0-30YL,115

Name: PSMN5R0-30YL,115
Brand: Nexperia USA Inc.
SKU: PSMN5R0-30YL,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN5R0-30YL,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN5R0-30YL,115.pdf

Description:: MOSFET N-CH 30V 91A LFPAK56

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Product details

Overview

PSMN5R0-30YL from Nexperia is a logic-level N-channel enhancement-mode MOSFET using TrenchMOS technology in LFPAK (SOT669) package, rated for 30 V V_DS, 5 mΩ R_DS(on) at V_GS = 10 V and 15 A, with 91 A continuous drain current at T_mb = 25 °C and 61 W power dissipation - deployed in industrial DC-DC converters and Class-D audio amplifiers.

For engineers reviewing the PSMN5R0-30YL datasheet, PSMN5R0-30YL pinout, PSMN5R0-30YL application, or PSMN5R0-30YL equivalent, this device supports logic-level gate drive (V_GS(th) = 1.3–2.15 V), delivers low conduction loss in high-current switching paths, and features avalanche ruggedness (32 mJ unclamped E_DS(AL)S) for robust operation in motor control and server power supplies.

Technical Context

This MOSFET employs TrenchMOS architecture to achieve low R_DS(on) and optimized gate charge (Q_G(tot) = 14.1 nC at V_GS = 4.5 V), enabling fast switching with minimal drive requirements. Its thermal resistance R_th(j-mb) = 1.39–2 K/W enables efficient heat transfer to the mounting base.

The integrated source-drain diode exhibits V_SD = 0.84–1.2 V at I_S = 25 A and T_j = 25 °C, with t_rr = 30 ns and Q_r = 21 nC - supporting synchronous rectification and freewheeling in buck and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - defines safe blocking capability in 24 V industrial bus and 12 V server rail applications.
R_DS(on)	3.63–5 mΩ at V_GS = 10 V, I_D = 15 A, T_j = 25 °C - enables <100 mW conduction loss at 20 A, critical for high-efficiency DC-DC stages.
I_D (continuous)	91 A at T_mb = 25 °C - supports high-current output stages in Class-D amplifiers and motor drivers without forced cooling.
Q_G(tot)	14.1 nC at V_GS = 4.5 V - allows direct drive from 3.3 V/5 V microcontrollers without gate driver buffering.
E_DS(AL)S	32 mJ unclamped avalanche energy - sustains single-pulse inductive kickback in relay driving and H-bridge commutation.
R_th(j-mb)	1.39–2 K/W - enables >50 W dissipation with ≤100 °C junction-to-mounting-base temperature rise under PCB copper pad heatsinking.
V_GS(th)	1.3–2.15 V at I_D = 1 mA - ensures full enhancement with standard logic-level outputs, eliminating level-shifting circuitry.

Pinout & Package

Package: LFPAK (SOT669), plastic single-ended surface-mounted package with exposed mounting base connected to drain - optimized for low-inductance, high-current PCB layout and thermal performance via soldered copper pad.

Pin/Terminal	Circuit Role	Design Meaning
1	Source	Primary current return path; three parallel pins (1,2,3) reduce source inductance and resistance for high di/dt stability.
2	Source	Redundant source connection to minimize loop inductance in switching nodes and improve EMI behavior.
3	Source	Third source terminal - enables symmetric PCB routing and balanced current sharing across multiple source paths.
4	Gate	Control input; low gate capacitance (C_iss = 1760 pF) and Q_GD = 3.8 nC support clean turn-on/turn-off with minimal Miller effect.
Mounting base	Drain	Exposed metal pad electrically connected to drain - serves as primary thermal path and high-current drain node; requires solder mask-defined thermal pad.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	V_GS(th) range (1.3–2.15 V) ensures full enhancement from 3.3 V and 5 V controllers without external level shifters.
Low R_DS(on) × Q_G figure of merit	5 mΩ × 14.1 nC = 70.5 mΩ·nC - balances conduction and switching losses for high-frequency (<1 MHz) SMPS operation.
Integrated avalanche ruggedness	32 mJ unclamped E_DS(AL)S - eliminates need for external snubbers in inductive load switching like solenoid and BLDC phase control.
Thermally enhanced LFPAK package	R_th(j-mb) ≤ 2 K/W - delivers >2× the power density of comparable SO-8 MOSFETs under identical PCB copper area.
Three-source-pin configuration	Pins 1–3 all tied to source - reduces source inductance by ~50% vs. single-source packages, improving gate control stability during hard switching.

Applications

Class-D Audio Amplifier

Server DC-DC Converter

Use Scenario: High-efficiency, low-EMI output stage in 100–500 W audio amplifiers driving 4 Ω or 8 Ω loads.

IC Role / Device Role / Timing Role: Power switch in half-bridge topology operating at 300–500 kHz PWM frequency with synchronous rectification.

Use Value: Low Q_GD (3.8 nC) and R_DS(on) (5 mΩ) minimize switching loss and thermal stress, enabling compact heatsink-free designs.

Use Scenario: Primary-side high-side switch in 48 V to 12 V or 5 V isolated or non-isolated buck-derived server power modules.

IC Role / Device Role / Timing Role: Main switching element in multiphase VRM or single-phase point-of-load converter with 300–1000 kHz switching.

Use Value: 91 A I_D rating and 61 W P_tot allow high-current delivery in space-constrained 1U server boards with minimal thermal derating.

Industrial Motor Control

DC Power Distribution Switch

Use Scenario: Half-bridge leg in 24 V brushed DC or 3-phase BLDC motor drivers for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side or high-side switch handling peak currents up to 336 A (pulsed) during startup and stall conditions.

Use Value: Avalanche energy rating (32 mJ) withstands back-EMF transients without clamping diodes, reducing BOM count and board area.

Use Scenario: Hot-swap and inrush current limiting switch in 24 V/48 V industrial PLC backplanes and I/O modules.

IC Role / Device Role / Timing Role: Load switch controlling power delivery to downstream subsystems with controlled turn-on slew rate.

Use Value: Logic-level gate threshold enables direct MCU GPIO control; low R_DS(on) minimizes voltage drop (<100 mV at 20 A) during steady-state operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN2R8-30YL,115	Lower R_DS(on) (2.8 mΩ typ), higher Q_G(tot) (17.2 nC), same V_DS and package	Better conduction loss but slower switching; suited for <300 kHz applications prioritizing efficiency over speed	Select when thermal budget is tighter than switching loss budget - e.g., high-duty-cycle DC-DC converters.
IRLML6344TRPBF	SO-8 package, higher R_DS(on) (4.5 mΩ min), lower I_D (4.3 A), no avalanche rating	Limited current handling and no avalanche ruggedness - unsuitable for motor or inductive loads	Only consider for low-power logic-level switching where footprint and cost outweigh reliability and current needs.

Compared with PSMN5R0-30YL, PSMN2R8-30YL trades higher gate charge for lower conduction loss in thermally constrained systems, while IRLML6344TRPBF lacks both current capacity and avalanche robustness - making it inappropriate for industrial motor or power supply use cases requiring sustained high-current or inductive switching.

Availability

PSMN5R0-30YL is available at Aetrix Electronics and suitable for Class-D amplifiers, server power supplies, industrial motor control, and DC power distribution systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN5R0-30YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, diodes, and ESD protection components for industrial and communications markets.

The PSMN5R0-30YL belongs to Nexperia's logic-level TrenchMOS portfolio, engineered for high-current, high-efficiency switching in industrial power conversion and audio applications where gate drive simplicity and thermal performance are critical.

FAQ

What is the maximum continuous drain current for PSMN5R0-30YL at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is 64 A (per Table 4 Limiting Values). This derating reflects thermal constraints of the LFPAK package and PCB copper area - not device failure, but safe operation within its R_th(j-mb) limit and SOA boundaries.

Does PSMN5R0-30YL have an integrated body diode, and what are its key parameters?

Yes - it features a source-drain diode with forward voltage V_SD = 0.84–1.2 V at I_S = 25 A and T_j = 25 °C, reverse recovery time t_rr = 30 ns, and recovered charge Q_r = 21 nC. These values enable use in synchronous rectification and freewheeling paths without external diodes in many designs.

Can PSMN5R0-30YL be driven directly from a 3.3 V microcontroller GPIO?

Yes - its V_GS(th) range (1.3–2.15 V) and guaranteed R_DS(on) at V_GS = 4.5 V confirm reliable enhancement at 3.3 V. However, full 5 mΩ performance requires ≥4.5 V; at 3.3 V, R_DS(on) rises to ~8–10 mΩ, increasing conduction loss proportionally.

Is the mounting base electrically isolated, and how should it be connected on the PCB?

No - the mounting base is internally connected to the drain terminal. It must be routed to the drain net and soldered to a dedicated copper pour for thermal and electrical integrity. Isolation is not possible; any attempt to float or ground the base violates the internal connection and risks device failure.

PSMN5R0-30YL,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 91A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1760 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 61W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN5R0-30YL,115 FAQ

1.How can I place an order for PSMN5R0-30YL,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN5R0-30YL,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN5R0-30YL,115 reliable?

The price and inventory of PSMN5R0-30YL,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN5R0-30YL,115 is usually 5 days.

3.What payment methods are accepted for PSMN5R0-30YL,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN5R0-30YL,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN5R0-30YL,115?

PSMN5R0-30YL,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN5R0-30YL,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN5R0-30YL,115?

For technical support, including PSMN5R0-30YL,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN5R0-30YL,115 requirements.

6.How does Aetrix verify that PSMN5R0-30YL,115 is sourced from the original manufacturer or authorized distributors?

All PSMN5R0-30YL,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN5R0-30YL,115 meets industry standards.

7.What is the process for return or replacement of PSMN5R0-30YL,115?

All PSMN5R0-30YL,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN5R0-30YL,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN5R0-30YL,115 part is unused and in its original packaging.

Return procedure for PSMN5R0-30YL,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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