Nexperia USA Inc. PSMN5R0-40MLHX

Overview

PSMN5R0-40MLHX from Nexperia is a logic-level N-channel enhancement-mode MOSFET in LFPAK33 (SOT1210) package, rated 40 V V_DS, 5 mΩ R_DS(on) @ V_GS = 10 V / T_j = 25 °C, and 85 A continuous drain current at T_mb = 25 °C. It uses NextPower-S3 TrenchMOS Superjunction technology for high-efficiency synchronous rectification in DC-DC converters.

For engineers reviewing the PSMN5R0-40MLHX datasheet, PSMN5R0-40MLHX pinout, PSMN5R0-40MLHX application, or PSMN5R0-40MLHX equivalent, key selection criteria include its 1.77 V gate threshold, 2.9 nC Q_GD, 1.61 K/W R_th(j-mb), soft-recovery body diode, and 175 °C junction rating - critical for thermally constrained, high-frequency power stages.

Technical Context

This MOSFET employs TrenchMOS Superjunction architecture with clip-bonded die and solder die attach - eliminating wire bonds and glue to achieve robust 175 °C operation and low parasitic inductance. Its gate charge profile (Q_G(tot) = 13 nC @ V_GS = 4.5 V) and low Q_RR enable fast, low-loss switching in hard- and resonant-mode topologies.

The integrated source-drain diode delivers 24 ns t_rr and 18 nC Q_r, supporting efficient synchronous rectification without external Schottky replacement. Mounting base (drain-connected) thermal path enables direct PCB copper heatsinking with 1.61 K/W typical junction-to-mounting-base resistance.

Key Specifications

Pinout & Package

LFPAK33 (SOT1210) is a leadless, surface-mount package with exposed mounting base (drain-connected), three source terminals, and one gate terminal. Its clip-bonded construction eliminates wire bonds and adhesive, enabling 175 °C operation and high reliability in automotive and industrial power stages.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V logic-level MOSFET applications.

Compared with IPP040N04L and SI7157DP, PSMN5R0-40MLHX delivers superior high-frequency efficiency via lower Q_GD and R_th(j-mb), while its 100% avalanche test and 175 °C rating support mission-critical industrial and automotive-adjacent use cases where thermal margin and transient immunity are non-negotiable.

Availability

PSMN5R0-40MLHX is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, brushless DC motor drives, and high-brightness LED lighting systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN5R0-40MLHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and analog portfolio.

This device belongs to Nexperia's NextPower-S3 family - engineered specifically for high-switching-frequency power conversion where low Q_GD, soft diode recovery, and 175 °C thermal capability are essential.

FAQ

What is the maximum continuous drain current for PSMN5R0-40MLHX at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 62 A per Figure 2 of the datasheet. This value reflects actual thermal limits under real PCB mounting conditions - not theoretical silicon capability - and assumes adequate copper area and airflow per the recommended footprint in Figure 5.

Does PSMN5R0-40MLHX require a gate resistor for stability in high-frequency switching?

Yes - a 2.2 Ω to 5.6 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with the device's 0.8 Ω typical gate resistance and low Crss. The 24 ns t_rr and soft recovery reduce sensitivity, but gate resistance remains critical for EMI control above 500 kHz.

Can PSMN5R0-40MLHX be used in avalanche mode intentionally?

No - although 100% avalanche-tested to 82.7 mJ, it is not designed for repetitive avalanche operation. The datasheet specifies this as a ruggedness qualification metric only. Intentional avalanche use will accelerate wear-out and is unsupported for production designs.

How does the LFPAK33 package compare thermally to traditional SO-8 or DPAK packages?

LFPAK33 achieves 1.61 K/W R_th(j-mb), ~3× better than SO-8 (≈5 K/W) and ~2× better than DPAK (≈3.2 K/W), due to direct copper mounting base contact and elimination of epoxy and wire bonds. This translates to ~25 °C lower junction temperature at identical power dissipation and PCB layout.