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Nexperia USA Inc. PSMN5R0-40MSHX
- Part No.:
- PSMN5R0-40MSHX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SOT-1210, 8-LFPAK33 (5-Lead)
- Datasheet:
-
PSMN5R0-40MSHX.pdf
- Description:
- MOSFET N-CH 40V 85A LFPAK33
- Quantity:
- Payment:
- Shipping:
Inventory:2,661
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Product details
Overview
PSMN5R0-40MSHX from Nexperia is a standard-level N-channel enhancement-mode MOSFET in LFPAK33 (SOT1210) package, rated 40 V VDS, 5 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, with 85 A continuous drain current capability at Tmb = 25 °C. It employs NextPower-S3 TrenchMOS Superjunction technology for high-efficiency synchronous rectification in DC-DC converters.
For engineers reviewing the PSMN5R0-40MSHX datasheet, PSMN5R0-40MSHX pinout, PSMN5R0-40MSHX application, or PSMN5R0-40MSHX equivalent, key selection criteria include its 1.61 K/W junction-to-mounting-base thermal resistance, 3 nC typical QGD, soft-recovery body diode, avalanche-rated ruggedness (82.7 mJ), and LFPAK33's exposed-drain mounting base for low-inductance power routing.
Technical Context
This MOSFET uses TrenchMOS Superjunction architecture optimized for high-frequency switching in secondary-side synchronous rectifiers and BLDC motor drives. Its gate charge profile features low QG(tot) (21 nC typ) and QGD (3 nC typ), enabling fast turn-on/turn-off with minimal voltage overshoot and EMI.
The device integrates a robust intrinsic body diode with 25 ns typical reverse recovery time (trr) and 18 nC recovered charge (Qr), delivering soft recovery behavior critical for ZVS/ZCS topologies. Thermal performance is anchored by clip-bonded die attach and solder-connected mounting base, supporting 175 °C continuous operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V–24 V input DC-DC and motor drive rails |
| RDS(on) | 3.9–5 mΩ @ VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 20 A, critical for high-current rectification |
| ID | 85 A @ Tmb = 25 °C - Validated continuous current under ideal board-level thermal conditions |
| QGD | 0.9–6 nC - Low gate-drain charge minimizes Miller-induced switching delay and dv/dt-induced false turn-on |
| Rth(j-mb) | 1.61–1.81 K/W - Enables direct thermal coupling to heatsink or copper plane, reducing junction temperature rise by >50% vs SO-8 |
| trr | 25 ns - Fast, soft reverse recovery limits voltage spikes and ringing during commutation in synchronous rectifiers |
| EAS | 127.6 mJ - Unclamped avalanche energy rating supports robust operation during transient overvoltage events |
Pinout & Package
LFPAK33 (SOT1210) is a leadless, clip-bonded surface-mount package with an exposed copper mounting base connected to the drain. It features no wire bonds or adhesive, enabling 175 °C operation, wave-solderable leads, and visual solder-joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 4 | Gate (G) | Single gate input with 0.8 Ω typical gate resistance - compatible with standard 5–10 Ω external gate drivers |
| Mounting Base (mb) | Drain (D) | Exposed copper pad electrically and thermally connected to drain - serves as primary current path and heatsink interface |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche rated, 100% tested | 82.7 mJ single-pulse EAS at Tj = 25 °C - eliminates need for external snubbers in flyback and LLC resonant converters |
| NextPower-S3 superfast switching | 6.5 ns td(on), 4.4 ns tf - enables >1 MHz operation while maintaining low switching losses |
| Soft body-diode recovery | 25 ns trr, 18 nC Qr - reduces voltage overshoot and EMI in synchronous rectifier stages without external Schottky diodes |
| Low parasitic inductance/resistance | 1.61 K/W Rth(j-mb), <0.5 nH source loop inductance - improves stability in high-speed gate drive and reduces ringing |
| 175 °C qualified clip-bonded construction | No wire bonds or epoxy - ensures long-term reliability in automotive under-hood and industrial motor control environments |
Applications
| Secondary Side Synchronous Rectification | High-Efficiency DC-DC Converters |
|---|---|
|
Use Scenario: Used on the secondary side of isolated DC-DC converters (e.g., forward, LLC, active clamp flyback) to replace Schottky diodes. IC Role / Device Role / Timing Role: Power switch operating in synchronous rectifier mode, driven by transformer-coupled or controller-generated gate signals. Use Value: Reduces conduction loss by >40% vs 40 V Schottky diodes, enabling >95% efficiency at 20–50 A output currents. |
Use Scenario: Primary or secondary-side switch in non-isolated buck, boost, or multiphase VRMs for server, telecom, and FPGA power supplies. IC Role / Device Role / Timing Role: High-current, high-frequency power FET in hard-switched or ZVS topologies with gate drive frequencies up to 2 MHz. Use Value: Low QG/QGD and RDS(on) minimize combined conduction and switching losses, improving thermal margin at 50+ A loads. |
| Brushless DC Motor Drive | LED Lighting Drivers |
|
Use Scenario: Low-side or high-side switch in 3-phase BLDC inverter stages for fans, pumps, and power tools. IC Role / Device Role / Timing Role: N-channel MOSFET in half-bridge configuration, switched at 10–50 kHz with PWM-controlled gate drive. Use Value: Avalanche ruggedness and 175 °C rating ensure reliable commutation under inductive load transients and ambient temperatures up to 105 °C. |
Use Scenario: Primary switch in constant-current LED drivers for street lighting and high-bay fixtures (36–48 V bus). IC Role / Device Role / Timing Role: High-duty-cycle, high-current switch in buck or buck-boost topology operating at 100–500 kHz. Use Value: Low RDS(on) and soft diode recovery suppress audible noise and EMI, meeting Class B CISPR-15 requirements without added filtering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP040N04L | 4.0 mΩ RDS(on), 100 A ID, TO-252 package, higher QG (32 nC) | Larger footprint, higher thermal resistance (Rth(j-a) ≈ 40 K/W), less suitable for ultra-thin PCBs | Prefer when board space allows larger package and higher peak current is required |
| Vishay SI7850DP | 4.5 mΩ RDS(on), 75 A ID, PowerPAK SO-8, 150 °C rating, QGD = 4.5 nC | Lower max junction temperature, wire-bonded construction, higher parasitic inductance than LFPAK33 | Choose when legacy SO-8 compatibility is mandatory and 175 °C operation is not required |
Compared with IPP040N04L and SI7850DP, PSMN5R0-40MSHX delivers superior thermal performance via its clip-bonded LFPAK33 mounting base, lower QGD for cleaner high-frequency switching, and full 175 °C qualification-making it optimal for space-constrained, high-reliability, high-frequency power stages.
Availability
PSMN5R0-40MSHX is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, high-efficiency DC-DC converters, and brushless DC motor drive applications requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for PSMN5R0-40MSHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors for power management, logic, and analog applications, serving automotive, industrial, and consumer markets with high-volume, high-reliability components.
This device belongs to Nexperia's NextPower-S3 family-engineered specifically for high-efficiency, high-frequency power conversion in compact form factors, emphasizing low switching loss, soft diode recovery, and 175 °C operational robustness.
FAQ
What is the maximum continuous drain current for PSMN5R0-40MSHX under real-world PCB conditions?
The datasheet specifies 85 A at Tmb = 25 °C with ideal thermal design. In practice, sustained current is limited by PCB copper area, thermal vias, and ambient temperature. With 25.4 mm × 25.4 mm 70 µm copper on FR4, derating to ~50–60 A at Tmb = 100 °C is typical. Peak pulsed current remains 349 A for <10 µs.
Can PSMN5R0-40MSHX be used in avalanche mode repeatedly?
No-its 82.7 mJ EAS rating applies only to single, unclamped inductive switching events. The device is 100% tested for single-pulse avalanche ruggedness but is not qualified for repetitive avalanche operation. System design must avoid repeated avalanche stress to ensure reliability.
How does the LFPAK33 package improve thermal performance versus SO-8?
LFPAK33 replaces wire bonds with clip bonding and uses a solder-connected mounting base directly tied to the drain. This yields Rth(j-mb) = 1.61 K/W-over 3× better than typical SO-8 (≈5–6 K/W)-and eliminates bond-wire failure mechanisms, enabling reliable 175 °C operation and higher power density.
Is the body diode suitable for freewheeling in high-frequency inverter applications?
Yes-the intrinsic body diode exhibits soft reverse recovery (trr = 25 ns, Qr = 18 nC) and low forward voltage (VSD = 0.82 V @ 20 A). This enables efficient freewheeling in BLDC and H-bridge inverters up to 50 kHz without external diodes or snubbers, reducing component count and EMI.
PSMN5R0-40MSHX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- SOT-1210, 8-LFPAK33 (5-Lead)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2010 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 83W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK33
PSMN5R0-40MSHX FAQ
1.How can I place an order for PSMN5R0-40MSHX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN5R0-40MSHX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN5R0-40MSHX reliable?
The price and inventory of PSMN5R0-40MSHX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN5R0-40MSHX is usually 5 days.
3.What payment methods are accepted for PSMN5R0-40MSHX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN5R0-40MSHX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN5R0-40MSHX?
PSMN5R0-40MSHX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN5R0-40MSHX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN5R0-40MSHX?
For technical support, including PSMN5R0-40MSHX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN5R0-40MSHX requirements.
6.How does Aetrix verify that PSMN5R0-40MSHX is sourced from the original manufacturer or authorized distributors?
All PSMN5R0-40MSHX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN5R0-40MSHX meets industry standards.
7.What is the process for return or replacement of PSMN5R0-40MSHX?
All PSMN5R0-40MSHX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN5R0-40MSHX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN5R0-40MSHX part is unused and in its original packaging.
Return procedure for PSMN5R0-40MSHX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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