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Nexperia USA Inc. PSMN5R0-80BS,118
- Part No.:
- PSMN5R0-80BS,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PSMN5R0-80BS,118.pdf
- Description:
- MOSFET N-CH 80V 100A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,257
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Product details
Overview
PSMN5R0-80BS,118 from Nexperia is a standard-level N-channel MOSFET in D2PAK (SOT404) package, rated for 80 V VDS, 5.1 mΩ RDS(on) at 25 °C, and 100 A continuous drain current at Tmb = 25 °C. It operates up to 175 °C junction temperature and delivers high efficiency in high-current load switching and motor control circuits.
For engineers reviewing the PSMN5R0-80BS,118 datasheet, PSMN5R0-80BS,118 pinout, PSMN5R0-80BS,118 application, or PSMN5R0-80BS,118 equivalent, key selection criteria include its 0.3 K/W junction-to-mounting-base thermal resistance, 101 nC total gate charge, 396 mJ unclamped avalanche energy, and compatibility with standard 10 V gate drive sources.
Technical Context
This MOSFET uses planar silicon technology optimized for low conduction loss and robust avalanche performance. Its RDS(on) remains ≤8.5 mΩ at 100 °C junction temperature, and it sustains 598 A peak drain current with 10 µs pulse width under Tmb = 25 °C conditions.
The device features an integrated source-drain diode with 0.8–1.2 V forward voltage at 25 A and 56 ns reverse recovery time. Gate threshold voltage ranges from 2–4 V at 25 °C and maintains ≥1 V even at 175 °C, enabling stable turn-on across industrial temperature extremes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum drain-source blocking voltage; supports 48 V and 60 V bus systems with margin. |
| RDS(on) | 5.1 mΩ @ VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1 W conduction loss at 20 A DC. |
| ID (cont) | 100 A @ Tmb = 25 °C - Requires thermally enhanced PCB layout with mounting base soldered to copper pour. |
| QG(tot) | 101 nC - Determines gate driver power requirement; ~1.01 mC per 10 kcycles at 10 V drive. |
| EAS | 396 mJ - Supports single-pulse unclamped inductive switching without failure in motor or relay snubber circuits. |
| Rth(j-mb) | 0.3 K/W typical - Enables >200 W power dissipation with 60 K rise from mounting base to junction. |
| VGS(th) | 2–4 V @ 25 °C - Ensures reliable enhancement-mode turn-on with standard logic-level or microcontroller GPIO drive. |
Pinout & Package
Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (lead 2 cropped); mounting base (mb) electrically connected to drain and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires 10 V for full enhancement; 0.95 Ω internal AC gate resistance affects switching speed. |
| 2 (D) | Drain | Not externally accessible - internally bonded to mounting base; primary high-side switching node and thermal interface. |
| 3 (S) | Source | Power return path and reference for gate drive; connects to PCB ground plane for low-inductance layout. |
| Mounting Base (mb) | Drain / Thermal Interface | Electrically tied to drain; must be soldered to ≥10 cm² 2 oz copper area for rated 270 W Ptot capability. |
Key Features
| Feature | Design Value |
|---|---|
| High-temperature operation | Rated for continuous operation up to 175 °C junction temperature - suitable for sealed industrial enclosures without forced air. |
| Low RDS(on) drift | RDS(on) increases only 2.4× from 25 °C to 175 °C - maintains predictable conduction loss in thermal transients. |
| Standard-level gate drive | Full enhancement at VGS = 10 V - eliminates need for gate boosters in 12 V or 15 V supply systems. |
| Avalanche ruggedness | 396 mJ non-repetitive EAS - withstands worst-case inductive turn-off without external snubber in DC-DC and motor phases. |
| Thermal performance | 0.3 K/W Rth(j-mb) - enables >2× higher power density than TO-220 equivalents with identical PCB area. |
Applications
| Server Power Supply | Industrial Motor Control |
|---|---|
Use Scenario: High-efficiency 48 V input, 12 V output synchronous buck converter in 1U rack server PSU. IC Role / Device Role / Timing Role: Primary high-side switch in multiphase VRM; handles 60–80 A per phase with 100–500 kHz PWM. Use Value: 5.1 mΩ RDS(on) reduces conduction loss by 35% vs. 8 mΩ alternatives, improving full-load efficiency by 0.8% at 200 W/phase. |
Use Scenario: Half-bridge leg in 3-phase BLDC driver for HVAC blowers and conveyor systems. IC Role / Device Role / Timing Role: Low-side switching element controlling motor phase current; commutated at ≤20 kHz with dead-time management. Use Value: 396 mJ EAS tolerates flyback energy during short-circuit events, eliminating need for external TVS on each leg. |
| DC-DC Converter | Load Switching |
Use Scenario: 24 V to 5 V step-down converter in telecom remote radio unit (RRU) power distribution. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous buck; conducts up to 40 A continuously. Use Value: 0.3 K/W Rth(j-mb) allows direct thermal coupling to heatsink via mounting base, reducing junction temp by 45 °C vs. SO-8 packages. |
Use Scenario: Hot-swap and inrush control for 48 V backplane power rails in industrial PLC chassis. IC Role / Device Role / Timing Role: Single-pole high-side load switch with soft-start; handles 100 A inrush and steady-state loads. Use Value: 100 A ID rating and 175 °C Tj support uninterrupted operation during ambient spikes to 85 °C in enclosed cabinets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N8F6 | 80 V, 5.4 mΩ, TO-220 package, Rth(j-c) = 0.9 K/W | Larger footprint, lower thermal efficiency, no integrated mounting base | Prefer when mechanical mounting constraints prohibit D2PAK or when legacy TO-220 heatsink tooling exists. |
| IRF1404ZPBF | 40 V, 4.7 mΩ, TO-220, 162 A ID, not 80 V rated | Lower voltage rating limits use to ≤24 V systems; unsuitable for 48 V bus applications | Select only for cost-sensitive 12–24 V DC-DC where 80 V blocking is unnecessary. |
Compared with STP110N8F6 and IRF1404ZPBF, PSMN5R0-80BS,118 offers superior thermal performance in compact form factor and guaranteed 80 V operation-critical for 48 V industrial and server power where overvoltage transients exceed 60 V.
Availability
PSMN5R0-80BS,118 is available at Aetrix Electronics and suitable for server power supplies, industrial motor control, DC-DC converters, and high-current load switching requiring stable component supply across multi-year production cycles.
Supply support for PSMN5R0-80BS,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.
This device belongs to Nexperia's standard-level power MOSFET product line, engineered for high-current, high-temperature industrial and communications power conversion where thermal robustness and avalanche tolerance are critical.
FAQ
What is the maximum continuous drain current for PSMN5R0-80BS,118 at 100 °C mounting base temperature?
At Tmb = 100 °C, the continuous drain current is derated to approximately 65 A, based on Figure 1 of the datasheet. This reflects thermal limitation of the D2PAK package rather than silicon capability, and assumes proper PCB copper area and mounting base soldering.
Can PSMN5R0-80BS,118 be driven directly by a 3.3 V microcontroller GPIO?
No-it is a standard-level MOSFET requiring ≥10 V VGS for full enhancement. At 3.3 V, RDS(on) exceeds 50 mΩ, causing excessive conduction loss. A gate driver IC or level-shifting circuit is required for logic-level MCU interfaces.
Is the mounting base electrically isolated from the drain terminal?
No-the mounting base (mb) is internally connected to the drain (pin 2). It must be treated as a live high-voltage node and electrically insulated from heatsinks unless the heatsink is referenced to the same potential as the drain circuit.
Does PSMN5R0-80BS,118 have built-in ESD protection?
Yes-it meets HBM ESD rating of ±2 kV per JESD22-A114, verified in characterization. However, this is not intended for handling-level protection; external ESD safeguards remain recommended during assembly and PCB handling.
PSMN5R0-80BS,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 101 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6793 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 270W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PSMN5R0-80BS,118 FAQ
1.How can I place an order for PSMN5R0-80BS,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN5R0-80BS,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN5R0-80BS,118 reliable?
The price and inventory of PSMN5R0-80BS,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN5R0-80BS,118 is usually 5 days.
3.What payment methods are accepted for PSMN5R0-80BS,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN5R0-80BS,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN5R0-80BS,118?
PSMN5R0-80BS,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN5R0-80BS,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN5R0-80BS,118?
For technical support, including PSMN5R0-80BS,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN5R0-80BS,118 requirements.
6.How does Aetrix verify that PSMN5R0-80BS,118 is sourced from the original manufacturer or authorized distributors?
All PSMN5R0-80BS,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN5R0-80BS,118 meets industry standards.
7.What is the process for return or replacement of PSMN5R0-80BS,118?
All PSMN5R0-80BS,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN5R0-80BS,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN5R0-80BS,118 part is unused and in its original packaging.
Return procedure for PSMN5R0-80BS,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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