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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN5R3-25MLDX

Name: PSMN5R3-25MLDX
Brand: Nexperia USA Inc.
SKU: PSMN5R3-25MLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN5R3-25MLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1210, 8-LFPAK33 (5-Lead)

Datasheet:: PSMN5R3-25MLDX.pdf

Description:: MOSFET N-CH 25V 70A LFPAK33

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Product details

Overview

PSMN5R3-25MLDX from Nexperia is an N-channel logic-level MOSFET in LFPAK33 (SOT1210) package, rated for 25 V V_DS, 5.3 mΩ R_DS(on) @ V_GS = 10 V / T_j = 25 °C, and 70 A I_D at T_mb = 25 °C. It employs NextPowerS3 technology with "SchottkyPlus" body diode for low EMI, soft recovery (s-factor > 1), and optimized 4.5 V gate drive - deployed in secondary-side synchronous rectification and POL modules.

For engineers reviewing the PSMN5R3-25MLDX datasheet, PSMN5R3-25MLDX pinout, PSMN5R3-25MLDX application, or PSMN5R3-25MLDX equivalent, key selection criteria include R_DS(on) temperature stability, Q_G/Q_GD values for high-frequency efficiency, thermal resistance R_th(j-mb) = 2.55 K/W, and LFPAK33 mounting base integration for high-current PCB layouts.

Technical Context

This MOSFET uses a trench-gate superjunction structure with integrated Schottky-like body diode ("SchottkyPlus") enabling soft reverse recovery (t_rr = 19.3 ns, Q_r = 10.8 nC) and low spiking-critical for <1 MHz DC/DC converters. Its gate threshold voltage V_GS(th) = 1.2–2.2 V ensures reliable turn-on at 4.5 V drive while maintaining <1 µA I_DSS leakage at 25 °C.

The LFPAK33 package features clip-bonded die, exposed drain mounting base (pin 4), and three parallel source terminals (pins 1–3) to minimize parasitic inductance and resistance. Thermal performance is defined by R_th(j-mb) = 2.55 K/W and qualification to 175 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 24 V bus and PoL applications
R_DS(on)	5.25–5.9 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 45 A
Q_G(tot)	6.6 nC - Low gate charge supports efficient 500 kHz–1 MHz switching
t_r/t_f	8 ns / 4.9 ns @ V_GS = 4.5 V - Fast, controlled transitions reduce switching losses
R_th(j-mb)	2.55 K/W - Direct thermal path to PCB mounting base enables high-power density layout
s-factor	>1 - Soft-recovery body diode minimizes voltage overshoot and EMI in hard-switched topologies
I_D	70 A continuous @ T_mb = 25 °C - Sustained current capability for VRM and GPU power delivery

Pinout & Package

LFPAK33 (SOT1210) is a leadless, clip-bonded surface-mount package with exposed copper mounting base for enhanced thermal and electrical performance. It eliminates wire bonds and adhesive, supporting 175 °C operation and visual solder inspection via exposed leads.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel low-inductance source connections reduce loop inductance in high-dI/dt synchronous rectifier paths
4	Gate (G)	Single gate terminal with low RG = 0.75 Ω - enables fast, stable turn-on with minimal external gate resistor
Mounting Base	Drain (D)	Exposed copper pad electrically and thermally connected to drain - serves as primary current path and heatsink interface

Key Features

Feature	Design Value
"SchottkyPlus" body diode	Soft reverse recovery (s-factor > 1) with t_rr = 19.3 ns and Q_r = 10.8 nC - reduces snubbing needs and EMI filtering cost
Ultra-low Q_G and Q_GD	6.6 nC total gate charge and 1.3 nC gate-drain charge - improves efficiency in high-frequency (>500 kHz) buck converters
Optimized for 4.5 V drive	V_GS(th) = 1.2–2.2 V and R_DS(on) = 7.07–8.49 mΩ @ V_GS = 4.5 V - ensures full enhancement with standard logic-level controllers
High-reliability construction	Clip-bonded die, solder die attach, no glue/wire bonds - qualified to 175 °C and supports long-term reliability in telecom base stations
Low parasitic inductance	Integrated source and drain routing in LFPAK33 - reduces voltage spikes during turn-off in synchronous rectifier configurations

Applications

Server On-Board DC/DC

Telecom Secondary-Side SR

Use Scenario: Point-of-load conversion delivering 3.3 V/50 A to ASICs and FPGAs in 1U server blades.

IC Role / Device Role: High-side synchronous rectifier in multiphase buck converter with 600 kHz switching frequency.

Use Value: 5.3 mΩ R_DS(on) and 2.55 K/W R_th(j-mb) enable <0.8 W conduction loss and direct thermal coupling to heatsink-equipped PCB.

Use Scenario: Isolated 48 V-to-12 V DC/DC module in 5G baseband unit with strict EMI limits.

IC Role / Device Role: Secondary-side synchronous rectifier replacing Schottky diode in forward topology.

Use Value: "SchottkyPlus" soft recovery (s-factor > 1) reduces output voltage ringing and eliminates need for RC snubber networks.

GPU Voltage Regulator

Brushless Motor Control

Use Scenario: Dual-phase VRM supplying dynamic 0.8–1.2 V to discrete GPU with peak currents >100 A.

IC Role / Device Role: Low-side switch in interleaved buck stage with 1 MHz PWM and 4.5 V gate driver.

Use Value: Q_G = 6.6 nC and Q_GD = 1.3 nC minimize gate drive loss and improve phase current balance under transient load.

Use Scenario: 24 V, 15 A BLDC inverter for industrial fan control with space-constrained PCB layout.

IC Role / Device Role: Half-bridge low-side switch operating at 20 kHz PWM with fast freewheeling.

Use Value: Three-source-pin configuration lowers source inductance, reducing shoot-through risk and improving commutation stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN5R8-25YLH	Higher R_DS(on) = 5.8 mΩ @ 10 V but lower Q_G = 5.8 nC; same LFPAK33 package	Better suited for ultra-high-frequency (>1.2 MHz) designs where gate loss dominates conduction loss	Select when prioritizing switching efficiency over conduction loss in compact POL modules
IRLHS6342TRPBF	SO-8 package, R_DS(on) = 5.4 mΩ @ 4.5 V, Q_G = 10.5 nC, higher R_th(j-a) = 57 K/W	Limited to lower-current (<30 A) applications due to thermal constraints and wire-bond construction	Choose only for legacy SO-8 footprint compatibility - not recommended for new high-power designs

Compared with PSMN5R3-25MLDX, PSMN5R8-25YLH trades marginal R_DS(on) increase for reduced gate charge, while IRLHS6342TRPBF sacrifices thermal performance and reliability for package familiarity - making the original optimal for new 48 V input, high-current synchronous rectifier designs.

Availability

PSMN5R3-25MLDX is available at Aetrix Electronics and suitable for server on-board DC/DC, telecom secondary-side synchronous rectification, and GPU voltage regulator modules requiring stable component supply across extended production lifecycles.

Supply support for PSMN5R3-25MLDX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

This device belongs to the NextPowerS3 portfolio - engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and computing infrastructure where low EMI and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for PSMN5R3-25MLDX at 100 °C mounting base temperature?

The datasheet specifies 50.3 A continuous drain current at T_mb = 100 °C and V_GS = 10 V (Figure 2). This derating reflects thermal limits of the LFPAK33 package and must be validated against actual board layout and airflow conditions.

Does PSMN5R3-25MLDX have avalanche rating, and what is its energy capability?

Yes - it is 100% tested for non-repetitive drain-source avalanche energy E_AS = 76.7 mJ under specified conditions (ID = 15 A, V_sup ≤ 25 V, R_GS = 50 Ω, T_j(init) = 25 °C, unclamped, tp = 315 µs). This supports robustness in inductive load switching.

How does the "SchottkyPlus" body diode differ from a standard MOSFET body diode in practical design?

It delivers Schottky-like soft reverse recovery (s-factor > 1, t_rr = 19.3 ns) with <1 µA leakage at 25 °C - unlike conventional body diodes that exhibit hard recovery and higher leakage. This eliminates snubber circuits in synchronous rectifiers and reduces EMI filter size.

Can PSMN5R3-25MLDX be used with 3.3 V gate drive in logic-level applications?

No - its V_GS(th) range is 1.2–2.2 V, but R_DS(on) rises sharply below 4.5 V (e.g., ~14.43 mΩ @ V_GS = 4.5 V, T_j = 175 °C). At 3.3 V, conduction loss becomes prohibitive; use only with ≥4.5 V gate drive per datasheet Figure 8.

PSMN5R3-25MLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1210, 8-LFPAK33 (5-Lead)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 12.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 858 pF @ 12 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 51W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK33

PSMN5R3-25MLDX FAQ

1.How can I place an order for PSMN5R3-25MLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN5R3-25MLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN5R3-25MLDX reliable?

The price and inventory of PSMN5R3-25MLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN5R3-25MLDX is usually 5 days.

3.What payment methods are accepted for PSMN5R3-25MLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN5R3-25MLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN5R3-25MLDX?

PSMN5R3-25MLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN5R3-25MLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN5R3-25MLDX?

For technical support, including PSMN5R3-25MLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN5R3-25MLDX requirements.

6.How does Aetrix verify that PSMN5R3-25MLDX is sourced from the original manufacturer or authorized distributors?

All PSMN5R3-25MLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN5R3-25MLDX meets industry standards.

7.What is the process for return or replacement of PSMN5R3-25MLDX?

All PSMN5R3-25MLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN5R3-25MLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN5R3-25MLDX part is unused and in its original packaging.

Return procedure for PSMN5R3-25MLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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