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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN5R4-25YLDX

Name: PSMN5R4-25YLDX
Brand: Nexperia USA Inc.
SKU: PSMN5R4-25YLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN5R4-25YLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN5R4-25YLDX.pdf

Description:: MOSFET N-CH 25V 70A LFPAK56

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Product details

Overview

PSMN5R4-25YLD from Nexperia is an N-channel logic-level MOSFET in LFPAK56 (SOT669) package, rated for 25 V V_DS, 5.69 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, with ultra-low Q_G (6.7 nC) and Q_GD (1.3 nC), optimized for high-frequency synchronous rectification in telecom DC/DC converters.

For engineers reviewing the PSMN5R4-25YLD datasheet, PSMN5R4-25YLD pinout, PSMN5R4-25YLD application, or PSMN5R4-25YLD equivalent, key selection criteria include its 4.5 V gate drive compatibility, SchottkyPlus diode performance (soft recovery, s-factor > 1), low spiking/EMI behavior, and 175 °C qualified clip-bonded construction for server power delivery reliability.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 architecture with "SchottkyPlus" technology-delivering soft-recovery diode characteristics (trr = 22.7 ns, Q_r = 12.9 nC) without elevated leakage (<1 µA at 25 °C). Its gate threshold voltage (V_GS(th) = 1.2–2.2 V) ensures robust turn-on with standard logic-level drivers.

The LFPAK56 package integrates a mounting base (mb) directly connected to drain, enabling low-inductance, high-current routing and thermal resistance of only 2.75 K/W (junction-to-mounting base). Dynamic parameters-including 7.8 ns rise time and 4.9 ns fall time under 5 Ω external gate resistance-support efficient operation above 1 MHz switching frequencies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 24 V bus and POL applications
R_DS(on)	5.69 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 42 A
Q_G(tot)	6.7 nC - Reduces gate drive power and enables fast, low-loss switching
Q_GD	1.3 nC @ V_GS = 4.5 V - Minimizes Miller-induced switching delay and shoot-through risk
trr / Q_r	22.7 ns / 12.9 nC - Supports zero-voltage switching (ZVS) and reduces diode recovery losses
R_th(j-mb)	2.75 K/W - Allows >40 W continuous power dissipation with moderate heatsinking
V_GS(th)	1.8 V typ - Ensures full enhancement at 3.3 V or 4.5 V logic-level drive

Pinout & Package

LFPAK56 (SOT669) is a clip-bonded, wave-solderable Power-SO8 variant with exposed mounting base for enhanced thermal and electrical performance. No wire bonds or die attach glue; qualified to 175 °C junction temperature.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt paths
4	Gate (G)	Single low-impedance gate input optimized for 4.5 V logic-level drive
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain; serves as primary high-current output and heatsink interface

Key Features

Feature	Design Value
SchottkyPlus body diode	Soft reverse recovery (s-factor = 1.1), trr = 22.7 ns, Q_r = 12.9 nC, leakage <1 µA @ 25 °C
Ultra-low gate charge	Q_G = 6.7 nC, Q_GD = 1.3 nC @ 4.5 V - cuts gate drive loss and improves EMI profile
High-reliability construction	Clip-bonded die, solder die attach, no wire bonds or epoxy - qualified to 175 °C TJ
Optimized for 4.5 V drive	V_GS(th) = 1.8 V typ, R_DS(on) = 6.8 mΩ @ V_GS = 4.5 V - ensures full enhancement with standard logic outputs
Low parasitic inductance	Integrated source multiplexing (pins 1–3) and drain-mounted base minimize loop inductance for high-frequency stability

Applications

Server DC/DC Converters

Telecom Secondary-Side SR

Use Scenario: High-density 12 V input → 1 V/100 A output VRM in cloud server motherboards.

IC Role / Device Role / Timing Role: Synchronous rectifier on secondary side, operating at 500 kHz–1 MHz with ZVS control.

Use Value: 5.69 mΩ R_DS(on) and 22.7 ns trr reduce conduction + recovery losses by ~18% vs. standard trench MOSFETs, improving system efficiency to >94%.

Use Scenario: 48 V → 12 V isolated DC/DC module in 5G base station power shelves.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in active clamp forward topology, driven by dedicated gate controller.

Use Value: SchottkyPlus diode eliminates snubber requirements and lowers EMI filter size by 30%, easing CISPR-32 Class B compliance.

Point-of-Load Modules

GPU/V-Core Power Delivery

Use Scenario: Compact 6–12 V input → 0.8–1.8 V output POL regulator for FPGA or ASIC core supply.

IC Role / Device Role / Timing Role: High-side switch in buck converter, operated with 4.5 V gate drive from integrated controller.

Use Value: 1.8 V V_GS(th) and 6.8 mΩ @ 4.5 V ensure stable turn-on margin across temperature, eliminating bootstrapping complexity.

Use Scenario: Multi-phase VRM supplying transient-heavy GPU cores (e.g., NVIDIA A100) with >600 A peak current.

IC Role / Device Role / Timing Role: Phase-leg high-side MOSFET in 3–6 phase interleaved buck, switching at 1 MHz.

Use Value: Ultra-low Q_GD (1.3 nC) minimizes dead-time uncertainty and enables tighter phase alignment, reducing output ripple by 25%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP040N04L	40 V V_DS, 4.0 mΩ R_DS(on) @ 10 V, higher Q_G (12.5 nC), TO-252 package	Higher voltage margin but larger footprint and 2.3× higher gate charge - less suitable for >500 kHz designs	Prefer when 40 V rating is required and board space allows DPAK; avoid where gate drive strength or EMI is constrained.
Vishay SiR626DP	30 V V_DS, 5.2 mΩ R_DS(on) @ 10 V, 8.1 nC Q_G, PowerPAK SO-8	Similar R_DS(on) but lacks SchottkyPlus diode - trr = 45 ns, Q_r = 28 nC - increases recovery loss in hard-switched SR	Acceptable for lower-frequency (<300 kHz) or non-synchronous rectification; not recommended for ZVS telecom SR due to higher Q_r.

Compared with IPP040N04L and SiR626DP, PSMN5R4-25YLD delivers superior high-frequency efficiency via lower Q_GD, faster soft recovery, and LFPAK56's thermal advantage-making it the optimal choice for compact, high-efficiency 24–48 V telecom/server POL and VRM designs.

Availability

PSMN5R4-25YLD is available at Aetrix Electronics and suitable for server DC/DC converters, telecom secondary-side synchronous rectification, and GPU/V-core power delivery requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PSMN5R4-25YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions, with leadership in automotive-grade and industrial power semiconductors.

This device belongs to the NextPowerS3 portfolio-designed specifically for high-efficiency, high-frequency power conversion in data center, telecom, and computing infrastructure where low Q_G, soft-recovery diodes, and 175 °C reliability are critical.

FAQ

What is the maximum continuous drain current for PSMN5R4-25YLD at 100 °C mounting base temperature?

At T_mb = 100 °C and V_GS ≥ 10 V, the continuous drain current is 49 A per the datasheet Fig. 2. This derating reflects thermal limits of the LFPAK56 package and ensures safe operation within R_th(j-mb) = 2.75 K/W and P_tot = 47 W at T_mb = 25 °C. Operation above this requires active cooling or reduced duty cycle.

Does PSMN5R4-25YLD require a gate resistor for stability in 1 MHz switching applications?

Yes-a 5 Ω external gate resistor is used in the datasheet's dynamic characterization (Fig. 12–13) to control dV/dt and prevent oscillation. With its ultra-low Q_GD (1.3 nC) and LFPAK56's low inductance, this value balances switching speed and ringing suppression; values below 3 Ω may increase EMI, while >10 Ω adds unnecessary switching loss.

How does the SchottkyPlus body diode differ from a standard MOSFET body diode in practical layout?

The SchottkyPlus diode achieves soft reverse recovery (s-factor = 1.1) and low Q_r (12.9 nC) without elevated leakage-enabling elimination of external snubbers and smaller EMI filters. Layout benefits include relaxed placement of input capacitors and reduced need for tight source-loop routing, unlike standard diodes that demand minimized commutation loop area to suppress voltage spikes.

Is PSMN5R4-25YLD suitable for automotive applications?

No-this part is not AEC-Q101 qualified and is explicitly designated for industrial/computing use per Nexperia's legal disclaimers. It lacks automotive-specific stress testing, failure-in-time (FIT) reporting, and guaranteed 15-year supply. For automotive 12 V systems, consider Nexperia's AEC-Q101-certified LFPAK56 variants like PSMN2R0-30YLH.

PSMN5R4-25YLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.69mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 12.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 858 pF @ 12 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN5R4-25YLDX FAQ

1.How can I place an order for PSMN5R4-25YLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN5R4-25YLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN5R4-25YLDX reliable?

The price and inventory of PSMN5R4-25YLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN5R4-25YLDX is usually 5 days.

3.What payment methods are accepted for PSMN5R4-25YLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN5R4-25YLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN5R4-25YLDX?

PSMN5R4-25YLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN5R4-25YLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN5R4-25YLDX?

For technical support, including PSMN5R4-25YLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN5R4-25YLDX requirements.

6.How does Aetrix verify that PSMN5R4-25YLDX is sourced from the original manufacturer or authorized distributors?

All PSMN5R4-25YLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN5R4-25YLDX meets industry standards.

7.What is the process for return or replacement of PSMN5R4-25YLDX?

All PSMN5R4-25YLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN5R4-25YLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN5R4-25YLDX part is unused and in its original packaging.

Return procedure for PSMN5R4-25YLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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