Nexperia USA Inc. PSMN5R6-100BS,118

Overview

PSMN5R6-100BS from Nexperia is a standard-level N-channel MOSFET in D2PAK (SOT404) package, rated for 100 V V_DS, 5.6 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 100 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-current power switch in DC-DC converters, server power supplies, and motor control circuits where low conduction loss and robust avalanche capability are required.

For engineers reviewing the PSMN5R6-100BS datasheet, PSMN5R6-100BS pinout, PSMN5R6-100BS application, or PSMN5R6-100BS equivalent, key selection criteria include its 5.6 mΩ on-resistance at 25 °C, 43 nC gate-drain charge, 468 mJ unclamped avalanche energy, and thermal resistance of 0.3 K/W from junction to mounting base - all critical for high-efficiency, thermally constrained power stage designs.

Technical Context

This MOSFET employs a planar silicon process optimized for standard-level gate drive compatibility (V_GS(th) = 2–4 V, typ. 3 V), enabling direct use with 10 V logic or PWM controllers without level-shifting. Its R_DS(on) exhibits strong temperature dependence - rising from 4.72 mΩ at 25 °C to 13.22 mΩ at 175 °C - requiring thermal derating in sustained high-power operation.

The device features an integrated body diode with 0.79 V forward voltage at 25 A and 25 °C, 67 ns reverse recovery time, and 182 nC recovered charge, supporting synchronous rectification and hard-switched topologies. Its SOA is defined up to 100 V and 539 A peak pulsed current (tp ≤ 10 µs), with DC limit governed by package thermal limits rather than silicon capability.

Key Specifications

Pinout & Package

PSMN5R6-100BS uses the SOT404 (D2PAK) package: a plastic single-ended surface-mounted outline with 3 leads (one cropped), featuring an exposed metal mounting base electrically connected to the drain terminal for low-inductance, high-current thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP100N10F7 and IRFB4115PBF, PSMN5R6-100BS delivers superior thermal performance (0.3 K/W), higher temperature qualification (175 °C), and greater avalanche energy (468 mJ), making it optimal for high-reliability, thermally dense, or inductively stressed applications where long-term stability is non-negotiable.

Availability

PSMN5R6-100BS is available at Aetrix Electronics and suitable for server power supplies, industrial motor control systems, and high-efficiency DC-DC converters requiring stable component supply, long-lifecycle support, and traceable sourcing for volume production.

Supply support for PSMN5R6-100BS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

This device belongs to Nexperia's standard-level Power MOSFET product line, engineered for cost-effective, thermally robust switching in industrial power conversion, communications infrastructure, and domestic equipment where gate drive simplicity and ruggedness are paramount.

FAQ

Is PSMN5R6-100BS suitable for gate drive with 5 V microcontrollers?

No - PSMN5R6-100BS is a standard-level MOSFET with V_GS(th) of 2–4 V and specified R_DS(on) at V_GS = 10 V. At 5 V, R_DS(on) rises significantly (≥15 mΩ), increasing conduction loss and thermal stress. It requires a 10 V gate driver for full performance and safe continuous operation.

What is the maximum PCB copper area needed for thermal performance at 100 A?

At T_mb = 25 °C and 100 A, the device dissipates ~56 W (I²R = 100² × 0.0056). With R_th(j-mb) = 0.3 K/W, junction temperature reaches ~168 °C - within 175 °C limit. A minimum 10 cm² 2-oz copper pad with thermal vias to internal planes is recommended to maintain T_mb ≤ 25 °C under forced convection.

Does PSMN5R6-100BS have avalanche-rated capability for inductive load switching?

Yes - it is fully characterized for unclamped inductive switching with E_AS = 468 mJ at V_GS = 10 V, I_D = 100 A, and T_j(init) = 25 °C. This rating applies to single-event conditions; repetitive avalanche is not guaranteed and must be avoided via proper snubber or clamp design.

Can the mounting base be electrically isolated from the PCB ground plane?

No - the mounting base is internally connected to the drain (pin 2). To isolate it, a thermally conductive but electrically insulating pad (e.g., ceramic or silicone-based) must be used between the base and heatsink, and the heatsink itself must be isolated from all other circuit potentials to prevent shorting the drain node.