Nexperia USA Inc. PSMN5R6-100PS,127
- Part No.:
- PSMN5R6-100PS,127
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PSMN5R6-100PS,127.pdf
- Description:
- MOSFET N-CH 100V 100A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:2,089
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Product details
Overview
PSMN5R6-100PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 100 V drain-source voltage, 5.6 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and qualified to 175 °C junction temperature. It delivers 100 A continuous drain current at Tmb = 25 °C and supports high-efficiency power switching in industrial DC-DC converters and motor control stages.
For engineers reviewing the PSMN5R6-100PS datasheet, PSMN5R6-100PS pinout, PSMN5R6-100PS application, or PSMN5R6-100PS equivalent, key selection criteria include its 4.3–5.6 mΩ RDS(on) range, 141 nC total gate charge, 469 mJ unclamped avalanche energy, and TO-220AB thermal resistance of 0.3–0.49 K/W (junction-to-mounting base).
Technical Context
This MOSFET employs planar silicon technology with optimized cell layout for low conduction loss and robust dynamic avalanche performance. Its gate threshold voltage (2–4 V typ.) ensures compatibility with standard 10 V gate drivers while maintaining stable turn-on behavior across -55 to 175 °C junction temperature.
The device integrates an intrinsic body diode with 0.79–1.2 V forward voltage at 25 A and exhibits 67 ns reverse recovery time and 182 nC recovered charge under defined test conditions - enabling reliable synchronous rectification and hard-switched topologies without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V maximum - supports 48 V and 60 V bus systems with margin for transient overvoltage |
| RDS(on) | 4.3–5.6 mΩ at VGS = 10 V, ID = 25 A, Tj = 25 °C - enables <1 W conduction loss at 50 A |
| ID (cont.) | 100 A at Tmb = 25 °C - requires heatsink mounting for sustained operation above ~30 A |
| QG(tot) | 141 nC - determines gate drive power requirement (~1.4 mJ per 10 V switch cycle at 100 kHz) |
| EAS | 469 mJ unclamped avalanche energy - withstands single-pulse inductive energy without failure in load-switch or motor-drive fault conditions |
| Rth(j-mb) | 0.3–0.49 K/W - defines thermal path efficiency when mounted to heatsink; enables ~300 W dissipation with 100 K ΔT |
| Ciss | 8061 pF at VDS = 50 V - impacts high-frequency switching losses and EMI filter design |
Pinout & Package
PSMN5R6-100PS uses the TO-220AB (SOT78) plastic single-ended package with heatsink mounting and one mounting hole. The metal mounting base is electrically connected to the drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; requires ≥10 V for full enhancement; gate leakage ≤100 nA at 20 V |
| 2 (D) | Drain | Main high-side power path; internally bonded to mounting base - must be isolated from heatsink unless drain-referenced |
| 3 (S) | Source | Power return node; referenced to gate drive ground; source-drain diode VSD = 0.79–1.2 V at 25 A |
| Mounting Base (mb) | Drain (electrically tied) | Primary thermal interface; contributes >95% of heat removal; requires thermal compound and mechanical clamping |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 4.3 mΩ typical enables <0.8 W conduction loss at 40 A, reducing thermal stress in compact power modules |
| High avalanche ruggedness | 469 mJ non-repetitive EAS allows safe operation during inductive load interruption without snubber circuits |
| Standard-level gate drive | 2–4 V VGS(th) and full enhancement at 10 V simplifies use with legacy 10 V gate drivers and eliminates need for level shifters |
| 175 °C junction rating | Enables operation in high-ambient environments (e.g., server PSU hot zones, industrial enclosures) without derating below 100 A |
| TO-220AB thermal performance | 0.3 K/W typical Rth(j-mb) supports >300 W power handling with properly sized heatsink - superior to DPAK/D2PAK alternatives |
Applications
| Server Power Supply | Industrial Motor Control |
|---|---|
Use Scenario: Primary-side synchronous rectification and secondary-side OR-ing in 1U/2U AC-DC PSUs delivering 800–2000 W. IC Role / Device Role / Timing Role: High-current, low-RDS(on) N-channel switch operating in continuous conduction mode at 100–300 kHz. Use Value: Reduces conduction loss by >35% vs. 8 mΩ alternatives, lowering heatsink size and improving 80 PLUS Titanium efficiency compliance. |
Use Scenario: Half-bridge leg in 3-phase BLDC inverters for HVAC compressors and industrial pumps (1–5 kW range). IC Role / Device Role / Timing Role: Main power switch handling 40–80 A peak phase current with fast switching and avalanche tolerance during commutation faults. Use Value: Withstands 469 mJ unclamped avalanche events during shoot-through or encoder error, eliminating need for external TVS protection. |
| DC-DC Converter | Load Switching |
Use Scenario: 48 V–12 V step-down converter in telecom power shelves and data center PDUs. IC Role / Device Role / Timing Role: High-side primary switch operating at 200–500 kHz with 100 A pulsed capability and low QG/QGD ratio. Use Value: 43 nC QGD minimizes Miller-induced false turn-on risk, enabling robust gate drive with 1.5 Ω external resistor. |
Use Scenario: Hot-swap and inrush-limited power distribution in industrial PLC backplanes and modular I/O systems. IC Role / Device Role / Timing Role: Single-pole, high-current load switch controlling up to 100 A loads with controlled turn-on via gate ramping. Use Value: 100 V rating and 5.6 mΩ on-resistance allow direct replacement of dual-MOSFET solutions, reducing BOM count and PCB area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP100N10F7 | RDS(on) = 6.5 mΩ (typ.), QG = 120 nC, TO-220FP package (isolated tab) | Lower gate charge improves switching efficiency but higher RDS(on) increases conduction loss at >60 A | Preferred where gate drive power is constrained and heatsink isolation is required; less suitable for ultra-low-loss 100 A designs |
| IRF540NPBF | RDS(on) = 44 mΩ (typ.), VDS = 100 V, TO-220AB, older planar process | Higher on-resistance and lower avalanche rating (250 mJ) limit use to <20 A continuous or non-avalanche-critical roles | Only viable for cost-sensitive, low-power replacements where thermal headroom exists; not drop-in for PSMN5R6-100PS performance tier |
Compared with STP100N10F7 and IRF540NPBF, PSMN5R6-100PS offers the lowest RDS(on) among TO-220AB 100 V devices, enabling highest current density and best thermal margin in space-constrained industrial power stages - critical for server PSUs and motor drives requiring >80 A continuous conduction.
Availability
PSMN5R6-100PS is available at Aetrix Electronics and suitable for server power supplies, industrial motor control systems, and high-current DC-DC converters requiring stable component supply and long-term industrial lifecycle support.
Supply support for PSMN5R6-100PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.
This part belongs to Nexperia's standard-level TrenchMOS portfolio, engineered for cost-effective, thermally robust switching in industrial power conversion and motor drive applications - emphasizing avalanche ruggedness, high-temperature reliability, and TO-220 thermal performance.
FAQ
Is PSMN5R6-100PS suitable for surface-mount assembly?
No - PSMN5R6-100PS uses the through-hole TO-220AB (SOT78) package with a metal mounting base designed for heatsink attachment and mechanical clamping. It is not compatible with reflow soldering or SMT pick-and-place processes. Board layout must include plated-through holes for pins 1–3 and a large copper pad for the mounting base with thermal vias.
What is the maximum safe operating temperature for continuous 100 A operation?
Continuous 100 A operation is only rated at Tmb = 25 °C per Figure 1. At higher mounting base temperatures, current must be derated: e.g., 70 A at Tmb = 75 °C and 40 A at Tmb = 110 °C. Junction temperature must remain ≤175 °C, requiring thermal design that maintains Rth(m-b) + Rth(b-sink) < 0.5 K/W for full-rated current.
Does PSMN5R6-100PS have integrated gate protection?
No - it lacks built-in gate Zener or series resistance. External gate protection is required: a 15 V Zener clamp between gate and source, plus a 10–100 Ω series resistor close to the gate pin, is recommended to prevent VGS exceeding ±20 V absolute maximum and suppress ringing during fast switching.
Can this MOSFET replace IRF540N in existing designs?
Yes, with electrical and thermal validation - PSMN5R6-100PS offers significantly lower RDS(on) (5.6 mΩ vs. 44 mΩ), higher current rating (100 A vs. 33 A), and better avalanche capability (469 mJ vs. 250 mJ), but requires updated gate drive strength due to higher QG (141 nC vs. 71 nC) and careful thermal management due to higher power density.
PSMN5R6-100PS,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 141 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8061 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 306W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PSMN5R6-100PS,127 FAQ
1.How can I place an order for PSMN5R6-100PS,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN5R6-100PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN5R6-100PS,127 reliable?
The price and inventory of PSMN5R6-100PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN5R6-100PS,127 is usually 5 days.
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5.How can I obtain technical support or documentation for PSMN5R6-100PS,127?
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6.How does Aetrix verify that PSMN5R6-100PS,127 is sourced from the original manufacturer or authorized distributors?
All PSMN5R6-100PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN5R6-100PS,127 meets industry standards.
7.What is the process for return or replacement of PSMN5R6-100PS,127?
All PSMN5R6-100PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN5R6-100PS,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN5R6-100PS,127 part is unused and in its original packaging.
Return procedure for PSMN5R6-100PS,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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