NXP Semiconductors PSMN5R8-30LL,115

Overview

PSMN5R8-30LL from Nexperia is a logic-level N-channel MOSFET in DFN3333-8 package, rated for 30 V drain-source voltage, 5.8 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 150 °C junction temperature. It delivers high-efficiency power switching in compact industrial and power supply designs.

For engineers reviewing the PSMN5R8-30LL datasheet, PSMN5R8-30LL pinout, PSMN5R8-30LL application, or PSMN5R8-30LL equivalent, key selection considerations include its 4.5 V logic-level gate drive compatibility, low thermal resistance (R_th(j-mb) = 1.3 K/W typ), and avalanche energy rating of 47 mJ.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low conduction losses and fast switching with Q_G(tot) = 24 nC at V_GS = 10 V and Q_GD = 3.4 nC. Its gate threshold voltage ranges from 1.3 V to 2.15 V at 25 °C, enabling reliable turn-on with standard logic-level drivers.

The device features an integrated source-drain diode with V_SD = 0.85 V typ at 10 A and 25 °C, and exhibits robust unclamped avalanche capability (E_DS(AL)S = 47 mJ). Thermal design is supported by a low R_th(j-mb) of 1.3 K/W and a mounting-base–referenced package footprint.

Key Specifications

Pinout & Package

DFN3333-8 (SOT873-1) is a thermally enhanced, leadless plastic package measuring 3.3 mm × 3.3 mm × 1.0 mm, with exposed drain pad on the bottom surface for optimal heat transfer to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with PSMN5R8-30LL, PSMN4R3-30ML offers lower conduction loss at the cost of increased gate drive demand and board space, while DMN3025LFG-7 provides superior R_DS(on) and current rating but lacks extended temperature qualification-making PSMN5R8-30LL optimal for thermally demanding industrial power stages where reliability and package compactness are prioritized.

Availability

PSMN5R8-30LL is available at Aetrix Electronics and suitable for battery protection, DC-to-DC converters, and load switching requiring stable component supply and long-term industrial-grade availability.

Supply support for PSMN5R8-30LL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The PSMN5R8-30LL belongs to Nexperia's logic-level TrenchMOS portfolio, engineered specifically for high-efficiency, space-constrained power switching in industrial and communications equipment where thermal robustness and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current rating for PSMN5R8-30LL?

The PSMN5R8-30LL is rated for 40 A continuous drain current at T_mb = 25 °C with V_GS = 10 V. Derating applies above 25 °C mounting base temperature per Figure 1 in the datasheet, reaching ~25 A at T_mb = 100 °C. This rating assumes adequate PCB copper area for thermal dissipation, leveraging the device's low R_th(j-mb) of 1.3 K/W.

Does PSMN5R8-30LL support 3.3 V logic-level gate drive?

Yes, PSMN5R8-30LL is explicitly designed as a logic-level MOSFET and fully enhances at V_GS = 4.5 V, with typical R_DS(on) = 6.1 mΩ at that voltage. At 3.3 V, it remains partially enhanced (V_GS(th) min = 0.5 V), but conduction loss increases significantly; for reliable operation, 4.5 V or higher gate drive is recommended. The device's V_GS(th) range (1.3–2.15 V at 25 °C) ensures predictable turn-on with standard 3.3 V/5 V controllers.

What is the thermal resistance from junction to mounting base for PSMN5R8-30LL?

The PSMN5R8-30LL has a typical thermal resistance of R_th(j-mb) = 1.3 K/W, with a maximum of 1.7 K/W, measured from junction to the exposed drain pad (mounting base). This value assumes proper soldering to a minimum 3.3 mm × 3.3 mm copper pad, enabling efficient heat transfer to the PCB. It is substantially lower than R_th(j-a) (54–60 K/W), confirming the necessity of using the mounting base for thermal management in high-power applications.

Can PSMN5R8-30LL be used in avalanche conditions?

Yes, PSMN5R8-30LL is characterized for non-repetitive unclamped inductive switching with E_DS(AL)S = 47 mJ at V_GS = 10 V, T_j(init) = 25 °C, I_D = 40 A, and R_GS = 50 Ω. This rating provides design margin for transient overvoltage events in relay driving, motor control, or DC-DC converter freewheeling paths. Repetitive avalanche operation is not guaranteed and must be validated per application requirements.

What is the gate charge profile of PSMN5R8-30LL and how does it affect switching performance?

The PSMN5R8-30LL has Q_G(tot) = 24 nC at V_GS = 10 V and Q_GD = 3.4 nC, resulting in a low Q_GD/Q_G(tot) ratio (~14%). This profile supports fast, controllable switching with minimal Miller-induced delay, enabling clean turn-off even with modest gate drivers. Measured turn-off delay (t_d(off)) is 41 ns and fall time (t_f) is 23 ns under standard test conditions, making PSMN5R8-30LL well-suited for high-frequency synchronous rectification.