Nexperia USA Inc. PSMN5R8-40YS,115

Overview

PSMN5R8-40YS from Nexperia is a standard-level N-channel MOSFET in LFPAK (SOT669) package, rated for 40 V drain-source voltage, 5.7 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 90 A continuous drain current at T_mb = 25 °C and supports high-efficiency switching in DC-DC converters and lithium-ion battery protection circuits.

For engineers reviewing the PSMN5R8-40YS datasheet, PSMN5R8-40YS pinout, PSMN5R8-40YS application, or PSMN5R8-40YS equivalent, key selection factors include its 0.81 K/W typical junction-to-mounting-base thermal resistance, 28.8 nC total gate charge, 7.7 mΩ R_DS(on) at 100 °C, unclamped avalanche energy rating of 65 mJ, and LFPAK's power density advantage over standard SO8.

Technical Context

This MOSFET employs Nexperia's Advanced TrenchMOS process to achieve low on-resistance and low gate charge simultaneously. Its LFPAK (SOT669) package integrates a thermally optimized mounting base directly connected to the drain, enabling efficient heat transfer to the PCB copper pour.

The device features a gate-source threshold voltage of 2–4 V at 25 °C and maintains stable R_DS(on) up to 175 °C (10.26 mΩ max), with robust 40 V V_DS and ±20 V V_GS ratings. Its 360 A peak drain current capability and 33 ns reverse recovery time support fast-switching motor control and server power supply designs.

Key Specifications

Pinout & Package

PSMN5R8-40YS uses the SOT669 (LFPAK) 4-lead surface-mount package, featuring an exposed mounting base electrically connected to the drain for enhanced thermal and electrical performance. The compact 5.0 × 3.3 mm footprint delivers higher power density than standard PowerSO8.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with PSMN4R3-30YL,115, the PSMN5R8-40YS trades 1.4 mΩ higher R_DS(on) for +10 V blocking margin and superior 175 °C qualification - critical for server and industrial ambient reliability. Against IPB113N20N3 G, it offers 4.6× lower thermal resistance and 50% smaller footprint despite lower voltage rating, making it optimal for space-constrained 48 V intermediate bus applications.

Availability

PSMN5R8-40YS is available at Aetrix Electronics and suitable for DC-DC converters, lithium-ion battery protection circuits, and motor control systems requiring stable component supply across long production lifecycles.

Supply support for PSMN5R8-40YS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, diodes, and ESD protection.

The PSMN5R8-40YS belongs to Nexperia's standard-level LFPAK MOSFET product line, engineered for cost-sensitive yet thermally demanding industrial and communications power applications where 40 V rating, 175 °C operation, and power density are essential.

FAQ

What is the maximum continuous drain current for PSMN5R8-40YS at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to approximately 64 A per the datasheet Figure 1. This value is defined under V_GS = 10 V and accounts for thermal limitations of the LFPAK package's junction-to-mounting-base path, not ambient temperature.

Does PSMN5R8-40YS have avalanche capability, and how is it specified?

Yes - it is rated for non-repetitive drain-source avalanche energy (E_AS) of 65 mJ under unclamped inductive switching conditions: V_GS = 10 V, T_j(init) = 25 °C, I_D = 90 A, V_sup ≤ 40 V, and R_GS = 50 Ω. This is measured per JEDEC JESD24-11 and reflects single-event ruggedness, not repetitive operation.

How does the LFPAK package improve thermal performance versus standard SO8?

The LFPAK (SOT669) package reduces R_th(j-mb) to 0.81 K/W typical - roughly 3× lower than standard SO8's ~2.5 K/W - by using a direct copper mounting base connected to the drain. This enables higher power dissipation with less PCB copper area and eliminates the thermal bottleneck of plastic-body leads.

Can PSMN5R8-40YS be used in linear mode (saturation region) for analog applications?

No - it is optimized for switching operation only. Its Safe Operating Area (SOA) curve (Figure 3) shows limited linear-mode capability: at V_DS = 10 V, maximum continuous current drops to ~25 A due to thermal runaway risk. It lacks the SOA robustness and SOA-rated pulse specifications required for analog pass elements.