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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN6R0-25YLDX

Name: PSMN6R0-25YLDX
Brand: Nexperia USA Inc.
SKU: PSMN6R0-25YLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN6R0-25YLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN6R0-25YLDX.pdf

Description:: MOSFET N-CH 25V 61A LFPAK56

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Product details

Overview

PSMN6R0-25YLD from Nexperia is an N-channel 25 V logic-level MOSFET in LFPAK56 (SOT669) package, featuring 6.75 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 43 W power dissipation at T_mb = 25 °C, and optimized for 4.5 V gate drive. It serves as a high-efficiency synchronous rectifier or power switch in DC/DC converters for telecom and server applications.

For engineers reviewing the PSMN6R0-25YLD datasheet, PSMN6R0-25YLD pinout, PSMN6R0-25YLD application, or PSMN6R0-25YLD equivalent, key selection criteria include its SchottkyPlus diode performance (soft-recovery s-factor > 1), ultra-low Q_G (5.6 nC) and Q_GD (1.1 nC), 175 °C junction rating, and LFPAK56 clip-bonded construction enabling high-current, low-EMI switching.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 architecture with "SchottkyPlus" technology-delivering Schottky-like soft-recovery (s-factor ≥ 1.1) and low spiking without elevated leakage (< 1 µA at 25 °C). Its gate threshold voltage (V_GS(th)) is 1.2–2.2 V, enabling robust turn-on with 4.5 V logic-level drive.

The device integrates a source-drain diode with t_rr = 20.2 ns and Q_r = 10 nC, supporting high-frequency synchronous rectification. Thermal resistance from junction to mounting base is 3.1–3.5 K/W, and it is qualified to 175 °C with solder-reflow compatibility and visual-solder inspection support via exposed leads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V maximum - defines safe blocking capability in 12 V and 24 V bus systems
R_DS(on)	6.75 mΩ max at V_GS = 10 V, T_j = 25 °C - enables <1 W conduction loss at 40 A
Q_G(tot)	5.6 nC typical - reduces gate drive power and enables >1 MHz switching
t_r/t_f	7.4 ns / 4.5 ns typical - supports fast edge control and low switching loss
T_j max	175 °C - allows operation in thermally constrained POL and VRM modules
I_D	61 A continuous at T_mb = 25 °C - supports high-current secondary-side rectification
R_th(j-mb)	3.1 K/W typical - enables efficient heat transfer to PCB copper or heatsink

Pinout & Package

LFPAK56 (SOT669) is a clip-bonded, solder-die-attached Power-SO8 variant with no wire bonds or adhesive. Its exposed mounting base (pin mb) connects directly to drain, while pins 1–3 are internally paralleled source terminals and pin 4 is gate.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 (S)	Source	Three paralleled low-inductance source paths reduce loop inductance and improve current sharing
4 (G)	Gate	Single gate input optimized for 4.5 V logic-level drive; low C_iss (705 pF) minimizes Miller effect
mb (D)	Mounting base / Drain	Exposed copper pad electrically connected to drain; provides primary thermal path and mechanical anchoring

Key Features

Feature	Design Value
SchottkyPlus body diode	Soft reverse recovery (s-factor ≥ 1.1) with 20.2 ns t_rr and <1 µA leakage at 25 °C
Ultra-low gate charge	Q_G = 5.6 nC and Q_GD = 1.1 nC enable high-frequency, low-loss switching
Optimized for 4.5 V drive	V_GS(th) = 1.2–2.2 V and R_DS(on) = 8.29–10.19 mΩ at V_GS = 4.5 V ensure reliable logic-level turn-on
High-reliability construction	Clip-bonded die, solder die attach, no glue/wire bonds; qualified to 175 °C and wave-solderable
Low EMI design	Reduced parasitic inductance and ringing due to symmetric source layout and minimized loop area

Applications

Server DC/DC Converter

Telecom Secondary Rectifier

Use Scenario: High-density 48 V to 12 V intermediate bus converter in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier on secondary side, replacing Schottky diodes to reduce conduction loss.

Use Value: 6.75 mΩ R_DS(on) cuts rectifier losses by >40% vs. 40 V Schottky, improving full-load efficiency to >95%.

Use Scenario: Isolated 54 V to 12 V DC/DC module in telecom base station power supplies.

IC Role / Device Role / Timing Role: Low-voltage-side power switch in active clamp forward topology.

Use Value: Soft-recovery diode (s-factor > 1.1) suppresses voltage spikes during dead-time, reducing snubber losses and EMI filter size.

GPU Voltage Regulator

Brushless Motor Drive

Use Scenario: Point-of-load (POL) regulator delivering up to 60 A to GPU core logic.

IC Role / Device Role / Timing Role: High-side or low-side switch in multiphase buck converter with 500 kHz–1 MHz switching.

Use Value: 5.6 nC Q_G and 7.4 ns t_r allow clean 1 MHz operation with <100 mW gate drive loss per phase.

Use Scenario: Inverter half-bridge leg in 24 V BLDC motor controller for industrial fans or pumps.

IC Role / Device Role / Timing Role: Low-side switching element handling 30–45 A peak phase current.

Use Value: 175 °C T_j rating and 3.1 K/W R_th(j-mb) sustain 43 A continuous current at 100 °C board temperature without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN5R5-25YLH	Lower R_DS(on) (5.5 mΩ typ), higher Q_G (7.1 nC), same LFPAK56 package and 4.5 V drive	Better conduction loss at high current; trade-off in switching loss above 500 kHz	Select when conduction loss dominates (e.g., <300 kHz POL) and thermal margin is tight
IRLHS6342	6.2 mΩ R_DS(on), 12 V V_DS, SO-8 package, higher R_th(j-a) (125 K/W)	Limited to ≤12 V systems; less robust thermal performance in high-power density layouts	Only suitable for low-voltage, low-power applications where 25 V rating is unnecessary

Compared with PSMN6R0-25YLD, PSMN5R5-25YLH offers lower conduction loss but higher gate charge, making it preferable in low-frequency, high-current designs; IRLHS6342 lacks the 25 V rating and thermal robustness needed for telecom/server 48 V-derived rails.

Availability

PSMN6R0-25YLD is available at Aetrix Electronics and suitable for server DC/DC converters, telecom power supplies, and GPU voltage regulators requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for PSMN6R0-25YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

This device belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and computing infrastructure where low R_DS(on), fast switching, and thermal resilience are critical.

FAQ

What is the maximum continuous drain current at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is 43 A (per Table 5 Limiting Values). This is derived from thermal derating of the 61 A rating at 25 °C using the normalized power dissipation curve in Figure 2, ensuring safe operation within the 43 W P_tot limit and 3.1 K/W R_th(j-mb).

Does PSMN6R0-25YLD have avalanche ruggedness rating?

Yes - it is rated for 50.9 mJ non-repetitive drain-source avalanche energy (E_DS(AL)S) under specified conditions: ID = 15 A, V_sup ≤ 25 V, R_GS = 50 Ω, V_GS = 10 V, T_j(init) = 25 °C, unclamped, tp = 209 µs. This rating is 100% production-tested per datasheet footnote [1].

Can this MOSFET be used with 3.3 V gate drive?

No - while V_GS(th) starts at 1.2 V, R_DS(on) rises sharply below 4.5 V. At V_GS = 3.3 V and ID = 10 A, R_DS(on) exceeds 15 mΩ (Fig. 8), doubling conduction loss. The device is explicitly optimized for ≥4.5 V logic-level drive, not 3.3 V microcontroller outputs.

Is the mounting base electrically isolated from the PCB?

No - the mounting base (mb) is internally connected to the drain terminal and must be routed as a high-voltage node on the PCB. It is not insulated; isolation requires external insulation (e.g., thermal pad with dielectric layer) if mounted to a grounded heatsink.

PSMN6R0-25YLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.75mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 10.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 705 pF @ 12 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN6R0-25YLDX FAQ

1.How can I place an order for PSMN6R0-25YLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN6R0-25YLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN6R0-25YLDX reliable?

The price and inventory of PSMN6R0-25YLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN6R0-25YLDX is usually 5 days.

3.What payment methods are accepted for PSMN6R0-25YLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN6R0-25YLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN6R0-25YLDX?

PSMN6R0-25YLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN6R0-25YLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN6R0-25YLDX?

For technical support, including PSMN6R0-25YLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN6R0-25YLDX requirements.

6.How does Aetrix verify that PSMN6R0-25YLDX is sourced from the original manufacturer or authorized distributors?

All PSMN6R0-25YLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN6R0-25YLDX meets industry standards.

7.What is the process for return or replacement of PSMN6R0-25YLDX?

All PSMN6R0-25YLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN6R0-25YLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN6R0-25YLDX part is unused and in its original packaging.

Return procedure for PSMN6R0-25YLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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