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Nexperia USA Inc. PSMN6R0-30YLB,115
- Part No.:
- PSMN6R0-30YLB,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
PSMN6R0-30YLB,115.pdf
- Description:
- MOSFET N-CH 30V 71A LFPAK56
- Quantity:
- Payment:
- Shipping:
Inventory:2,922
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Product details
Overview
PSMN6R0-30YLB,115 from Nexperia is a logic-level enhancement-mode N-channel MOSFET in LFPAK (SOT669) package, rated for 30 V VDS, 6.5 mΩ RDS(on) at VGS = 10 V and 20 A, optimized for 4.5 V gate drive using NextPower Superjunction technology, and qualified to 175 °C junction temperature for industrial DC-DC converters and synchronous buck regulators.
For engineers reviewing the PSMN6R0-30YLB,115 datasheet, PSMN6R0-30YLB,115 pinout, PSMN6R0-30YLB,115 application, or PSMN6R0-30YLB,115 equivalent, key selection criteria include its ultra-low QG (9 nC @ 4.5 V), low RDS(on) temperature stability (13.4 mΩ max @ 150 °C), 2.35 K/W Rth(j-mb), and avalanche ruggedness (13 mJ unclamped).
Technical Context
This MOSFET employs Nexperia's NextPower Superjunction architecture to achieve ultra-low gate charge (QGD = 2.6 nC, QG(tot) = 9 nC @ 4.5 V) and minimized output capacitance (Coss = 278 pF), enabling high-frequency switching with reduced switching losses in hard-switched topologies. Its gate threshold voltage (VGS(th) = 1.05–1.95 V @ 25 °C) ensures robust turn-on with standard logic-level drivers.
The device integrates a monolithic source-drain diode with trr = 25.5 ns and Qr = 15 nC, supporting synchronous rectification and reducing body-diode conduction loss. Thermal design leverages the LFPAK's low Rth(j-mb) (2.35 K/W typ) and mounting-base thermal path, allowing 58 W power dissipation at Tmb = 25 °C without heatsink.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum drain-source voltage - supports 24 V nominal bus systems with 20 % margin for transients. |
| RDS(on) | 6.5 mΩ max @ VGS = 10 V, ID = 20 A, Tj = 25 °C - enables <1.3 W conduction loss at 20 A continuous current. |
| QG(tot) | 9 nC @ VGS = 4.5 V - reduces gate driver power demand and enables efficient operation with low-voltage microcontroller GPIOs. |
| Rth(j-mb) | 2.35 K/W typical - allows direct PCB copper pad thermal coupling to heatsink or chassis, eliminating need for thermal vias in many designs. |
| trr | 25.5 ns - minimizes reverse recovery loss during synchronous FET commutation in buck converters. |
| EAS | 13 mJ unclamped avalanche energy - provides single-pulse ruggedness against inductive switching stress without external snubbers. |
| ID | 71 A continuous @ Tmb = 25 °C - supports high-current load switching with derating to 50 A at 100 °C mounting base. |
Pinout & Package
PSMN6R0-30YLB,115 uses the SOT669 (LFPAK; Power-SO8) plastic surface-mount package with exposed mounting base connected to drain. The 4-terminal layout optimizes thermal and electrical performance via low-inductance source paralleling and direct drain thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce source inductance and improve current sharing in high-dI/dt applications like synchronous buck. |
| 4 | Gate (G) | Single gate input with 1.62 Ω typical gate resistance - compatible with standard gate drivers without external series resistor for most 1–2 MHz designs. |
| Mounting Base (mb) | Drain (D) | Exposed copper pad electrically and thermally connected to drain - serves as primary heat sink interface and high-current drain return path. |
Key Features
| Feature | Design Value |
|---|---|
| NextPower Superjunction technology | Enables 6.5 mΩ RDS(on) at 30 V with 9 nC QG, achieving >95 % efficiency in 12 V → 3.3 V/20 A buck converters. |
| Logic-level gate drive (4.5 V) | Guarantees full enhancement at 4.5 V VGS, eliminating need for level shifters when driven by 5 V or 3.3 V MCUs. |
| 175 °C junction rating | Supports operation in sealed industrial enclosures or high-ambient environments without derating below 150 °C ambient. |
| Ultra-low QGD/QOSS | 2.6 nC QGD and 7.2 nC QOSS minimize Miller-induced shoot-through risk and enable faster switching transitions. |
Applications
| DC-DC Converters | Load Switching |
|---|---|
|
Use Scenario: Primary switch in isolated or non-isolated 12 V/24 V input DC-DC modules delivering up to 20 A at 3.3 V or 5 V. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz–1 MHz with fast turn-on/turn-off (td(on) = 16 ns, tf = 9 ns). Use Value: Low QG and RDS(on) reduce total power loss to <2.5 W at full load, enabling compact thermally constrained designs. |
Use Scenario: Hot-swap and inrush current control for 12 V/24 V board-level power domains in telecom line cards and PLC backplanes. IC Role / Device Role / Timing Role: Low-side load switch with integrated body diode used for controlled power-up sequencing and fault isolation. Use Value: 283 A peak pulsed current rating and 13 mJ avalanche energy withstand transient overloads without failure. |
| Synchronous Buck Regulators | Industrial Motor Drives |
|
Use Scenario: High-efficiency 48 V → 12 V intermediate bus converter in server PSUs and industrial power supplies. IC Role / Device Role / Timing Role: Low-side synchronous FET in multiphase buck topology, leveraging fast trr = 25.5 ns for minimal dead-time loss. Use Value: 278 pF Coss and 78 pF Crss reduce capacitive switching loss and EMI generation at 1 MHz operation. |
Use Scenario: Half-bridge leg in 24 V BLDC motor gate driver modules for factory automation actuators and HVAC blowers. IC Role / Device Role / Timing Role: Logic-level N-channel switch paired with complementary P-channel or high-side driver, operating at ≤20 kHz PWM. Use Value: 175 °C Tj rating and 2.35 K/W Rth(j-mb) ensure reliable operation under sustained 71 A conduction in enclosed motor control enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP040N04L | 40 mΩ RDS(on) @ 4.5 V, 40 V VDS, TO-252 package | Higher RDS(on) and larger thermal resistance (Rth(j-a) ≈ 60 K/W) limit use to ≤10 A continuous loads. | Select only if higher VDS margin is required and board space permits DPAK footprint. |
| Vishay SI7157DP | 5.8 mΩ RDS(on) @ 10 V, 30 V VDS, PowerPAK SO-8, QG = 12.5 nC @ 4.5 V | Higher gate charge increases driver loss and limits max switching frequency vs. PSMN6R0-30YLB's 9 nC. | Prefer for designs prioritizing lowest RDS(on) over switching efficiency at >500 kHz. |
Compared with IPP040N04L and SI7157DP, PSMN6R0-30YLB delivers superior gate-charge efficiency (9 nC) and thermal performance (2.35 K/W) in the same footprint, making it optimal for high-density, high-frequency industrial DC-DC and motor control where thermal headroom and driver simplicity are critical.
Availability
PSMN6R0-30YLB,115 is available at Aetrix Electronics and suitable for DC-DC converters, load switching, synchronous buck regulators, and industrial motor drives requiring stable component supply across production lifecycles.
Supply support for PSMN6R0-30YLB,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.
The PSMN6R0-30YLB,115 belongs to Nexperia's NextPower Superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density industrial and communications power conversion where low gate charge and thermal robustness are essential.
FAQ
What is the maximum continuous drain current for PSMN6R0-30YLB,115 at 100 °C mounting base temperature?
The maximum continuous drain current is 50 A at Tmb = 100 °C, per Figure 1 in the datasheet. This reflects thermal derating from the 71 A rating at 25 °C mounting base, maintaining safe junction temperature ≤175 °C with proper PCB copper area and airflow.
Can PSMN6R0-30YLB,115 be driven directly by a 3.3 V microcontroller GPIO?
No - while it is a logic-level MOSFET, its VGS(th) min is 1.05 V and typical RDS(on) requires ≥4.5 V for full enhancement. At 3.3 V, RDS(on) rises significantly (≥15 mΩ), increasing conduction loss; a dedicated 5 V gate driver or level shifter is recommended.
Is the mounting base of PSMN6R0-30YLB,115 electrically isolated from the drain terminal?
No - the mounting base (mb) is internally connected to the drain (D), as confirmed in Table 2 (Pinning information) and Figure 19 (Package outline). This requires careful PCB layout to avoid shorting the drain node to heatsinks or chassis unless intentional grounding is part of the system design.
What is the typical reverse recovery time (trr) of the integrated body diode?
The typical reverse recovery time is 25.5 ns, measured at IS = 20 A, dIS/dt = −100 A/µs, VDS = 15 V, and Tj = 25 °C (Table 6, Characteristics). This value enables efficient synchronous rectification in buck converters operating up to 1 MHz.
PSMN6R0-30YLB,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1088 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 58W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PSMN6R0-30YLB,115 FAQ
1.How can I place an order for PSMN6R0-30YLB,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN6R0-30YLB,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN6R0-30YLB,115 reliable?
The price and inventory of PSMN6R0-30YLB,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN6R0-30YLB,115 is usually 5 days.
3.What payment methods are accepted for PSMN6R0-30YLB,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN6R0-30YLB,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN6R0-30YLB,115?
PSMN6R0-30YLB,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN6R0-30YLB,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN6R0-30YLB,115?
For technical support, including PSMN6R0-30YLB,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN6R0-30YLB,115 requirements.
6.How does Aetrix verify that PSMN6R0-30YLB,115 is sourced from the original manufacturer or authorized distributors?
All PSMN6R0-30YLB,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN6R0-30YLB,115 meets industry standards.
7.What is the process for return or replacement of PSMN6R0-30YLB,115?
All PSMN6R0-30YLB,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN6R0-30YLB,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN6R0-30YLB,115 part is unused and in its original packaging.
Return procedure for PSMN6R0-30YLB,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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