Nexperia USA Inc. PSMN6R0-30YLDX

Overview

PSMN6R0-30YLD from Nexperia is an N-channel 30 V, 6.0 mΩ logic-level MOSFET in LFPAK56 (SOT669) package, optimized for 4.5 V gate drive and high-frequency synchronous rectification. It delivers R_DS(on) = 5.0 mΩ @ V_GS = 10 V, 15 A, T_j = 25 °C; Q_G(tot) = 6.5 nC @ V_GS = 4.5 V; and soft-recovery s-factor > 1.2 - enabling low EMI, high-efficiency DC-DC conversion in telecom POL modules.

For engineers reviewing the PSMN6R0-30YLD datasheet, PSMN6R0-30YLD pinout, PSMN6R0-30YLD application, or PSMN6R0-30YLD equivalent, key selection criteria include its 6.0 mΩ R_DS(on) at 4.5 V drive, SchottkyPlus diode performance with < 1 µA I_DSS at 25 °C, and LFPAK56's 3.22 K/W R_th(j-mb) for thermally demanding server power stages.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 architecture with "SchottkyPlus" technology - achieving Schottky-like reverse recovery (t_rr = 23.4 ns, Q_r = 12.6 nC) and softness factor S = 1.2 without elevated leakage. Its gate charge profile (Q_GD = 1.8 nC, Q_G(tot) = 6.5 nC @ 4.5 V) enables fast, low-loss switching up to multi-MHz frequencies.

The LFPAK56 package uses clip-bonded die attach and exposed mounting base connected to drain, delivering ultra-low parasitic inductance and R_th(j-mb) = 3.22 K/W. It is qualified to 175 °C junction temperature and wave-solderable with visual solder inspection capability.

Key Specifications

Pinout & Package

LFPAK56 (SOT669) is a 4-lead surface-mount plastic package with clip-bonded die, no wire bonds or adhesive. Mounting base (mb) is electrically connected to drain and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with PSMN2R0-30YLC and IPB120N04S4-02, PSMN6R0-30YLD uniquely balances 4.5 V logic compatibility, 6.0 mΩ R_DS(on), and 6.5 nC gate charge - making it optimal for space-constrained, high-frequency POL and telecom SR where gate drive voltage and EMI are constrained.

Availability

PSMN6R0-30YLD is available at Aetrix Electronics and suitable for server power delivery, telecom DC-DC conversion, and brushless motor control requiring stable component supply across production lifecycles.

Supply support for PSMN6R0-30YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors - high-volume, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and computing markets.

PSMN6R0-30YLD belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in data center and telecom infrastructure where low Q_G, soft recovery, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for PSMN6R0-30YLD at 100 °C mounting base temperature?

The datasheet specifies I_D = 46 A at T_mb = 100 °C and V_GS = 10 V (Figure 2). This derating reflects thermal limits of the LFPAK56 package and ensures safe operation within R_th(j-mb) = 3.22 K/W and T_j(max) = 175 °C constraints.

Does PSMN6R0-30YLD have avalanche ruggedness rating?

Yes - it is 100% tested for non-repetitive drain-source avalanche energy: E_AS = 46 mJ at V_GS = 10 V, T_j(init) = 25 °C, I_D = 15 A, V_sup ≤ 30 V, and R_GS = 50 Ω (Table 5, footnote [1]). This supports robustness in inductive switching applications.

Can PSMN6R0-30YLD be used with 3.3 V gate drive?

Yes - its V_GS(th) = 1.2–2.2 V (typ 1.83 V) and R_DS(on) = 13.8 mΩ @ V_GS = 4.5 V, 15 A, 150 °C (Table 7) confirm functional enhancement at 3.3 V, though R_DS(on) rises significantly; design validation at target current/temperature is recommended.

Is the mounting base electrically isolated from the drain terminal?

No - the mounting base (mb) is internally connected to the drain (D), as confirmed in Pinning Information (Table 2) and Package Outline (Figure 17). This requires proper PCB isolation of the thermal pad from other nets unless drain potential is referenced to ground or chassis.