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Nexperia USA Inc. PSMN6R1-25MLDX
- Part No.:
- PSMN6R1-25MLDX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SOT-1210, 8-LFPAK33 (5-Lead)
- Datasheet:
-
PSMN6R1-25MLDX.pdf
- Description:
- MOSFET N-CH 25V 60A LFPAK33
- Quantity:
- Payment:
- Shipping:
Inventory:1,443
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Product details
Overview
PSMN6R1-25MLDX from Nexperia is an N-channel logic-level MOSFET in LFPAK33 (SOT1210) package, rated for 25 V VDS, 6.46 mΩ RDS(on) @ 10 VGS/25 °C, and 60 A continuous drain current at Tmb = 25 °C. It employs NextPowerS3 "SchottkyPlus" technology to deliver soft-recovery diode behavior (s-factor > 1), ultra-low gate charge (QG(tot) = 5.6 nC), and optimized 4.5 V gate drive - enabling high-efficiency synchronous rectification in telecom POL modules.
For engineers reviewing the PSMN6R1-25MLDX datasheet, PSMN6R1-25MLDX pinout, PSMN6R1-25MLDX application, or PSMN6R1-25MLDX equivalent, key selection criteria include its 3.04 K/W junction-to-mounting-base thermal resistance, 1.76 V gate threshold voltage, 12 VDS switching performance with 7.9 ns rise time, and LFPAK33's exposed mounting base for thermal and solder inspection integrity.
Technical Context
This MOSFET uses a trench-gate silicon process with integrated Schottky-like body diode via Nexperia's "SchottkyPlus" architecture - achieving < 1 µA IDSS leakage at 25 °C while maintaining soft reverse recovery (trr = 19.3 ns, Qr = 8.1 nC). Its gate structure minimizes QGD (1.1 nC @ 4.5 VGS) and QOSS, directly supporting high-frequency DC/DC operation above 1 MHz.
The LFPAK33 package features clip-bonded die attach and solder-connected leads - eliminating wire bonds and adhesive - resulting in low parasitic inductance (< 1.5 nH) and resistance, plus qualification to 175 °C junction temperature. Mounting base (pin mb) is electrically connected to drain, enabling direct thermal path to PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum drain-source blocking voltage; defines use in ≤24 V bus systems like server VRMs and telecom POLs. |
| RDS(on) | 6.46 mΩ @ 10 VGS/25 °C - Low conduction loss enabling < 1 W dissipation at 40 A, critical for high-current point-of-load stages. |
| QG(tot) | 5.6 nC @ 10 VGS - Enables fast, low-loss switching with minimal gate driver power demand in high-frequency converters. |
| tr/tf | 7.9 ns / 4.7 ns @ VGS = 4.5 V - Supports clean edge transitions and reduced switching loss in hard-switched topologies. |
| Rth(j-mb) | 3.04 K/W - Thermal resistance from junction to mounting base; allows ≥35 W power handling with 100 °C ΔT to heatsink or copper plane. |
| s-factor | >1 - Soft reverse recovery of intrinsic diode reduces EMI and voltage overshoot during synchronous rectification commutation. |
| VGS(th) | 1.76 V typ - Logic-level threshold ensures full enhancement with standard 3.3 V or 4.5 V microcontroller GPIO or gate drivers. |
Pinout & Package
LFPAK33 (SOT1210) is a surface-mount, clip-bonded, lead-frame package with exposed mounting base (drain-connected), no wire bonds or die attach glue, qualified to 175 °C. Leads are fully exposed for visual solder inspection and low-inductance PCB connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 4 | Gate (G) | Single gate input with low RG (0.66 Ω) - minimizes gate ringing and supports stable 4.5 V drive without external series resistance. |
| mb | Mounting Base (D) | Drain-connected copper pad; serves as primary thermal path and high-current drain terminal - must be soldered to large PCB copper area. |
Key Features
| Feature | Design Value |
|---|---|
| NextPowerS3 "SchottkyPlus" diode | Soft reverse recovery (s-factor > 1) with < 1 µA leakage at 25 °C - eliminates trade-off between low loss and high leakage in Schottky alternatives. |
| Ultra-low QG and QGD | 5.6 nC total gate charge and 1.1 nC gate-drain charge - enables efficient 1–2 MHz switching with minimal driver loss and EMI. |
| Optimized for 4.5 V gate drive | RDS(on) = 8.98 mΩ @ 4.5 VGS/25 °C - ensures robust conduction using standard logic-level drivers without level-shifting. |
| Clip-bonded LFPAK33 construction | No wire bonds or adhesive - improves power cycling reliability and thermal stability up to 175 °C junction temperature. |
| Exposed mounting base | Drain-connected copper pad with 3.04 K/W Rth(j-mb) - enables direct thermal coupling to heatsink or internal PCB layers for high-power density designs. |
Applications
| Server On-Board DC/DC | Telecom Secondary-Side SR |
|---|---|
|
Use Scenario: High-density 12 V input → 1.8 V/60 A output converter on AI accelerator card. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 800 kHz with 4.5 V gate drive from controller IC. Use Value: 6.46 mΩ RDS(on) and 7.9 ns rise time minimize conduction + switching loss, enabling >94% efficiency at full load. |
Use Scenario: 48 V telecom rectifier delivering 12 V/40 A to baseband processing unit. IC Role / Device Role / Timing Role: Secondary-side MOSFET in active clamp forward topology, driven by transformer-coupled gate signal. Use Value: Soft-recovery s-factor > 1 suppresses voltage spikes during diode commutation, reducing snubber losses and EMI filter size. |
| GPU Voltage Regulator Module | Brushless Motor Control (BLDC) |
|
Use Scenario: Multi-phase VRM supplying dynamic V-core to discrete GPU under 300 W peak load. IC Role / Device Role / Timing Role: High-side and low-side switch in 3-phase buck stage, synchronized to 500 kHz PWM. Use Value: Low QGD (1.1 nC) and fast turn-off (7.8 ns td(off)) ensure precise dead-time control and reduced shoot-through risk. |
Use Scenario: 24 V, 15 A BLDC inverter for industrial fan with space-constrained PCB layout. IC Role / Device Role / Timing Role: Low-side phase switch in 3-phase bridge, driven by 3.3 V MCU with bootstrap gate driver. Use Value: 1.76 V VGS(th) guarantees reliable turn-on with 3.3 V logic, while LFPAK33's exposed leads simplify automated optical inspection (AOI). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PSMN2R0-25YLH | Lower RDS(on) (2.0 mΩ @ 10 VGS), higher QG (12.5 nC), same LFPAK56 package - larger footprint and higher gate drive demand. | Better for static efficiency-critical 48 V input VRMs; less suitable for >1 MHz switching due to higher QG. | Select when lowest conduction loss dominates over switching frequency and board area constraints. |
| DMTH6016LSD | 60 V rating, 11.5 mΩ RDS(on) @ 10 VGS, SO-8 package, higher Rth(j-a) (62 K/W) - inferior thermal performance and lower voltage margin. | Suitable for 36 V industrial motor drives but not for 25 V telecom POL where voltage headroom and thermal density matter. | Choose only if 60 V rating is required and LFPAK33 assembly capability is unavailable. |
Compared with PSMN2R0-25YLH and DMTH6016LSD, PSMN6R1-25MLDX uniquely balances low RDS(on), ultra-low QG, and compact LFPAK33 thermal design - making it optimal for space-constrained, high-frequency, 24 V-class synchronous rectifiers where both efficiency and EMI control are critical.
Availability
PSMN6R1-25MLDX is available at Aetrix Electronics and suitable for server on-board DC/DC, telecom secondary-side synchronous rectification, and GPU voltage regulator modules requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.
Supply support for PSMN6R1-25MLDX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors - high-volume, high-reliability devices for automotive, industrial, and computing applications.
This device belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and computing infrastructure - emphasizing low-loss switching, soft recovery, and thermally robust packaging.
FAQ
What is the maximum continuous drain current at 100 °C mounting base temperature?
Per Figure 2 in the datasheet, the continuous drain current is derated to 41 A at Tmb = 100 °C with VGS ≥ 10 V. This reflects thermal limitation rather than electrical saturation, and assumes proper PCB copper area for heat spreading per the recommended layout in Figure 6.
Does the mounting base (mb) require electrical isolation from the PCB ground plane?
No - the mounting base is internally connected to the drain terminal and must be soldered directly to a dedicated drain copper pour. Isolation would impede thermal performance and violate the package's thermal design intent; electrical isolation is only needed if the drain node is at a different potential than the PCB ground.
Can PSMN6R1-25MLDX be used with 3.3 V gate drive in production designs?
Yes - with VGS(th) = 1.2–2.2 V and RDS(on) = 17.51 mΩ @ 4.5 VGS/175 °C, it remains fully enhanced at 3.3 V under typical conditions. However, RDS(on) rises to ~22 mΩ at 3.3 V/25 °C, so thermal validation is required for high-current operation.
How does the "SchottkyPlus" body diode differ from a standard MOSFET body diode in practical layout?
The "SchottkyPlus" diode delivers soft reverse recovery (s-factor > 1) and low Qr (8.1 nC) without elevated leakage - allowing elimination of external Schottky catch diodes in synchronous rectifiers. Layout requires no special changes, but benefits from minimized source loop inductance to preserve softness during commutation.
PSMN6R1-25MLDX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1210, 8-LFPAK33 (5-Lead)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.24mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 702 pF @ 12 V
- FET Feature:
- Schottky Diode (Body)
- Power Dissipation (Max):
- 42W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK33
PSMN6R1-25MLDX FAQ
1.How can I place an order for PSMN6R1-25MLDX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN6R1-25MLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN6R1-25MLDX reliable?
The price and inventory of PSMN6R1-25MLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN6R1-25MLDX is usually 5 days.
3.What payment methods are accepted for PSMN6R1-25MLDX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN6R1-25MLDX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN6R1-25MLDX?
PSMN6R1-25MLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN6R1-25MLDX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN6R1-25MLDX?
For technical support, including PSMN6R1-25MLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN6R1-25MLDX requirements.
6.How does Aetrix verify that PSMN6R1-25MLDX is sourced from the original manufacturer or authorized distributors?
All PSMN6R1-25MLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN6R1-25MLDX meets industry standards.
7.What is the process for return or replacement of PSMN6R1-25MLDX?
All PSMN6R1-25MLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN6R1-25MLDX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN6R1-25MLDX part is unused and in its original packaging.
Return procedure for PSMN6R1-25MLDX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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