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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN6R1-30YLDX

Name: PSMN6R1-30YLDX
Brand: Nexperia USA Inc.
SKU: PSMN6R1-30YLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN6R1-30YLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN6R1-30YLDX.pdf

Description:: MOSFET N-CH 30V 66A LFPAK56

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Product details

Overview

PSMN6R1-30YLD from Nexperia is an N-channel 30 V logic-level MOSFET in LFPAK56 (SOT669) package, optimized for 4.5 V gate drive with R_DS(on) = 6.5 mΩ @ V_GS = 4.5 V, 15 A, T_j = 25 °C. It delivers ultra-low gate charge (Q_G(tot) = 6.8–10.2 nC), soft-recovery diode (s-factor > 1), and <1 µA leakage at 25 °C - enabling high-efficiency synchronous rectification in telecom POL modules.

For engineers reviewing the PSMN6R1-30YLD datasheet, PSMN6R1-30YLD pinout, PSMN6R1-30YLD application, or PSMN6R1-30YLD equivalent, this page provides verified electrical specs, thermal performance (R_th(j-mb) = 3 K/W), LFPAK56 mounting base configuration, and validated alternatives for server DC-DC and VRM designs.

Technical Context

This MOSFET uses Nexperia's NextPowerS3 technology with "SchottkyPlus" body diode architecture, achieving Schottky-like low reverse recovery charge (Q_r = 12.6–25.2 nC) and softness factor ≥1.3 while maintaining leakage <1 µA at 25 °C - eliminating trade-offs between EMI and diode leakage common in integrated-Schottky devices.

Its LFPAK56 Power-SO8 package features clip-bonded die attach and exposed mounting base connected to drain, delivering low parasitic inductance/resistance and 175 °C junction rating. Gate threshold voltage is 1.2–2.2 V, enabling robust turn-on at 4.5 V with minimal Miller plateau (V_GS(pl) = 2.7 V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - supports 24 V input rail systems with margin for transients in telecom/server power supplies.
R_DS(on)	6.5 mΩ @ 4.5 V, 15 A, 25 °C - enables <1 W conduction loss at 40 A in parallel configurations for high-current POL stages.
Q_G(tot)	6.8–10.2 nC @ 4.5 V - reduces gate drive power and switching losses in 500 kHz–1 MHz VRM applications.
Q_GD	2.1–3.15 nC @ 4.5 V - minimizes Miller-induced shoot-through risk during hard-switching in synchronous buck converters.
R_th(j-mb)	3 K/W - allows 47 W total dissipation at 25 °C mounting base temperature, supporting high-power density without heatsinks.
s-factor	>1 - ensures soft reverse recovery, reducing voltage spikes and EMI in secondary-side rectification circuits.
I_D	66 A continuous @ T_mb = 25 °C - supports high peak current demands in GPU/V-core power delivery with derating.

Pinout & Package

LFPAK56 (SOT669) is a clip-bonded, wave-solderable surface-mount package with exposed mounting base (drain-connected) and no wire bonds or die attach glue. It achieves 175 °C qualification and low-inductance layout via direct copper-to-die thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
4	Gate	Single gate input with low RG (0.44–0.88 Ω) - compatible with standard gate drivers without external series resistance.
Mounting Base (mb)	Drain	Exposed copper pad electrically and thermally connected to drain - serves as primary heat path and high-current return node.

Key Features

Feature	Design Value
"SchottkyPlus" body diode	Q_r = 12.6–25.2 nC and s-factor ≥1.3 with leakage <1 µA @ 25 °C - eliminates need for external Schottky in cost-sensitive POL designs.
Ultra-low Q_G, Q_GD, Q_OSS	Q_G(tot) = 6.8–10.2 nC, Q_GD = 2.1–3.15 nC, Q_OSS = 11.8 nC - enables >1 MHz operation with <5% gate drive loss in 12 V input VRMs.
Optimized for 4.5 V drive	V_GS(th) = 1.2–2.2 V and R_DS(on) = 6.5 mΩ @ 4.5 V - ensures full enhancement with standard logic-level controllers like TI UCC28950 or ON Semi NCP4306.
High-reliability construction	Clip-bonded die, solder die attach, no wire bonds or epoxy - qualified to 175 °C junction and 260 °C peak soldering temperature per JEDEC J-STD-020.

Applications

Server On-Board DC-DC

Telecom Secondary-Side SR

Use Scenario: Point-of-load conversion from 12 V intermediate bus to 1.8 V/60 A for ASICs in cloud servers.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck converter, operating at 600 kHz with 4.5 V gate drive.

Use Value: 6.5 mΩ R_DS(on) and 3 K/W thermal resistance enable >95% efficiency at full load without forced air cooling.

Use Scenario: Secondary-side synchronous rectification in 48 V–12 V isolated DC-DC for 5G base station power supplies.

IC Role / Device Role / Timing Role: Low-voltage-side switch replacing Schottky diodes in active clamp forward topology.

Use Value: Soft-recovery (s-factor >1) and low Q_r reduce output voltage overshoot and EMI filter size by 30% vs. standard MOSFETs.

GPU/V-Core VRM

Brushless Motor Control

Use Scenario: High-current power stage for discrete GPU core voltage regulation (0.8–1.2 V, up to 300 A).

IC Role / Device Role / Timing Role: High-side and low-side switch in dual-phase interleaved buck with 1 MHz switching frequency.

Use Value: Ultra-low Q_GD (2.1–3.15 nC) suppresses Miller-induced false turn-on, enabling reliable operation with 5 V gate drivers.

Use Scenario: Inverter leg in 24 V BLDC motor driver for industrial automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element in 3-phase bridge, driven by gate driver with 4.5 V output.

Use Value: 66 A continuous current rating and 263 A pulsed capability support 5× overload peaks without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	R_DS(on) = 1.4 mΩ @ 4.5 V but 40 V V_DS; Q_G(tot) = 12.5 nC - higher conduction loss margin but larger gate drive demand.	Higher voltage rating suits 36 V industrial rails; less optimal for 24 V telecom due to over-spec'd V_DS.	Choose when 40 V rating and lower R_DS(on) outweigh gate charge penalty in lower-frequency (<500 kHz) designs.
Vishay SiR626DP	R_DS(on) = 5.8 mΩ @ 4.5 V, same 30 V rating; Q_G(tot) = 10.5 nC; no specified s-factor or SchottkyPlus diode.	Lacks soft-recovery diode - requires external snubbers in high-di/dt synchronous rectification.	Prefer where lowest R_DS(on) is critical and diode performance is managed externally or not required.

Compared with PSMN6R1-30YLD, BSC014N04LS6 trades higher gate charge for lower on-resistance and wider voltage margin, while SiR626DP offers marginally lower R_DS(on) but lacks verified soft-recovery - making PSMN6R1-30YLD optimal for EMI-sensitive, high-frequency telecom POL where diode behavior is integral.

Availability

PSMN6R1-30YLD is available at Aetrix Electronics and suitable for server on-board DC-DC, telecom secondary-side synchronous rectification, and GPU/V-core VRM applications requiring stable component supply across multi-year production cycles.

Supply support for PSMN6R1-30YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

This device belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and computing infrastructure where low EMI and thermal robustness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C mounting base temperature?

The PSMN6R1-30YLD supports 46 A continuous drain current at T_mb = 100 °C, as specified in Table 5 (Limiting Values). This derating reflects thermal constraints of the LFPAK56 package and ensures safe operation within its 175 °C junction limit under sustained load conditions.

Does this MOSFET require a gate resistor for stability in 1 MHz switching applications?

No external gate resistor is required for stability: the device has intrinsic gate resistance of 0.44–0.88 Ω and ultra-low Q_GD (2.1–3.15 nC), enabling clean turn-on/turn-off with standard 5 V gate drivers. However, a 2–5 Ω series resistor is recommended to dampen ringing in layouts with long gate traces.

Is the mounting base electrically isolated from other terminals?

No - the mounting base is internally connected to the drain terminal, as confirmed in Pinning Information (Table 2) and Package Outline (Fig. 17). It must be routed to the high-side DC node or heatsink with appropriate insulation if thermal sinking to chassis ground is required.

How does the "SchottkyPlus" diode compare to a discrete Schottky in reverse recovery performance?

The "SchottkyPlus" diode achieves Q_r = 12.6–25.2 nC and trr = 23.8–47.6 ns - matching discrete Schottky performance - while maintaining leakage <1 µA at 25 °C, unlike conventional Schottky diodes which typically exceed 100 µA at same voltage and temperature.

PSMN6R1-30YLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 66A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 13.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 817 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN6R1-30YLDX FAQ

1.How can I place an order for PSMN6R1-30YLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN6R1-30YLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN6R1-30YLDX reliable?

The price and inventory of PSMN6R1-30YLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN6R1-30YLDX is usually 5 days.

3.What payment methods are accepted for PSMN6R1-30YLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN6R1-30YLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN6R1-30YLDX?

PSMN6R1-30YLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN6R1-30YLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN6R1-30YLDX?

For technical support, including PSMN6R1-30YLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN6R1-30YLDX requirements.

6.How does Aetrix verify that PSMN6R1-30YLDX is sourced from the original manufacturer or authorized distributors?

All PSMN6R1-30YLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN6R1-30YLDX meets industry standards.

7.What is the process for return or replacement of PSMN6R1-30YLDX?

All PSMN6R1-30YLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN6R1-30YLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN6R1-30YLDX part is unused and in its original packaging.

Return procedure for PSMN6R1-30YLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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