Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN6R3-120ESQ

Name: PSMN6R3-120ESQ
Brand: Nexperia USA Inc.
SKU: PSMN6R3-120ESQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PSMN6R3-120ESQ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: PSMN6R3-120ESQ.pdf

Description:: MOSFET N-CH 120V 70A I2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,354

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PSMN6R3-120ES from Nexperia is a standard-level N-channel MOSFET in I2PAK (SOT226) package, rated for 120 V drain-source voltage, 6.7 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It serves as a primary switching device in high-efficiency AC-DC power supplies and synchronous rectifiers where low conduction loss and robust avalanche capability are critical.

For engineers reviewing the PSMN6R3-120ES datasheet, PSMN6R3-120ES pinout, PSMN6R3-120ES application, or PSMN6R3-120ES equivalent, key selection criteria include its 405 W total power dissipation at T_mb = 25 °C, 532 mJ unclamped avalanche energy, and compatibility with standard 10 V gate drive - essential for industrial power supply and slimline adapter designs.

Technical Context

This MOSFET employs a planar silicon process optimized for ruggedness and thermal stability, supporting continuous operation up to 175 °C junction temperature. Its dynamic characteristics include 207.1 nC total gate charge and 61.9 nC gate-drain charge, enabling predictable switching behavior in hard-switched topologies.

The device features an integrated body diode with 76.1 ns reverse recovery time and 264.2 nC recovered charge, making it suitable for synchronous rectification without external Schottky replacement in medium-frequency SMPS. Thermal resistance from junction to mounting base is 0.3 K/W typical, facilitating direct heatsink mounting in space-constrained adapters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V maximum - supports full-range universal input (85–265 VAC) front-end designs with margin.
R_DS(on)	6.7 mΩ at V_GS = 10 V, T_j = 25 °C - enables <1.7 W conduction loss at 50 A DC, critical for high-current output rails.
I_D	70 A continuous at T_mb = 25 °C - delivers high current density in compact I2PAK footprint without forced air.
E_AS	532 mJ non-repetitive avalanche energy - withstands transient overvoltage events in flyback and LLC resonant converters.
Q_G(tot)	207.1 nC - determines gate driver power requirement and switching speed trade-off in 65–100 kHz SMPS.
R_th(j-mb)	0.3 K/W typical - allows direct thermal coupling to heatsink, achieving ≤100 °C junction rise at 200 W dissipation.
C_iss	11384 pF - impacts gate drive loop stability and EMI filter design in high-frequency switching applications.

Pinout & Package

I2PAK (SOT226) plastic single-ended package with isolated mounting base; 3-pin configuration optimized for low-profile, height-constrained power adapters and chargers.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Standard-level control input requiring ≥10 V for full enhancement; compatible with common PWM controllers.
2 (D)	Drain	Main high-side switching node; electrically connected to mounting base - requires insulating pad when heatsink grounded.
3 (S)	Source	Power return path and reference for gate drive; also serves as cathode of integrated body diode.

Key Features

Feature	Design Value
High-efficiency switching	Low 6.7 mΩ R_DS(on) and 207.1 nC Q_G(tot) jointly reduce combined conduction + switching losses in 65–100 kHz AC-DC converters.
Enhanced avalanche ruggedness	532 mJ E_AS rating ensures reliable operation during output short-circuit or transformer saturation events without derating.
Standard-level gate drive	Threshold voltage range 2–4 V and plateau voltage ~4.3 V enable use with industry-standard 10 V gate drivers, eliminating level-shifting circuitry.
I2PAK thermal performance	0.3 K/W R_th(j-mb) enables >300 W power handling with passive heatsinking - ideal for slimline 65 W+ USB-C PD adapters.

Applications

AC-to-DC Power Supply

Synchronous Rectification

Use Scenario: Primary-side switch in 65–100 W universal-input flyback converters for laptop adapters and industrial power modules.

IC Role / Device Role / Timing Role: High-voltage N-channel switching transistor operating at 65–100 kHz with zero-voltage switching assist.

Use Value: 120 V rating and 532 mJ avalanche energy prevent failure during line surges and no-load transients.

Use Scenario: Secondary-side synchronous rectifier in 45–90 W LLC resonant converters for server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: Low-R_DS(on) replacement for Schottky diodes, driven by transformer-coupled gate signals.

Use Value: 6.7 mΩ on-resistance reduces forward conduction loss by >40% vs. 40 V Schottky, improving efficiency by 0.8–1.2% at full load.

Motor Control

Slimeline Adaptors & Chargers

Use Scenario: Half-bridge high-side switch in 24–48 V BLDC motor drives for power tools and e-bikes.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET controlled via bootstrap gate driver with 142 ns turn-off delay.

Use Value: 70 A continuous current and 280 A pulsed rating support peak torque delivery without thermal throttling.

Use Scenario: Primary switch in ultra-thin 65 W USB-C PD wall adapters under 20 mm height constraint.

IC Role / Device Role / Timing Role: Compact I2PAK package enables direct PCB-mount heatsinking with minimal Z-height overhead.

Use Value: 0.3 K/W thermal resistance allows 405 W dissipation at T_mb = 25 °C - enabling >94% efficiency in 15 mm profile designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 120 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK120Z	120 V, 10 Ω R_DS(on), 100 A ID, TO-247 package, Zener-protected gate	Higher R_DS(on) increases conduction loss; larger TO-247 requires more board area and thermal mass	Preferred where gate robustness against dv/dt-induced overstress is prioritized over size and efficiency.
IRFP4668PBF	120 V, 5.2 mΩ R_DS(on), 100 A ID, TO-247 package, enhanced body diode Q_r	Lower R_DS(on) improves efficiency but higher Q_G (240 nC) demands stronger gate driver	Selected when maximum efficiency at high current (>60 A) outweighs gate drive complexity and board space.

Compared with STP10NK120Z and IRFP4668PBF, PSMN6R3-120ES offers optimal balance of low R_DS(on), compact I2PAK footprint, and proven avalanche reliability - making it preferred for height-sensitive, high-volume AC-DC adapters where thermal management and surge immunity are co-critical.

Availability

PSMN6R3-120ES is available at Aetrix Electronics and suitable for AC-to-DC power supplies, synchronous rectifiers, and slimline adaptors requiring stable component supply across multi-year production cycles.

Supply support for PSMN6R3-120ES includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This device belongs to Nexperia's standard-level Power MOSFET product line, engineered specifically for cost-sensitive, thermally demanding industrial and consumer power conversion applications where ruggedness and manufacturability are paramount.

FAQ

Is PSMN6R3-120ES suitable for automotive applications?

No. This part is not AEC-Q101 qualified and lacks automotive-specific validation per Nexperia's legal disclaimers. It is explicitly designated for industrial, communications, and domestic power supply equipment - not safety-critical or automotive systems.

What is the maximum gate-source voltage rating?

The absolute maximum V_GS is ±20 V, with recommended operating range of -10 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage, and sustained operation above +15 V accelerates threshold voltage shift over lifetime.

How does the I2PAK package affect thermal design?

The I2PAK (SOT226) exposes the drain to the mounting base, enabling direct thermal interface to heatsinks. With R_th(j-mb) = 0.3 K/W typical, thermal design must isolate the base if the heatsink is grounded, using ceramic or silicone pads rated for ≥2 kV isolation.

Can PSMN6R3-120ES replace a 100 V MOSFET in existing designs?

Yes - its 120 V V_DS provides 20% higher voltage margin than 100 V parts, improving surge immunity in universal-input AC-DC designs. However, verify gate drive timing and layout parasitics, as higher Q_G may increase switching losses in high-frequency operation.

PSMN6R3-120ESQ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 207.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11384 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 405W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

PSMN6R3-120ESQ FAQ

1.How can I place an order for PSMN6R3-120ESQ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN6R3-120ESQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN6R3-120ESQ reliable?

The price and inventory of PSMN6R3-120ESQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN6R3-120ESQ is usually 5 days.

3.What payment methods are accepted for PSMN6R3-120ESQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN6R3-120ESQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN6R3-120ESQ?

PSMN6R3-120ESQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN6R3-120ESQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN6R3-120ESQ?

For technical support, including PSMN6R3-120ESQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN6R3-120ESQ requirements.

6.How does Aetrix verify that PSMN6R3-120ESQ is sourced from the original manufacturer or authorized distributors?

All PSMN6R3-120ESQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN6R3-120ESQ meets industry standards.

7.What is the process for return or replacement of PSMN6R3-120ESQ?

All PSMN6R3-120ESQ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN6R3-120ESQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN6R3-120ESQ part is unused and in its original packaging.

Return procedure for PSMN6R3-120ESQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…