Nexperia USA Inc. PSMN6R3-120PS

Overview

PSMN6R3-120PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 120 V drain-source voltage, 6.7 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 70 A continuous drain current at T_mb = 25 °C and supports high-efficiency power conversion in industrial AC-DC supplies.

For engineers reviewing the PSMN6R3-120PS datasheet, PSMN6R3-120PS pinout, PSMN6R3-120PS application, or PSMN6R3-120PS equivalent, key selection criteria include its 6.7 mΩ conduction resistance, 207.1 nC total gate charge, 532 mJ unclamped avalanche energy, and TO-220 thermal performance with R_th(j-mb) = 0.3 K/W - critical for heatsink-mounted high-power switching designs.

Technical Context

This MOSFET employs planar silicon technology optimized for standard-level gate drive (V_GS = 10 V), enabling direct compatibility with common 12 V logic and PWM controllers without level-shifting. Its design emphasizes robust dynamic avalanche ruggedness and low Q_GD/Q_G(tot) ratio (61.9/207.1 nC) to support fast, controlled switching in hard-switched topologies.

The device integrates a monolithic source-drain diode with 76.1 ns reverse recovery time and 264.2 nC recovered charge, supporting synchronous rectification and freewheeling functions. Thermal design is anchored to the mounting base (not ambient), with R_th(j-mb) = 0.3 K/W enabling high-power dissipation when mechanically attached to a heatsink.

Key Specifications

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink mounting capability via one central hole; 3-lead configuration with drain tab electrically connected to lead 2 and mounting base.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 120 V MOSFET applications.

Compared with STP10NK120ZFP, PSMN6R3-120PS offers 7× higher current and 75× lower R_DS(on); versus IRFP4668PBF, it trades 1.5 mΩ lower R_DS(on) for 43 nC less gate charge and TO-220 mechanical simplicity - making it optimal for thermally constrained 300–500 W designs requiring ruggedness and ease of heatsink integration.

Availability

PSMN6R3-120PS is available at Aetrix Electronics and suitable for AC-to-DC power supply, synchronous rectification, and motor control applications requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for PSMN6R3-120PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with manufacturing rooted in process consistency and automotive-grade quality systems.

This device belongs to Nexperia's standard-level TrenchMOS portfolio, engineered specifically for industrial power conversion where robustness, thermal stability, and gate-drive simplicity outweigh ultra-low R_DS(on) or advanced packaging.

FAQ

Is PSMN6R3-120PS suitable for high-frequency switching above 500 kHz?

No - its 207.1 nC total gate charge and 61.9 nC gate-drain charge result in significant switching losses above 300 kHz. Measured turn-on delay (42.1 ns) and fall time (67.7 ns) indicate optimal operation in 100–300 kHz hard-switched converters like forward or half-bridge topologies, not RF or resonant applications requiring sub-50 ns transitions.

Can PSMN6R3-120PS be used in avalanche mode repeatedly?

No - the 532 mJ E_AS rating applies only to non-repetitive, unclamped inductive switching events. The datasheet specifies no repetitive avalanche capability, and repeated operation in this region accelerates parametric drift and eventual failure. Use clamping circuits or snubbers for sustained inductive energy absorption.

What is the maximum PCB copper area required for thermal performance without a heatsink?

Without a heatsink, the device relies on R_th(j-a) = 60 K/W, limiting usable power to ~6.75 W at ΔT = 405 °C rise - impractical for rated operation. The TO-220AB package requires mechanical attachment to a heatsink; minimum recommended copper pour is 10 cm² per 1 W with 2 oz copper, but effective thermal management mandates external heatsinking per Figure 2 and Figure 5.

Does the source-drain diode support continuous bidirectional current in H-bridge configurations?

Yes - the integrated body diode supports 70 A continuous source current (I_S) and 280 A pulsed (I_SM) at T_mb = 25 °C, with 76.1 ns reverse recovery time and 264.2 nC recovered charge. However, its 1.2 V max forward voltage at 25 A increases conduction loss versus external Schottky diodes, so H-bridge freewheeling should be evaluated for thermal impact at high duty cycles.