Nexperia USA Inc. PSMN6R4-30MLDX

Overview

PSMN6R4-30MLDX from Nexperia is a logic-level N-channel MOSFET in LFPAK33 (SOT1210) package, rated 30 V V_DS, 6.4 mΩ R_DS(on) @ V_GS = 4.5 V, 15 A, and optimized for high-frequency synchronous rectification and POL DC-DC conversion in telecom and server power supplies.

For engineers reviewing the PSMN6R4-30MLDX datasheet, PSMN6R4-30MLDX pinout, PSMN6R4-30MLDX application, or PSMN6R4-30MLDX equivalent, key selection criteria include low Q_G/Q_GD, SchottkyPlus body diode performance with <1 µA I_DSS at 25 °C, 4.5 V gate drive compatibility, and mounting-base thermal resistance of 2.72 K/W.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 technology with "SchottkyPlus" body diode architecture-enabling soft-recovery (s-factor >1), low EMI spiking, and reduced reverse recovery charge (Q_r = 12.6 nC) without sacrificing leakage (<1 µA at 25 °C). It operates reliably up to T_j = 175 °C with clip-bonded die and solder die attach.

The device delivers ultra-low gate charge (Q_G(tot) = 12.2 nC @ 10 V; Q_GD = 1.8–3 nC @ 4.5 V), fast switching (t_r = 16.2 ns, t_f = 10.9 ns), and stable R_DS(on) across temperature (13.7 mΩ max @ 150 °C, V_GS = 4.5 V).

Key Specifications

Pinout & Package

LFPAK33 (SOT1210) is a clip-bonded, lead-frame package with exposed mounting base (drain-connected), no wire bonds or die attach glue, qualified to 175 °C junction temperature and featuring visual solder inspection capability on all eight leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with BSC014N04LS6 and SiR626DP, PSMN6R4-30MLDX uniquely balances 4.5 V logic compatibility, ultra-low Q_GD, and SchottkyPlus soft recovery-making it optimal for high-density, high-frequency POL and telecom SR where gate drive simplicity, EMI control, and thermal efficiency are co-constrained.

Availability

PSMN6R4-30MLDX is available at Aetrix Electronics and suitable for server DC-DC conversion, telecom secondary-side synchronous rectification, and VRM power delivery requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PSMN6R4-30MLDX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

The NextPowerS3 product line was engineered specifically for high-efficiency, high-frequency power conversion-delivering Schottky-like diode performance without leakage trade-offs, targeting server, telecom, and computing power applications.

FAQ

What is the maximum continuous drain current for PSMN6R4-30MLDX at 100 °C mounting base temperature?

The datasheet specifies 47 A continuous drain current at T_mb = 100 °C and V_GS = 10 V (Figure 2). This reflects thermal derating due to reduced heat dissipation capacity at elevated board temperatures, and must be used in conjunction with R_th(j-mb) = 2.72 K/W to calculate actual junction temperature rise.

Does PSMN6R4-30MLDX have an integrated Schottky diode?

No-it uses Nexperia's "SchottkyPlus" technology, which provides Schottky-like soft reverse recovery (trr = 23.4 ns, Qr = 12.6 nC, s-factor >1) and low forward voltage (V_SD = 0.8–1.2 V) without an actual integrated Schottky junction. Leakage remains <1 µA at 25 °C, unlike true Schottky diodes.

Can PSMN6R4-30MLDX be driven directly from a 3.3 V microcontroller GPIO?

Yes-its gate threshold voltage range is 1.2–2.2 V, and R_DS(on) is fully specified down to V_GS = 4.5 V. While 3.3 V is below the 4.5 V test condition, typical V_GS(th) = 1.7 V ensures reliable turn-on; however, R_DS(on) will increase to ~10–12 mΩ, requiring verification against target conduction loss.

What is the significance of the mounting base (mb) being connected to drain?

The mounting base is electrically tied to the drain terminal and serves as the primary thermal interface. This configuration simplifies PCB layout by enabling direct thermal coupling to ground planes or heatsinks, but requires isolation of the drain net from other potentials-especially critical in high-side switch configurations where mb cannot be grounded.