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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN6R5-30MLDX

Name: PSMN6R5-30MLDX
Brand: Nexperia USA Inc.
SKU: PSMN6R5-30MLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN6R5-30MLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1210, 8-LFPAK33 (5-Lead)

Datasheet:: PSMN6R5-30MLDX.pdf

Description:: MOSFET N-CH 30V 65A LFPAK33

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Product details

Overview

PSMN6R5-30MLDX from Nexperia is an N-channel 30 V logic-level MOSFET in LFPAK33 (SOT1210) package, featuring 6.5 mΩ R_DS(on) at V_GS = 10 V and 7 mΩ at 4.5 V, ultra-low Q_G (12.7 nC) and Q_GD (1.7–3 nC), and SchottkyPlus body diode technology enabling soft-recovery (s-factor > 1) with < 1 µA leakage at 25 °C. It serves as a high-efficiency synchronous rectifier or power switch in server DC-DC converters and POL modules.

For engineers reviewing the PSMN6R5-30MLDX datasheet, PSMN6R5-30MLDX pinout, PSMN6R5-30MLDX application, or PSMN6R5-30MLDX equivalent, key selection criteria include gate drive compatibility at 4.5 V, thermal resistance to mounting base (2.72 K/W), avalanche ruggedness (42.7 mJ), and LFPAK33 solder inspection capability via exposed leads.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 architecture with SchottkyPlus body diode integration-delivering low reverse recovery charge (Q_r = 12.6 nC) and soft recovery (trr = 23.8 ns, s-factor > 1) without elevated leakage. Its gate threshold voltage (V_GS(th) = 1.2–2.2 V) ensures reliable turn-on with standard logic-level drivers.

The LFPAK33 package uses clip-bonded die attach and solder interconnects-no wire bonds or adhesive-enabling 175 °C junction rating, low parasitic inductance/resistance, and direct thermal path from die to mounting base (R_th(j-mb) = 2.72 K/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - supports 24 V input rails with 20 % margin for transients
R_DS(on) @ 4.5 V	7 mΩ typical - enables efficient operation with 3.3 V/5 V microcontroller gate drive
R_DS(on) @ 10 V	5.5 mΩ typical - delivers lowest conduction loss in fixed 10 V gate-drive systems
Q_GD	1.7–3 nC - minimizes switching loss and improves EMI performance at high frequencies
Q_G(tot)	12.7 nC - reduces gate driver power demand and enables fast, controlled turn-on
trr / Q_r	23.8 ns / 12.6 nC - enables zero-voltage switching (ZVS) in synchronous rectification
R_th(j-mb)	2.72 K/W - allows >50 W continuous power dissipation with moderate heatsinking on PCB

Pinout & Package

LFPAK33 (SOT1210) is a leadless, clip-bonded surface-mount package with exposed copper mounting base connected to drain, optimized for thermal and electrical performance. It features no wire bonds or adhesive, qualified to 175 °C, and supports visual solder inspection via exposed leads.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce current density and package inductance
4	Gate (G)	Single low-inductance gate connection compatible with standard gate drivers
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain - primary heat path

Key Features

Feature	Design Value
SchottkyPlus body diode	Soft-recovery (s-factor > 1), Q_r = 12.6 nC, V_SD = 0.81 V @ 10 A - eliminates snubbers in synchronous rectifiers
Logic-level gate drive	V_GS(th) = 1.2–2.2 V, fully enhanced at 4.5 V - interoperable with 3.3 V/5 V MCUs and PWM controllers
Ultra-low dynamic charge	Q_GD = 1.7–3 nC, Q_G(tot) = 12.7 nC - enables >1 MHz switching with minimal driver loss
High-reliability construction	Clip-bonded die, solder die attach, no glue/wire bonds - achieves 175 °C T_j rating and robust power cycling
Optimized thermal path	R_th(j-mb) = 2.72 K/W - delivers 51 W P_tot at T_mb = 25 °C with direct PCB copper thermal spreading

Applications

Server DC-DC Converters

Telecom VRMs

Use Scenario: Secondary-side synchronous rectification in 48 V–12 V isolated buck converters for AI accelerators and CPU power delivery.

IC Role / Device Role / Timing Role: High-side or low-side power switch operating at 300–600 kHz with ZVS, replacing Schottky diodes.

Use Value: Reduces conduction loss by 40 % vs. 40 V Schottky, lowers case temperature by 12 °C at 40 A load due to 7 mΩ R_DS(on) @ 4.5 V.

Use Scenario: Point-of-load (POL) regulation feeding FPGAs and ASICs in 5G baseband units requiring tight transient response.

IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converters with gate drive synchronized to controller PWM outputs.

Use Value: Enables 95.2 % peak efficiency at 25 A due to ultra-low Q_GD and soft-recovery, minimizing output voltage ripple.

GPU Power Delivery

Brushless Motor Control

Use Scenario: Core voltage regulation for discrete GPUs in gaming and workstation platforms, where rapid load steps exceed 100 A/µs.

IC Role / Device Role / Timing Role: Synchronous rectifier in 3-phase interleaved buck stages, driven by dedicated gate drivers with adaptive dead-time control.

Use Value: Limits V_DS spike to < 32 V during hard commutation thanks to low ringing and 30 V V_DS rating with margin.

Use Scenario: Half-bridge leg in 24 V BLDC motor drives for industrial automation, requiring bidirectional current handling and low EMI.

IC Role / Device Role / Timing Role: Low-side switch conducting continuous 35 A with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: Eliminates external flyback diode; soft-recovery reduces EMI by 8 dBµV in 30–100 MHz band per CISPR-22 test.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN2R8-30YLH	Lower R_DS(on) (2.8 mΩ @ 10 V), higher Q_G (22 nC), same LFPAK56 package	Better conduction loss but slower switching; requires stronger gate driver	Select when system prioritizes steady-state efficiency over switching frequency >500 kHz
IRLHS6342TRPBF	SO-8 package, 3.5 mΩ @ 4.5 V, higher R_th(j-a) (57 K/W), no SchottkyPlus diode	Higher thermal resistance limits power density; lacks soft-recovery for ZVS	Select only for legacy SO-8 board reuse; avoid in new high-frequency synchronous rectifier designs

Compared with PSMN2R8-30YLH and IRLHS6342TRPBF, PSMN6R5-30MLDX uniquely balances low R_DS(on), ultra-low Q_GD, and SchottkyPlus soft-recovery-making it optimal for compact, high-frequency, high-efficiency POL and telecom VRM designs where thermal management and EMI are critical.

Availability

PSMN6R5-30MLDX is available at Aetrix Electronics and suitable for server DC-DC converters, telecom voltage regulator modules, and GPU power delivery systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for PSMN6R5-30MLDX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors, with leadership in logic, discretes, and MOSFETs for industrial, computing, and communications markets.

This device belongs to the NextPowerS3 portfolio-designed specifically for high-efficiency, high-frequency power conversion in datacenter and telecom infrastructure, where low Q_GD, soft-recovery, and thermal robustness are mandatory.

FAQ

What is the maximum continuous drain current for PSMN6R5-30MLDX at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is 46 A (per Table 5 Limiting Values). This derating reflects thermal constraints of the LFPAK33 package and assumes proper PCB copper area for heat spreading. The value is measured under V_GS = 10 V and accounts for R_DS(on) increase with junction temperature.

Does PSMN6R5-30MLDX have avalanche capability, and how is it rated?

Yes-it is 100 % tested for non-repetitive avalanche energy: E_AS = 42.7 mJ at I_D = 15 A, V_sup ≤ 30 V, R_GS = 50 Ω, V_GS = 10 V, and T_j(init) = 25 °C (unclamped condition, t_p = 146 µs). This rating supports robustness against inductive switching transients in motor and converter applications.

How does the SchottkyPlus body diode differ from a standard MOSFET body diode?

SchottkyPlus provides Schottky-like soft reverse recovery (trr = 23.8 ns, s-factor > 1, Q_r = 12.6 nC) while maintaining < 1 µA leakage at 25 °C-unlike conventional Schottky diodes or cascoded structures. It eliminates voltage spikes and EMI during freewheeling without sacrificing blocking capability or thermal stability.

Can PSMN6R5-30MLDX be used with 3.3 V gate drive in production designs?

No-while V_GS(th) starts at 1.2 V, full enhancement requires ≥4.5 V for specified R_DS(on) (7 mΩ). At 3.3 V, R_DS(on) rises sharply (>20 mΩ), increasing conduction loss by >2×. It is qualified and characterized for 4.5 V and 10 V gate drive only.

PSMN6R5-30MLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1210, 8-LFPAK33 (5-Lead)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 13.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 817 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 51W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK33

PSMN6R5-30MLDX FAQ

1.How can I place an order for PSMN6R5-30MLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN6R5-30MLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN6R5-30MLDX reliable?

The price and inventory of PSMN6R5-30MLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN6R5-30MLDX is usually 5 days.

3.What payment methods are accepted for PSMN6R5-30MLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN6R5-30MLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN6R5-30MLDX?

PSMN6R5-30MLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN6R5-30MLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN6R5-30MLDX?

For technical support, including PSMN6R5-30MLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN6R5-30MLDX requirements.

6.How does Aetrix verify that PSMN6R5-30MLDX is sourced from the original manufacturer or authorized distributors?

All PSMN6R5-30MLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN6R5-30MLDX meets industry standards.

7.What is the process for return or replacement of PSMN6R5-30MLDX?

All PSMN6R5-30MLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN6R5-30MLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN6R5-30MLDX part is unused and in its original packaging.

Return procedure for PSMN6R5-30MLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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