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Nexperia USA Inc. PSMN6R5-80BS,118

Part No.:
PSMN6R5-80BS,118
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixPSMN6R5-80BS,118.pdf
Description:
MOSFET N-CH 80V 100A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,845

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Product details

Overview

PSMN6R5-80BS,118 from Nexperia is a standard-level N-channel MOSFET in D2PAK (SOT404) package, rated for 80 V VDS, 6.9 mΩ RDS(on) at 10 V VGS and 25 °C, 100 A continuous drain current at Tmb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-efficiency power switch in industrial DC-DC converters, server power supplies, and motor control circuits where low conduction loss and robust avalanche energy handling are required.

For engineers reviewing the PSMN6R5-80BS,118 datasheet, PSMN6R5-80BS,118 pinout, PSMN6R5-80BS,118 application, or PSMN6R5-80BS,118 equivalent, this device is selected for high-current switching nodes requiring stable RDS(on) over temperature, gate compatibility with 10 V logic drivers, and validated unclamped avalanche ruggedness up to 700 mJ.

Technical Context

This MOSFET employs a planar trench-gated silicon process optimized for standard-level gate drive (VGS = 10 V), delivering low RDS(on) without requiring enhanced gate voltage. Its thermal design centers on direct die-to-mounting-base conduction, with Rth(j-mb) = 0.4–0.7 K/W enabling high-power operation when soldered to a thermally robust PCB copper area.

The device features a fully rated source-drain diode (VSD = 0.79–1.2 V at 15 A, Tj = 25 °C) and exhibits controlled dynamic behavior: QG(tot) = 71 nC, QGD = 16 nC, and Ciss/Coss/Crss = 4461/410/214 pF at VDS = 40 V, supporting predictable turn-on/turn-off timing in hard-switched topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 80 V - Maximum blocking voltage in power stage applications; supports 48 V input bus designs with margin.
RDS(on) 6.9 mΩ @ VGS = 10 V, ID = 15 A, Tj = 25 °C - Enables <1 W conduction loss at 40 A, critical for high-efficiency server PSUs.
ID (cont) 100 A @ Tmb = 25 °C - Continuous current rating limited by D2PAK package thermal capability, not die.
EAS 700 mJ - Non-repetitive unclamped avalanche energy; allows safe operation during inductive load switching transients.
QG(tot) 71 nC - Total gate charge determines driver strength requirement; compatible with standard 1–2 A peak gate drivers.
Rth(j-mb) 0.4–0.7 K/W - Junction-to-mounting-base thermal resistance enables >150 W dissipation with proper heatsinking.
VGS(th) 2.3–4.0 V @ Tj = 25 °C - Threshold voltage ensures reliable turn-on with 5 V or 10 V logic-level gate sources.

Pinout & Package

PSMN6R5-80BS,118 uses the D2PAK (SOT404) plastic surface-mount package with three external terminals and an exposed mounting base electrically connected to the drain. The package provides high thermal conductivity and mechanical robustness for high-power switching applications.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control terminal; accepts standard 10 V logic-level drive; internal RG = 0.75 Ω affects switching speed.
2 (D) Drain Main high-side power terminal; internally connected to mounting base; carries full load current and dissipates heat.
3 (S) Source Power return path and reference for gate drive; isolated from mounting base; used for current sensing.
Mounting Base (mb) Drain (electrically tied) Thermal and electrical interface to heatsink; must be soldered to large copper pour for Rth(j-mb) optimization.

Key Features

Feature Design Value
Standard-level gate drive compatibility Operates fully enhanced with 10 V VGS; eliminates need for level-shifting or bootstrap circuitry in mid-voltage systems.
High-temperature qualification Rated for continuous operation up to Tj = 175 °C - suitable for enclosed industrial environments and server chassis with elevated ambient.
Low RDS(on) × QG figure of merit 6.9 mΩ × 71 nC = 490 mΩ·nC - balances conduction and switching losses for high-frequency DC-DC stages.
Robust avalanche capability 700 mJ EAS - withstands inductive turn-off energy without failure, reducing snubber design burden in motor drives.
Integrated source-drain diode VSD = 0.79 V @ 15 A, Tj = 25 °C - enables synchronous rectification or freewheeling paths without external diode.

Applications

Server Power Supply Industrial DC-DC Converter

Use Scenario: Primary-side switching in 48 V–12 V intermediate bus converters delivering >100 A output.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET in synchronous buck topology; switched at 200–500 kHz.

Use Value: Low RDS(on) minimizes conduction loss at high load; high Tj rating maintains reliability under sustained thermal stress.

Use Scenario: Isolated forward or half-bridge converter in programmable logic controller (PLC) power modules.

IC Role / Device Role / Timing Role: Main power switch handling 24–48 V input, operating continuously at 60–80 °C ambient.

Use Value: 175 °C qualification ensures long-term stability; avalanche ruggedness protects against transformer leakage inductance spikes.

Motor Control (BLDC) Load Switching (High-Current)

Use Scenario: Inverter leg switch in 3-phase brushless DC motor drives for HVAC blowers and industrial fans.

IC Role / Device Role / Timing Role: Phase-leg high-side switch; commutated at ≤20 kHz with PWM gating.

Use Value: Fast switching (td(on) = 26 ns, tf = 22 ns) reduces transition losses; low QGD improves Miller immunity.

Use Scenario: Hot-swap or battery disconnect switch in telecom power distribution units handling ≥60 A loads.

IC Role / Device Role / Timing Role: Single-pole, high-current electronic fuse replacement; operated in linear or saturated mode.

Use Value: 100 A continuous rating and 470 A pulsed capability support surge currents; low RDS(on) limits voltage drop and self-heating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP110N8F6 80 V, 9.5 mΩ RDS(on), TO-220FP package, Rth(j-a) = 62 K/W - higher on-resistance and worse thermal performance than D2PAK. Limited to lower-power (<60 A) applications due to package thermal bottleneck; unsuitable for high-density server boards. Select only if TO-220 footprint is mandatory and board-level thermal management cannot accommodate D2PAK.
IRFB4115PBF 150 V, 5.5 mΩ RDS(on), TO-220 package, QG(tot) = 120 nC - higher voltage rating but excessive gate charge increases driver complexity. Over-specified voltage rating adds cost and capacitance; slower switching degrades efficiency above 100 kHz. Prefer only when system requires >100 V blocking or legacy TO-220 layout constraints prevent D2PAK adoption.

Compared with STP110N8F6 and IRFB4115PBF, PSMN6R5-80BS,118 delivers optimal balance of low RDS(on), D2PAK thermal performance, and gate-drive simplicity for 48–80 V industrial and computing power stages - making it the preferred choice where board space, thermal density, and driver integration matter.

Availability

PSMN6R5-80BS,118 is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, motor control inverters, and high-current load switching applications requiring stable component supply across multi-year production cycles.

Supply support for PSMN6R5-80BS,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, diodes, ESD protection, and logic ICs for automotive, industrial, and computing markets.

The PSMN6R5-80BS,118 belongs to Nexperia's standard-level Power MOSFET product line, engineered for industrial-grade power conversion where robustness, thermal resilience, and gate-drive simplicity are prioritized over ultra-low voltage or specialized packaging.

FAQ

What is the maximum continuous drain current for PSMN6R5-80BS,118 at 100 °C mounting base temperature?

At Tmb = 100 °C, the continuous drain current is derated to approximately 82 A, as specified in Table 4 (Limiting Values) under "ID drain current" with VGS = 10 V. This reflects thermal limitation imposed by the D2PAK package's ability to conduct heat away from the junction.

Does PSMN6R5-80BS,118 require a gate resistor for safe operation?

Yes - a series gate resistor (typically 2.2–10 Ω) is recommended to control dV/dt and suppress oscillation during switching. The device's internal gate resistance is 0.75 Ω (AC), but external resistance is needed to dampen ringing caused by PCB trace inductance and gate-driver output impedance.

Can PSMN6R5-80BS,118 be used in synchronous rectification configurations?

Yes - its integrated source-drain diode (VSD = 0.79 V @ 15 A, Tj = 25 °C) and low RDS(on) enable use as a synchronous rectifier in secondary-side buck or flyback converters, provided gate drive is properly timed to avoid shoot-through and body diode conduction is minimized.

Is PSMN6R5-80BS,118 automotive-qualified?

No - this part is explicitly designated for industrial, communications, and domestic equipment per its General Description. It is not AEC-Q101 qualified, has no automotive-specific testing or traceability, and is not recommended for safety-critical or automotive powertrain applications.

PSMN6R5-80BS,118 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
6.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
71 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4461 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
210W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

PSMN6R5-80BS,118 FAQ

1.How can I place an order for PSMN6R5-80BS,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN6R5-80BS,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN6R5-80BS,118 reliable?

The price and inventory of PSMN6R5-80BS,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN6R5-80BS,118 is usually 5 days.

3.What payment methods are accepted for PSMN6R5-80BS,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN6R5-80BS,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN6R5-80BS,118?

PSMN6R5-80BS,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN6R5-80BS,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN6R5-80BS,118?

For technical support, including PSMN6R5-80BS,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN6R5-80BS,118 requirements.

6.How does Aetrix verify that PSMN6R5-80BS,118 is sourced from the original manufacturer or authorized distributors?

All PSMN6R5-80BS,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN6R5-80BS,118 meets industry standards.

7.What is the process for return or replacement of PSMN6R5-80BS,118?

All PSMN6R5-80BS,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN6R5-80BS,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN6R5-80BS,118 part is unused and in its original packaging.

Return procedure for PSMN6R5-80BS,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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