Nexperia USA Inc. PSMN6R5-80PS,127
- Part No.:
- PSMN6R5-80PS,127
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PSMN6R5-80PS,127.pdf
- Description:
- MOSFET N-CH 80V 100A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:4,080
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Product details
Overview
PSMN6R5-80PS from Nexperia is an N-channel standard-level MOSFET in TO-220AB package, rated for 80 V drain-source voltage, 6.9 mΩ RDS(on) at 10 VGS/25 °C, 100 A continuous drain current at Tmb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-efficiency power switch in industrial DC-DC converters and server power supplies.
For engineers reviewing the PSMN6R5-80PS datasheet, PSMN6R5-80PS pinout, PSMN6R5-80PS application, or PSMN6R5-80PS equivalent, this device is selected for high-current load switching where low conduction loss, robust avalanche energy (700 mJ), and thermal stability up to 175 °C are critical design requirements.
Technical Context
This MOSFET employs planar silicon technology with optimized channel geometry to achieve low RDS(on) while maintaining stable threshold voltage (2.3–4.0 V) across -55 to 175 °C. Its gate charge profile (QG(tot) = 71 nC, QGD = 16 nC) supports efficient hard-switching in synchronous buck topologies.
The device features an integrated source-drain diode with 0.79 V forward voltage at 15 A and 48 ns reverse recovery time, enabling use in freewheeling paths without external diode supplementation in moderate-frequency applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum blocking voltage before avalanche onset; defines upper limit for bus voltage in 48 V and 60 V industrial systems. |
| RDS(on) | 6.9 mΩ @ 10 VGS, 15 A, 25 °C - Directly determines I²R conduction loss; enables ≤10 W dissipation at 40 A DC. |
| ID (cont) | 100 A @ Tmb = 25 °C - Limited by TO-220AB package thermal capacity; requires heatsink for sustained >50 A operation. |
| EAS | 700 mJ - Non-repetitive avalanche energy rating; supports unclamped inductive turn-off in motor control and relay drivers. |
| QG(tot) | 71 nC - Total gate charge required to fully switch; sets minimum gate driver peak current (e.g., ≥15 A for 5 ns rise time). |
| Rth(j-mb) | 0.4–0.7 K/W - Junction-to-mounting-base thermal resistance; dictates heatsink selection for target Tj under steady-state power. |
| VGS(th) | 2.3–4.0 V - Gate threshold range ensures reliable turn-on with standard 5 V or 10 V logic-level drivers without overdrive risk. |
Pinout & Package
PSMN6R5-80PS uses the TO-220AB (SOT78) plastic single-ended package with heatsink mounting and three leads. The mounting base is electrically connected to the drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Controls channel conduction; requires ≥10 V drive for full enhancement; internal RG = 0.75 Ω limits high-frequency ringing. |
| 2 (D) | Drain | Main high-side power path; electrically tied to mounting base; must be isolated from heatsink unless system ground reference permits. |
| 3 (S) | Source | Power return node; referenced for gate drive; carries full load current and diode reverse recovery charge during switching. |
Key Features
| Feature | Design Value |
|---|---|
| Standard-level gate drive compatibility | Operates fully enhanced with 10 V gate drive-eliminates need for level-shifting or bootstrap circuits in fixed-rail systems. |
| High-temperature qualification | Rated for continuous operation up to 175 °C junction temperature-enables deployment in sealed industrial enclosures without derating. |
| Low RDS(on) × QG figure of merit | 5.9 mΩ × 71 nC = 419 mΩ·nC-balances conduction and switching losses for optimal efficiency in 100–500 kHz power stages. |
| Integrated body diode | Forward voltage 0.79 V @ 15 A, trr = 48 ns-supports synchronous rectification replacement in non-critical flyback or buck-boost designs. |
| Avalanche ruggedness | 700 mJ unclamped EAS-tolerates inductive kickback in motor phase-legs and solenoid drivers without external snubbers. |
Applications
| DC-to-DC Converters | Load Switching |
|---|---|
Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for telecom shelf power. IC Role / Device Role / Timing Role: High-side main power switch operating at 250 kHz with 50% duty cycle; handles 80 A peak primary current. Use Value: Low RDS(on) reduces conduction loss to <1.5 W at full load; TO-220AB package allows direct bolt-down heatsinking on chassis ground plane. |
Use Scenario: Hot-swap controller for redundant 24 V backplane power distribution in industrial PLC racks. IC Role / Device Role / Timing Role: Inrush-limited main power switch; controlled turn-on via gate resistor network to limit dI/dt to 500 A/ms. Use Value: 100 A continuous rating supports 60 A steady-state load with 40% margin; avalanche rating absorbs fault transients during connector mating. |
| Motor Control | Server Power Supplies |
Use Scenario: Half-bridge high-side switch in 24 V brushed DC motor driver for automated warehouse conveyors. IC Role / Device Role / Timing Role: PWM-controlled power stage switching at 20 kHz; conducts 35 A RMS with 100 A peak stall current. Use Value: 175 °C rating ensures reliability under ambient 70 °C cabinet temperatures; integrated diode recirculates inductive energy during PWM off-time. |
Use Scenario: Secondary-side synchronous rectifier in 12 V VRM for dual-socket Xeon server motherboards. IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter; commutates 120 A per phase with 1 MHz switching. Use Value: 6.9 mΩ RDS(on) cuts conduction loss by 35% vs. comparable 10 mΩ devices; TO-220AB mechanical robustness withstands repeated thermal cycling in datacenter environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | RDS(on) = 4.7 mΩ @ 10 VGS, but higher QG = 131 nC and no 175 °C rating (max Tj = 175 °C not qualified). | Better conduction loss but slower switching; unsuitable for high-temp sealed enclosures. | Prefer PSMN6R5-80PS where thermal environment exceeds 125 °C or avalanche robustness is mandatory. |
| STP80NF55-08 | RDS(on) = 8.0 mΩ @ 10 VGS, lower ID = 80 A, and QG = 120 nC; TO-220FP package lacks mounting base. | Higher conduction loss and no drain-connected heatsink interface; limited to lower-power loads. | Choose PSMN6R5-80PS when board-level heatsinking, 100 A capability, or 700 mJ avalanche energy are required. |
Compared with IRF1404PBF and STP80NF55-08, PSMN6R5-80PS delivers superior thermal resilience (175 °C qualified), optimized gate charge for medium-frequency switching, and a mechanically robust TO-220AB package with drain-integrated heatsink interface-making it the preferred choice for industrial power stages demanding long-term reliability under thermal stress.
Availability
PSMN6R5-80PS is available at Aetrix Electronics and suitable for DC-DC converters, motor control modules, and server power supplies requiring stable component supply across extended temperature ranges and multi-year production cycles.
Supply support for PSMN6R5-80PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with manufacturing rooted in process control and automotive-grade quality systems.
This MOSFET belongs to Nexperia's standard-level power MOSFET product line, engineered for cost-sensitive industrial and communications power conversion where thermal robustness, avalanche tolerance, and gate-drive simplicity are prioritized over ultra-low RDS(on).
FAQ
What is the maximum continuous drain current for PSMN6R5-80PS at 100 °C mounting base temperature?
At Tmb = 100 °C, the continuous drain current is derated to approximately 82 A, as specified in Table 4 (Limiting Values). This value reflects thermal limitation of the TO-220AB package-not silicon capability-and assumes proper heatsinking with low thermal resistance interface.
Does PSMN6R5-80PS have a gate protection diode or ESD structure built-in?
No. PSMN6R5-80PS does not integrate gate oxide protection diodes. Its absolute maximum VGS rating is ±20 V, and gate-source leakage remains below 100 nA at ±20 V. External gate protection (e.g., Zener clamp) is recommended in noisy environments or when driving from long PCB traces.
Can PSMN6R5-80PS be used in avalanche mode repeatedly?
No. The 700 mJ EAS rating is strictly for non-repetitive, unclamped inductive switching events. Repetitive avalanche operation is not characterized or guaranteed and may cause cumulative degradation. Designers must ensure safe operating area (SOA) compliance and avoid entering avalanche during normal switching.
Is the mounting base electrically isolated from the drain in PSMN6R5-80PS?
No. Per Table 2 (Pinning Information) and Figure 18 (Package Outline), the mounting base (mb) is internally connected to the drain terminal (Pin 2). Electrical isolation between heatsink and circuit ground must be implemented externally using insulating washers or thermal pads rated for ≥80 V dielectric strength.
PSMN6R5-80PS,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6.9mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 71 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4461 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 210W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PSMN6R5-80PS,127 FAQ
1.How can I place an order for PSMN6R5-80PS,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN6R5-80PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN6R5-80PS,127 reliable?
The price and inventory of PSMN6R5-80PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN6R5-80PS,127 is usually 5 days.
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5.How can I obtain technical support or documentation for PSMN6R5-80PS,127?
For technical support, including PSMN6R5-80PS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN6R5-80PS,127 requirements.
6.How does Aetrix verify that PSMN6R5-80PS,127 is sourced from the original manufacturer or authorized distributors?
All PSMN6R5-80PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN6R5-80PS,127 meets industry standards.
7.What is the process for return or replacement of PSMN6R5-80PS,127?
All PSMN6R5-80PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN6R5-80PS,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN6R5-80PS,127 part is unused and in its original packaging.
Return procedure for PSMN6R5-80PS,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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