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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN6R7-40MLDX

Name: PSMN6R7-40MLDX
Brand: Nexperia USA Inc.
SKU: PSMN6R7-40MLDX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN6R7-40MLDX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1210, 8-LFPAK33 (5-Lead)

Datasheet:: PSMN6R7-40MLDX.pdf

Description:: MOSFET N-CH 40V 50A LFPAK33

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Product details

Overview

PSMN6R7-40MLDX from Nexperia is a logic-level N-channel enhancement-mode MOSFET in LFPAK33 (SOT1210) package, rated for 40 V V_DS, 6.7 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and 50 A continuous drain current at T_mb = 25 °C. It employs NextPower-S3 TrenchMOS Superjunction technology and is qualified to 175 °C junction temperature, targeting high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the PSMN6R7-40MLDX datasheet, PSMN6R7-40MLDX pinout, PSMN6R7-40MLDX application, or PSMN6R7-40MLDX equivalent, this device is selected for low-R_DS(on), fast switching with soft body-diode recovery, and robust avalanche performance in thermally constrained power stages.

Technical Context

This MOSFET uses advanced TrenchMOS Superjunction architecture optimized for high-efficiency, high-frequency operation. Its low Q_G (10 nC typ), Q_GD (2.5 nC typ), and Q_RR (16 nC typ) minimize switching losses and EMI, while the integrated source-drain diode exhibits t_rr = 23 ns and soft recovery behavior.

The LFPAK33 package features clip-bond die attach and exposed mounting base connected to drain, delivering R_th(j-mb) = 2.09 K/W and enabling wave soldering with visual joint inspection. It supports 58 mJ non-repetitive avalanche energy under unclamped inductive switching conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V/24 V input DC-DC stages
R_DS(on)	6.7 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1 W conduction loss at 40 A in compact layouts
I_D	50 A @ T_mb = 25 °C - Validated continuous current under thermal test conditions
Q_G(tot)	10 nC typ - Reduces gate drive power and enables >1 MHz switching with standard drivers
t_rr	23 ns - Minimizes reverse recovery loss and cross-conduction risk in synchronous rectifiers
R_th(j-mb)	2.09 K/W - Enables efficient heat transfer to PCB copper or heatsink via exposed drain pad
V_GS(th)	1.77 V typ - Ensures full enhancement with 3.3 V or 5 V logic-level gate drive

Pinout & Package

LFPAK33 (SOT1210) is a surface-mount, leaded plastic package with an exposed metal mounting base (drain) and three parallel source leads. It eliminates wire bonds and adhesive, supporting 175 °C operation and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel low-inductance source terminals reduce source loop inductance and improve switching stability
4	Gate (G)	Single gate terminal with low RG (0.8 Ω typ) for precise turn-on/turn-off control
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain; serves as primary heat path and PCB thermal interface

Key Features

Feature	Design Value
Avalanche rated, 100% tested	58 mJ unclamped energy at T_j = 25 °C - Eliminates need for external snubbers in inductive load switching
NextPower-S3 superfast switching	Q_GD/Q_G ratio of 0.25 - Delivers sharp Miller plateau transition and reduced switching tail
Soft body-diode recovery	t_b/t_a = 0.6 - Limits voltage overshoot and ringing during diode commutation in SR applications
Low parasitic inductance/resistance	Source inductance <0.5 nH per lead - Critical for minimizing shoot-through in half-bridge configurations
Wave-solderable exposed leads	Visual solder joint inspection enabled - Supports automated optical inspection (AOI) in high-reliability manufacturing

Applications

Secondary Side Synchronous Rectifier

High-Frequency DC-DC Converter

Use Scenario: Used on secondary side of isolated flyback or LLC resonant converters operating at 300–1000 kHz.

IC Role / Device Role: Replaces Schottky diode to reduce conduction loss and improve efficiency by >2% at full load.

Use Value: 6.7 mΩ R_DS(on) and 23 ns t_rr enable low-loss, low-noise rectification without external gate timing control.

Use Scenario: Integrated into buck or multiphase VRM designs for server CPU/GPU power delivery.

IC Role / Device Role: High-side or low-side switch in point-of-load regulators requiring <5 mΩ on-resistance and fast switching.

Use Value: Low Q_G (10 nC) and Q_GD (2.5 nC) allow clean 1 MHz+ operation with minimal gate driver stress.

Brushless DC Motor Drive

High-Efficiency LED Driver

Use Scenario: Half-bridge leg in 24 V BLDC motor controllers for drones and power tools.

IC Role / Device Role: Low-side switch handling PWM commutation currents up to 50 A peak.

Use Value: 175 °C rating and robust avalanche capability tolerate inductive kickback without derating.

Use Scenario: Primary-side switch in constant-current LED drivers for street lighting and industrial fixtures.

IC Role / Device Role: High-efficiency switching element in buck or SEPIC topologies driving 10–50 A LED strings.

Use Value: Low R_DS(on) and high P_tot (65 W) support high-power density designs with minimal heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	40 V, 1.4 mΩ @ 10 V, PowerSO-8 package (R_th(j-mb) = 2.5 K/W)	Lower R_DS(on) but larger footprint and higher gate charge (25 nC)	Preferred where ultra-low conduction loss dominates over switching speed and board area
Vishay SiR626DP	40 V, 5.1 mΩ @ 10 V, PowerPAK SO-8L (R_th(j-mb) = 2.4 K/W)	Slightly lower R_DS(on), but no 100% avalanche testing and higher Q_GD (3.7 nC)	Selected when cost sensitivity outweighs need for guaranteed avalanche ruggedness

Compared with BSC014N04LS6 and SiR626DP, PSMN6R7-40MLDX offers superior balance of low Q_G/Q_GD, verified avalanche rating, and thermal performance in a compact LFPAK33 footprint-making it optimal for space-constrained, high-frequency, high-reliability power stages.

Availability

PSMN6R7-40MLDX is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, high-frequency DC-DC conversion, and brushless DC motor drive applications requiring stable component supply and long-term production continuity.

Supply support for PSMN6R7-40MLDX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This part belongs to Nexperia's NextPower-S3 logic-level MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in consumer, industrial, and computing applications.

FAQ

What is the maximum continuous drain current for PSMN6R7-40MLDX at 100 °C mounting base temperature?

At T_mb = 100 °C, the device supports 50 A continuous drain current per Figure 2 of the datasheet. This rating assumes adequate PCB copper area and thermal design; actual current is limited by board layout, ambient conditions, and cooling method-not by intrinsic device capability.

Does PSMN6R7-40MLDX require a gate resistor for safe operation in hard-switching applications?

A gate resistor is recommended to dampen ringing and control dV/dt, especially in high-di/dt circuits. With Q_G = 10 nC and typical gate drive impedance, a 5 Ω external resistor provides stable turn-on/turn-off while maintaining <20 ns rise/fall times per datasheet test conditions.

Can PSMN6R7-40MLDX be used in linear mode (as a pass transistor)?

No-it is not characterized or qualified for linear (saturation) operation. The Safe Operating Area (SOA) curve in Figure 3 shows only pulsed and DC limits at V_DS ≤ 8 V for extended bias. Linear use risks thermal runaway due to positive R_DS(on) temperature coefficient above 10 V.

Is the mounting base electrically isolated from other terminals?

No-the mounting base is internally connected to the drain terminal, as confirmed in Table 2 (pinning) and Figure 17 (package outline). Any heatsink or thermal pad contacting the base must be electrically isolated from source and gate unless drain-referenced topology is intended.

PSMN6R7-40MLDX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SOT-1210, 8-LFPAK33 (5-Lead)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2071 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 65W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK33

PSMN6R7-40MLDX FAQ

1.How can I place an order for PSMN6R7-40MLDX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN6R7-40MLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN6R7-40MLDX reliable?

The price and inventory of PSMN6R7-40MLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN6R7-40MLDX is usually 5 days.

3.What payment methods are accepted for PSMN6R7-40MLDX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN6R7-40MLDX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN6R7-40MLDX?

PSMN6R7-40MLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN6R7-40MLDX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN6R7-40MLDX?

For technical support, including PSMN6R7-40MLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN6R7-40MLDX requirements.

6.How does Aetrix verify that PSMN6R7-40MLDX is sourced from the original manufacturer or authorized distributors?

All PSMN6R7-40MLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN6R7-40MLDX meets industry standards.

7.What is the process for return or replacement of PSMN6R7-40MLDX?

All PSMN6R7-40MLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN6R7-40MLDX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN6R7-40MLDX part is unused and in its original packaging.

Return procedure for PSMN6R7-40MLDX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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