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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Nexperia USA Inc. PSMN6R8-40HSX

Name: PSMN6R8-40HSX
Brand: Nexperia USA Inc.
SKU: PSMN6R8-40HSX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN6R8-40HSX

Manufacturer:: Nexperia USA Inc.

Category:: FET, MOSFET Arrays

Package:: SOT-1205, 8-LFPAK56

Datasheet:: PSMN6R8-40HSX.pdf

Description:: MOSFET 2N-CH 40V 40A LFPAK56D

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Product details

Overview

PSMN6R8-40HS from Nexperia is a dual N-channel standard-level MOSFET in LFPAK56D (SOT1205) package, rated for 40 V V_DS, 6.8 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, qualified to 175 °C junction temperature, and designed for high-efficiency synchronous rectification and BLDC motor control in server power supplies.

For engineers reviewing the PSMN6R8-40HS datasheet, PSMN6R8-40HS pinout, PSMN6R8-40HS application, or PSMN6R8-40HS equivalent, this device offers verified dual-FET integration, copper-clip construction for low thermal resistance (R_th(j-mb) = 2.36 K/W), and repetitive avalanche rating - critical for robust DC-DC converter and motor drive design.

Technical Context

This dual MOSFET integrates two identical N-channel TrenchMOS devices in a single LFPAK56D package with isolated drain-source terminals per channel. Each FET supports 40 A continuous drain current at T_mb = 25 °C and features gate threshold voltage (V_GS(th)) of 2.4–4 V across -55 to 175 °C, enabling reliable turn-on with standard 5 V or 10 V logic-level drivers.

Its dynamic performance includes Q_G(tot) = 28.9 nC and Q_GD = 9.1 nC at V_DS = 32 V, supporting fast switching with low Miller effect; Crss = 197–270 pF and Coss = 324–389 pF further enable optimized hard-switching efficiency in high-frequency synchronous buck stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage; defines use in ≤40 V bus systems like 12 V/24 V/36 V server VRMs and BLDC inverters.
R_DS(on)	6.8 mΩ @ V_GS = 10 V, T_j = 25 °C - Low conduction loss enabling <1.4 W dissipation at 20 A, critical for thermally constrained PCB layouts.
I_D	40 A @ T_mb = 25 °C - Continuous current rating limited by package thermal capability, not silicon die.
P_tot	64 W @ T_mb = 25 °C - Total power dissipation ceiling; enables high-power density when mounted on thermally enhanced pads.
R_th(j-mb)	2.36 K/W - Junction-to-mounting-base thermal resistance; allows direct thermal coupling to heatsink or copper plane without thermal vias.
Q_G(tot)	28.9 nC - Total gate charge; determines driver strength requirement (~1.5 A peak for 20 ns rise time with 5 Ω gate resistor).
E_AS	130 mJ - Single-pulse avalanche energy; supports unclamped inductive switching in motor phase-legs without external snubbers.

Pinout & Package

LFPAK56D (SOT1205) is a dual-power SO8 variant with copper-clip construction, solder die attach, and 8-pin surface-mount footprint measuring 4.95 × 5.30 mm (max). It provides separate source/gate/drain terminals for two independent N-channel MOSFETs in one compact, high-reliability package.

Pin/Terminal	Circuit Role	Design Meaning
1	S1	Source terminal of FET1 - connects to low-side return path; electrically isolated from S2.
2	G1	Gate terminal of FET1 - controls turn-on/turn-off of first MOSFET; requires 10 V for full enhancement.
3	S2	Source terminal of FET2 - independent return node for second MOSFET; enables half-bridge or dual-phase configurations.
4	G2	Gate terminal of FET2 - fully isolated gate input; permits independent timing control of both FETs.
5, 6	D2	Drain terminals of FET2 - paralleled pins for low-inductance, high-current drain connection to positive rail.
7, 8	D1	Drain terminals of FET1 - paralleled pins for low-inductance, high-current drain connection; electrically isolated from D2.

Key Features

Feature	Design Value
Dual N-channel integration	Two matched MOSFETs in one LFPAK56D package reduce board area by ~40% vs discrete SO-8 pairs and eliminate layout skew between channels.
Copper-clip die attach	Enables R_th(j-mb) = 2.36 K/W - 3× better than standard wire-bond packages - improving thermal headroom in high-power density designs.
Repetitive avalanche rated	Rated for repeated unclamped inductive switching up to E_AS = 130 mJ per pulse - eliminates need for external avalanche clamps in motor control H-bridges.
175 °C qualification	Guaranteed operation up to T_j = 175 °C - supports high-temperature environments such as sealed server power modules and industrial drives.
TrenchMOS technology	Delivers 6.8 mΩ R_DS(on) at 40 V with low Q_GD/Q_G ratio (9.1/28.9 ≈ 0.31), minimizing switching losses and improving hard-switching efficiency.

Applications

Brushless DC Motor Control

High-Efficiency Server VRM

Use Scenario: Three-phase inverter stage driving 48 V BLDC fans in data center cooling systems.

IC Role / Device Role / Timing Role: Dual N-channel half-bridge switches (FET1/FET2 used as low-side switches per phase leg); synchronized with gate drivers for PWM commutation.

Use Value: 6.8 mΩ R_DS(on) reduces conduction loss by >30% vs comparable 8 mΩ discrete MOSFETs, directly lowering fan subsystem power consumption.

Use Scenario: 48 V-to-12 V intermediate bus converter in AI server power architecture.

IC Role / Device Role / Timing Role: Synchronous rectifier pair in secondary-side synchronous buck stage; operated in complementary mode with primary-side controller.

Use Value: Low Q_GD (9.1 nC) and Crss (197–270 pF) minimize reverse recovery and cross-conduction losses at 500 kHz switching frequency.

DC-DC Converter Primary Switch

High-Performance Synchronous Rectification

Use Scenario: High-current 12 V input buck converter powering GPU voltage rails in edge computing platforms.

IC Role / Device Role / Timing Role: Dual-FET configured as paralleled high-side switches (D1/D2 tied, G1/G2 driven together) to double current capacity while sharing thermal load.

Use Value: 40 A continuous rating at T_mb = 25 °C and 2.36 K/W thermal resistance allow sustained 80 A output with minimal heatsinking.

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Independent FET1 and FET2 used as rectifying switches in interleaved LLC resonant converter outputs.

Use Value: Matched R_DS(on) tracking (<±10% over temperature) ensures balanced current sharing between parallel phases, improving system reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC028N06NS	Single-channel 60 V, 2.8 mΩ SO-8; no dual integration or avalanche rating.	Requires two devices + extra layout area; lacks repetitive avalanche ruggedness for motor drive fault tolerance.	Select only if higher voltage margin (60 V) is mandatory and dual integration is unnecessary.
Vishay SiZ340DT	Dual 30 V, 3.4 mΩ PowerPAIR® 3.3×3.3 mm; lower R_DS(on) but reduced voltage rating.	Not suitable for 40 V bus systems; limited to ≤30 V applications like USB-PD or portable power banks.	Prefer for space-constrained ≤30 V designs where 40 V rating is not required.

Compared with PSMN6R8-40HS, BSC028N06NS trades dual integration and avalanche ruggedness for higher voltage headroom, while SiZ340DT sacrifices bus voltage compatibility for smaller footprint and lower R_DS(on) - making PSMN6R8-40HS uniquely balanced for 40 V industrial and server power applications requiring reliability, density, and thermal performance.

Availability

PSMN6R8-40HS is available at Aetrix Electronics and suitable for brushless DC motor control, high-efficiency server VRMs, and high-performance synchronous rectification requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN6R8-40HS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and computing markets.

PSMN6R8-40HS belongs to Nexperia's TrenchMOS dual-FET product line, engineered specifically for high-density, high-reliability power conversion in server, storage, and motor control systems where thermal efficiency and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current for each FET in PSMN6R8-40HS?

Each FET supports 40 A continuous drain current at mounting base temperature (T_mb) = 25 °C, derating linearly to zero at T_mb = 125 °C per Figure 2. This rating is package-limited, not silicon-limited, and assumes proper PCB copper area for thermal conduction.

Does PSMN6R8-40HS support gate drive with 5 V logic?

No - V_GS(th) ranges from 2.4 V (min) to 4.5 V (max) at T_j = −55 °C, but full enhancement (≤6.8 mΩ R_DS(on)) requires V_GS ≥ 10 V. Driving with 5 V yields R_DS(on) > 20 mΩ and excessive conduction loss; a 10 V gate driver is mandatory for specified performance.

How is thermal performance validated for PSMN6R8-40HS?

Thermal resistance R_th(j-mb) = 2.36 K/W is measured per JEDEC JESD51-14 using a cold plate setup with controlled mounting pressure and thermal interface. The value is confirmed across production lots and correlates to 64 W P_tot at T_mb = 25 °C in Figure 1.

Can FET1 and FET2 be used in a half-bridge configuration?

No - FET1 and FET2 share no internal connection; however, they lack common-source or common-drain topology required for half-bridge operation. They are fully isolated dual devices intended for independent switching or paralleled operation, not complementary high-/low-side pairing.

PSMN6R8-40HSX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1205, 8-LFPAK56

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 40V

Current - Continuous Drain (Id) @ 25°C:: 40A (Ta)

Rds On (Max) @ Id, Vgs:: 6.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 28.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 1947pF @ 25V

Power - Max:: 64W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56D

PSMN6R8-40HSX FAQ

1.How can I place an order for PSMN6R8-40HSX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN6R8-40HSX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN6R8-40HSX reliable?

The price and inventory of PSMN6R8-40HSX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN6R8-40HSX is usually 5 days.

3.What payment methods are accepted for PSMN6R8-40HSX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN6R8-40HSX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN6R8-40HSX?

PSMN6R8-40HSX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN6R8-40HSX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN6R8-40HSX?

For technical support, including PSMN6R8-40HSX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN6R8-40HSX requirements.

6.How does Aetrix verify that PSMN6R8-40HSX is sourced from the original manufacturer or authorized distributors?

All PSMN6R8-40HSX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN6R8-40HSX meets industry standards.

7.What is the process for return or replacement of PSMN6R8-40HSX?

All PSMN6R8-40HSX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN6R8-40HSX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN6R8-40HSX part is unused and in its original packaging.

Return procedure for PSMN6R8-40HSX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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