Nexperia USA Inc. PSMN6R9-100YSFX

Overview

PSMN6R9-100YSFX from Nexperia is a 100 V, 7 mΩ N-channel enhancement-mode MOSFET in LFPAK56 (SOT669) package, qualified to 175 °C junction temperature and optimized for high-efficiency switching in synchronous rectification and motor control. It delivers 90 A continuous drain current at T_mb = 25 °C, features low Q_GD (10.3 nC) and Q_rr (52.4 nC), and supports wave-soldering for industrial power supply assembly.

For engineers reviewing the PSMN6R9-100YSFX datasheet, PSMN6R9-100YSFX pinout, PSMN6R9-100YSFX application, or PSMN6R9-100YSFX equivalent, this page provides verified electrical parameters, thermal resistance (R_th(j-mb) = 0.56 K/W), avalanche ruggedness (E_AS = 321 mJ), gate threshold voltage (V_GS(th) = 3.3 V typ), and LFPAK56 mounting base layout guidance.

Technical Context

This NextPower MOSFET employs trench-gate superjunction technology to achieve low R_DS(on) × Q_G figure-of-merit (FOM), enabling high-frequency operation with reduced switching losses. Its 100 V V_DS rating and 175 °C qualification support robust performance in DC-DC converters and BLDC inverters under thermal stress.

The device integrates an avalanche-rated body diode with 52.4 nC recovered charge and 45.4 ns reverse recovery time, enabling reliable operation in hard-switched flyback and resonant topologies without external snubbers. Gate-source plateau voltage is 5.1 V at V_DS = 50 V, ensuring stable turn-on behavior across temperature.

Key Specifications

Pinout & Package

LFPAK56 (SOT669) is a surface-mount plastic package with exposed copper mounting base for enhanced thermal and electrical performance. It features four leads and a solderable metal base electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with IPP040N10N5 and SIHF100N10E, PSMN6R9-100YSFX offers superior thermal performance via LFPAK56 mounting base, guaranteed avalanche capability, and lower Q_GD-making it optimal for compact, high-reliability, high-frequency power conversion where board-level thermal management is constrained.

Availability

PSMN6R9-100YSFX is available at Aetrix Electronics and suitable for industrial motor drives, USB-PD fast-charge adapters, and high-efficiency LED lighting systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PSMN6R9-100YSFX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This device belongs to the NextPower series, engineered specifically for high-efficiency, high-power-density switching applications in consumer, industrial, and computing power supplies where thermal robustness and avalanche safety are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C mounting base temperature?

The PSMN6R9-100YSFX supports 88 A continuous drain current at T_mb = 100 °C, as specified in Table 5 (Limiting values). This value reflects thermal derating due to increased R_DS(on) and reduced power dissipation capability at elevated temperatures, and is validated by Fig. 2 in the datasheet.

Is the LFPAK56 package compatible with standard Power-SO8 footprints?

No - LFPAK56 (SOT669) has a unique 4-lead outline with an exposed mounting base, differing from legacy Power-SO8 (SOT428). The correct footprint uses 4.2 mm × 3.8 mm pad dimensions with a central 4.1 mm × 3.8 mm thermal pad, as shown in Fig. 18 of the datasheet. Using a generic SO8 footprint risks solder joint voiding and thermal failure.

Does the device require gate resistors for reliable switching?

A gate resistor is recommended to control dV/dt and prevent oscillation, especially in high-speed applications. With internal R_G = 0.9 Ω and low Q_GD, a 5 Ω external resistor achieves optimal trade-off between switching speed (t_r = 14.2 ns, t_f = 16 ns) and EMI suppression, as confirmed by test conditions in Table 10.

How is avalanche ruggedness verified in production?

Nexperia performs 100% unclamped inductive switching (UIS) testing per JEDEC JESD24-11 on every unit. Each device is subjected to I_AS = 36 A at V_sup ≤ 100 V with R_GS = 50 Ω and V_GS = 10 V, verifying minimum E_AS = 321 mJ at T_j(init) = 25 °C - a requirement explicitly stated in Table 5 and Fig. 4.