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Nexperia USA Inc. PSMN7R0-100BS,118

Name: PSMN7R0-100BS,118
Brand: Nexperia USA Inc.
SKU: PSMN7R0-100BS,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN7R0-100BS,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PSMN7R0-100BS,118.pdf

Description:: MOSFET N-CH 100V 100A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN7R0-100BS,118 from Nexperia is a standard-level N-channel MOSFET in D2PAK (SOT404) package, rated for 100 V V_DS, 6.8 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 100 A continuous drain current at T_mb = 25 °C and supports high-efficiency DC-to-DC converters, motor control, and server power supplies.

For engineers reviewing the PSMN7R0-100BS,118 datasheet, PSMN7R0-100BS,118 pinout, PSMN7R0-100BS,118 application, or PSMN7R0-100BS,118 equivalent, this device is selected for its low conduction loss, standard gate drive compatibility (V_GS = 10 V), and robust avalanche energy rating of 315 mJ - critical for hard-switching and inductive load management.

Technical Context

This MOSFET employs planar silicon technology with optimized channel geometry to achieve low R_DS(on) while maintaining stable threshold voltage (V_GS(th) = 2–4 V at 25 °C) and tight parametric distribution across temperature. Its gate charge profile (Q_G(tot) = 125 nC, Q_GD = 36 nC) supports efficient switching in hard-switched topologies up to several hundred kHz.

The D2PAK package integrates a thermally enhanced mounting base directly connected to the drain, enabling low R_th(j-mb) (0.3–0.56 K/W) for high-power dissipation. The internal source-drain diode exhibits V_SD = 0.8–1.2 V at I_S = 25 A and T_j = 25 °C, with t_rr = 64 ns and Q_r = 167 nC - suitable for synchronous rectification and freewheeling roles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum blocking voltage for industrial 48 V bus and server 12 V/48 V intermediate bus applications
R_DS(on)	6.8 mΩ @ V_GS = 10 V, I_D = 15 A, T_j = 25 °C - enables <1 W conduction loss at 40 A, reducing heatsink requirements
I_D (cont)	100 A @ T_mb = 25 °C - supports high-current load switching and motor phase legs without parallel devices
Q_G(tot)	125 nC @ V_DS = 50 V, I_D = 25 A - determines gate driver current demand and switching speed in hard-switched SMPS
E_AS	315 mJ unclamped avalanche energy - allows reliable operation under inductive turn-off stress without external snubbers
R_th(j-mb)	0.3–0.56 K/W - enables direct thermal coupling to heatsinks via mounting base, critical for >200 W power stages
V_GS(th)	2–4 V @ T_j = 25 °C - ensures clean turn-on with standard 5 V or 10 V logic-level gate drivers

Pinout & Package

D2PAK (SOT404) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) electrically connected to drain and thermally coupled to PCB/heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; requires ≤20 V gate-source voltage; internal R_G = 0.74 Ω limits high-frequency ringing
2	Drain (D)	Main high-side current path; electrically and thermally tied to mounting base; not externally accessible per datasheet note [1]
3	Source (S)	Return path for load current; referenced to gate drive ground; used for current sensing and feedback
mb	Mounting Base	Drain-connected thermal interface; must be soldered to copper pour or heatsink for R_th(j-mb) performance

Key Features

Feature	Design Value
Standard-level gate drive compatibility	Operates fully enhanced at V_GS = 10 V - eliminates need for level-shifters or specialized gate drivers
High-temperature qualification	Rated for continuous operation up to T_j = 175 °C - supports compact, sealed, or high-ambient industrial environments
Low R_DS(on) × Q_G figure-of-merit	6.8 mΩ × 125 nC = 850 mΩ·nC - balances conduction and switching losses in 100–500 kHz DC-DC converters
Robust avalanche capability	315 mJ non-repetitive E_AS - withstands inductive energy dump during overcurrent or short-circuit events
Optimized body diode	t_rr = 64 ns, Q_r = 167 nC - reduces reverse recovery loss and EMI in freewheeling and synchronous rectifier configurations

Applications

DC-to-DC Converters

Server Power Supplies

Use Scenario: Primary-side switch in isolated 48 V–12 V buck-derived converters for AI accelerators.

IC Role / Device Role / Timing Role: High-side power switch handling 60–100 A peak currents with 100–300 kHz switching frequency.

Use Value: 6.8 mΩ R_DS(on) minimizes conduction loss at full load; 315 mJ avalanche rating absorbs transformer leakage energy during MOSFET turn-off.

Use Scenario: Output synchronous rectifier in 12 V VRM modules for CPU/GPU power delivery.

IC Role / Device Role / Timing Role: Low-side switch operating in forced continuous conduction mode (FCCM) with fast body diode recovery.

Use Value: 64 ns t_rr and 167 nC Q_r reduce cross-conduction loss and output ripple; D2PAK mounting base enables direct thermal attachment to VRM heatsink.

Motor Control

Load Switching

Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for industrial automation actuators.

IC Role / Device Role / Timing Role: High-current switching element controlling phase current with PWM frequencies up to 20 kHz.

Use Value: 100 A continuous rating supports 3 kW motor phases; 175 °C T_j rating ensures reliability under stall conditions and ambient temperatures up to 85 °C.

Use Scenario: Hot-swap and inrush current limiting in telecom power distribution units.

IC Role / Device Role / Timing Role: Main power FET controlling 48 V system rail with controlled turn-on via gate resistor network.

Use Value: Standard 10 V gate drive simplifies sequencing circuitry; 269 W P_tot at T_mb = 25 °C enables high-duty-cycle operation without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100N10F7	100 V, 6.5 mΩ @ 10 V, TO-220FP package, R_th(j-a) = 65 K/W (higher than D2PAK's 0.56 K/W to base)	Lacks integrated mounting base; requires separate heatsink and isolation; lower thermal efficiency in high-power density designs	Prefer PSMN7R0-100BS,118 when board space and thermal performance are constrained; STP100N10F7 suits cost-sensitive, lower-power, through-hole assemblies.
IRF1404ZPBF	100 V, 7.2 mΩ @ 10 V, TO-220 package, Q_G(tot) = 140 nC (12 % higher), E_AS = 270 mJ (14 % lower)	Higher gate charge increases driver loss; lower avalanche energy reduces margin in inductive switching	PSMN7R0-100BS,118 offers superior thermal interface and ruggedness for mission-critical industrial loads; IRF1404ZPBF remains viable for legacy designs with existing TO-220 footprints.

Compared with STP100N10F7 and IRF1404ZPBF, PSMN7R0-100BS,118 provides lower thermal resistance to heatsink, higher avalanche energy, and tighter R_DS(on) tolerance - making it preferable for high-reliability, high-power-density applications where thermal management and fault robustness are design-critical.

Availability

PSMN7R0-100BS,118 is available at Aetrix Electronics and suitable for DC-to-DC converters, server power supplies, motor control, and load switching requiring stable component supply across industrial, communications, and domestic equipment programs.

Supply support for PSMN7R0-100BS,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in MOSFETs, diodes, and ESD protection devices.

This part belongs to Nexperia's standard-level Power MOSFET product line, engineered for industrial-grade efficiency, thermal resilience, and ruggedness in high-current switching applications - not automotive or ultra-low-voltage logic use cases.

FAQ

What is the maximum continuous drain current for PSMN7R0-100BS,118 at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to approximately 55 A, based on Figure 1 in the datasheet. This reflects thermal limitation of the D2PAK package rather than silicon capability, and assumes proper PCB copper area and heatsinking per the recommended footprint.

Is PSMN7R0-100BS,118 suitable for gate driving with 5 V logic-level signals?

No - it is a standard-level MOSFET requiring ≥10 V V_GS for full enhancement. At V_GS = 5 V, R_DS(on) rises significantly (>25 mΩ), increasing conduction loss beyond acceptable levels. A dedicated 10 V gate driver or bootstrap circuit is required.

How is the mounting base (mb) electrically connected in PSMN7R0-100BS,118?

The mounting base is internally connected to the drain terminal (pin 2), as confirmed in Table 2 and package outline Fig 18. This connection is fixed and non-isolatable; any heatsink or thermal pad must be electrically insulated if drain potential differs from system ground.

Does PSMN7R0-100BS,118 have automotive qualification?

No - the datasheet explicitly states this is a non-automotive qualified product. It is not tested to AEC-Q101, lacks automotive-specific screening, and carries no warranty for use in safety-critical or life-support systems. Industrial and commercial applications only.

PSMN7R0-100BS,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6686 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 269W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PSMN7R0-100BS,118 FAQ

1.How can I place an order for PSMN7R0-100BS,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN7R0-100BS,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN7R0-100BS,118 reliable?

The price and inventory of PSMN7R0-100BS,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN7R0-100BS,118 is usually 5 days.

3.What payment methods are accepted for PSMN7R0-100BS,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN7R0-100BS,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN7R0-100BS,118?

PSMN7R0-100BS,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN7R0-100BS,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN7R0-100BS,118?

For technical support, including PSMN7R0-100BS,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN7R0-100BS,118 requirements.

6.How does Aetrix verify that PSMN7R0-100BS,118 is sourced from the original manufacturer or authorized distributors?

All PSMN7R0-100BS,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN7R0-100BS,118 meets industry standards.

7.What is the process for return or replacement of PSMN7R0-100BS,118?

All PSMN7R0-100BS,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN7R0-100BS,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN7R0-100BS,118 part is unused and in its original packaging.

Return procedure for PSMN7R0-100BS,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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