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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN7R0-100PS,127

Name: PSMN7R0-100PS,127
Brand: Nexperia USA Inc.
SKU: PSMN7R0-100PS,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN7R0-100PS,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN7R0-100PS,127.pdf

Description:: MOSFET N-CH 100V 100A TO220AB

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Product details

Overview

PSMN7R0-100PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 100 V drain-source voltage, 6.8 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 100 A continuous drain current at T_mb = 25 °C and supports high-efficiency power switching in industrial DC-DC converters and motor control stages.

For engineers reviewing the PSMN7R0-100PS datasheet, PSMN7R0-100PS pinout, PSMN7R0-100PS application, or PSMN7R0-100PS equivalent, key selection criteria include its 0.3 K/W typical thermal resistance from junction to mounting base, 36 nC gate-drain charge, 125 nC total gate charge, and robust 316 mJ unclamped avalanche energy rating - all critical for thermally constrained, high-reliability power stage designs.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve low conduction loss while maintaining stable threshold voltage across -55 °C to 175 °C. Its gate threshold voltage ranges from 2 V (min) to 4.6 V (max), enabling compatibility with standard 10 V gate drivers without requiring level-shifting circuitry.

The device integrates an intrinsic body diode with 0.8–1.2 V forward voltage at 25 A and 64 ns reverse recovery time, supporting synchronous rectification and freewheeling operation. Its SOA is defined up to 100 V and 475 A peak pulsed current, with thermal derating governed by mounting base temperature per Fig. 1 and Fig. 2.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before avalanche onset; defines upper limit of input/output rail voltage in buck, boost, and half-bridge topologies.
R_DS(on)	6.8 mΩ @ V_GS = 10 V, T_j = 25 °C - Directly determines I²R conduction loss; enables <1.7 W loss at 50 A, critical for thermal management in server PSUs.
I_D	100 A @ T_mb = 25 °C - Continuous current capability limited by package thermal resistance; requires heatsink interface with ≤0.56 K/W total thermal path.
Q_G(tot)	125 nC - Total gate charge defining driver strength requirement; dictates minimum gate driver peak current ≥2.5 A for 50 ns turn-on with 4.7 Ω external resistor.
E_AS	316 mJ - Non-repetitive avalanche energy rating; allows safe operation during inductive load switching transients without snubber circuits.
R_th(j-mb)	0.3 K/W typ - Junction-to-mounting-base thermal resistance; enables direct thermal coupling to heatsink, simplifying thermal design vs. isolated packages.
C_iss	6686 pF - Input capacitance at V_DS = 50 V; impacts gate drive loop stability and EMI filtering requirements in high-frequency SMPS.

Pinout & Package

PSMN7R0-100PS uses the TO-220AB (SOT78) plastic single-ended package with heatsink mounting via the metal mounting base, which is electrically connected to the drain terminal. The package features three leads and one mounting hole, optimized for mechanical stability and thermal transfer in power applications.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode; accepts 10 V standard-level drive; threshold voltage 2–4.6 V ensures reliable turn-on with common logic-level controllers.
2 (D)	Drain	Main high-side power terminal; electrically tied to mounting base; must be isolated from heatsink unless system ground reference permits.
3 (S)	Source	Power return node; referenced to gate drive ground; used for current sensing and feedback in source-switched configurations.
Mounting base (mb)	Drain (common)	Integral thermal and electrical connection to drain; requires insulating washer if heatsink is grounded; enables low-inductance, low-resistance heat path.

Key Features

Feature	Design Value
Low R_DS(on)	6.8 mΩ at 25 °C enables <1.7 W conduction loss at 50 A, reducing heatsink size and improving efficiency in 48 V server power rails.
High avalanche ruggedness	316 mJ non-repetitive E_AS allows safe operation during inductive switching events without external clamping, lowering BOM count in motor drives.
Standard-level gate drive	V_GS(th) range (2–4.6 V) ensures full enhancement with 10 V gate drivers, eliminating need for dedicated gate bias supplies in industrial PLC outputs.
175 °C junction rating	Extended temperature qualification supports operation in sealed enclosures or high-ambient environments like telecom rectifiers and solar inverters.
TO-220AB thermal performance	0.3 K/W typical R_th(j-mb) provides superior thermal transfer vs. DPAK or SO-8, enabling higher sustained power density in space-constrained designs.

Applications

DC-to-DC Converters

Load Switching

Use Scenario: Primary-side switch in 48 V–12 V isolated buck-boost converters for data center power distribution.

IC Role / Device Role / Timing Role: High-side power switch handling 50–80 A continuous current with 100 kHz–500 kHz PWM switching.

Use Value: 6.8 mΩ R_DS(on) and 125 nC Q_G enable >95% efficiency at full load while maintaining thermal margin on compact heatsinks.

Use Scenario: Hot-swap and inrush current limiting in industrial backplane power modules.

IC Role / Device Role / Timing Role: Low-side load switch controlling 48 V/20 A supply to downstream subsystems with controlled ramp-up.

Use Value: 100 V rating and 316 mJ avalanche energy tolerate bus transients during plug-in events without failure or protection circuitry.

Motor Control

Server Power Supplies

Use Scenario: Half-bridge leg in 3-phase BLDC motor drives for HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled power switch operating at 20 kHz with bidirectional current flow.

Use Value: Body diode t_rr = 64 ns and Q_r = 167 nC minimize switching losses and EMI during freewheeling, improving acoustic noise and efficiency.

Use Scenario: Secondary-side synchronous rectifier in 12 V VRM modules for AI accelerator cards.

IC Role / Device Role / Timing Role: Low-V_DS power switch conducting up to 100 A with minimal voltage drop under transient load steps.

Use Value: 0.3 K/W R_th(j-mb) and 175 °C rating sustain 100 A output continuously in high-density, forced-air-cooled server chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPBF	R_DS(on) = 44 mΩ @ 10 V (7.7× higher); Q_G = 71 nC; T_j max = 175 °C; same TO-220AB package.	Higher conduction loss limits use to ≤20 A continuous; unsuitable for high-current server or motor control where PSMN7R0-100PS achieves 5× lower I²R loss.	Select only for cost-sensitive, low-power (<100 W) industrial controls where thermal headroom exists and efficiency is secondary.
STP110N10F7	R_DS(on) = 7.2 mΩ @ 10 V (slightly higher); Q_G = 110 nC; E_AS = 220 mJ; T_j max = 175 °C; TO-220FP package (isolated tab).	Lower avalanche energy reduces robustness in unclamped inductive loads; isolated tab adds thermal resistance (~0.8 K/W vs. 0.3 K/W).	Prefer when electrical isolation between drain and heatsink is mandatory; avoid where maximum thermal performance and avalanche margin are required.

Compared with IRF540NPBF and STP110N10F7, PSMN7R0-100PS offers the lowest R_DS(on), highest E_AS, and best thermal resistance - making it optimal for high-current, high-reliability power conversion where conduction loss, thermal density, and transient survivability are design-critical.

Availability

PSMN7R0-100PS is available at Aetrix Electronics and suitable for server power supplies, industrial motor control systems, and DC-DC converter designs requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for PSMN7R0-100PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with manufacturing rooted in process innovation and automotive-grade quality systems.

This part belongs to Nexperia's standard-level power MOSFET product line, engineered for industrial and communications equipment demanding high efficiency, ruggedness, and thermal resilience without gate-drive complexity.

FAQ

Is PSMN7R0-100PS suitable for gate drive with 5 V logic?

No. PSMN7R0-100PS is a standard-level MOSFET requiring ≥10 V gate drive for full enhancement. At V_GS = 5 V, R_DS(on) rises above 20 mΩ, increasing conduction loss significantly. It is incompatible with 3.3 V or 5 V microcontroller GPIOs without a gate driver IC.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Fig. 1 in the datasheet, the continuous drain current drops to approximately 55 A at T_mb = 100 °C due to thermal derating. This reflects the 0.3 K/W R_th(j-mb) and 175 °C T_j(max), not package current limits alone.

Does the mounting base require electrical isolation from the heatsink?

Yes - the mounting base is internally connected to the drain (Pin 2). If the heatsink is grounded or at a different potential than the drain node, an insulating pad and shoulder washers must be used to prevent short circuits and ensure safety compliance.

Can PSMN7R0-100PS replace a logic-level MOSFET in an existing design?

No - it cannot directly replace logic-level MOSFETs (e.g., those specified for V_GS(th) ≤ 2.5 V). Its 2–4.6 V threshold and 10 V drive requirement mean gate driver redesign is necessary; substituting without verification risks incomplete turn-on and excessive heating.

PSMN7R0-100PS,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6686 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 269W (Tc)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN7R0-100PS,127 FAQ

1.How can I place an order for PSMN7R0-100PS,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN7R0-100PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN7R0-100PS,127 reliable?

The price and inventory of PSMN7R0-100PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN7R0-100PS,127 is usually 5 days.

3.What payment methods are accepted for PSMN7R0-100PS,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN7R0-100PS,127 transactions.

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4.How is shipping managed for PSMN7R0-100PS,127?

PSMN7R0-100PS,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN7R0-100PS,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN7R0-100PS,127?

For technical support, including PSMN7R0-100PS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN7R0-100PS,127 requirements.

6.How does Aetrix verify that PSMN7R0-100PS,127 is sourced from the original manufacturer or authorized distributors?

All PSMN7R0-100PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN7R0-100PS,127 meets industry standards.

7.What is the process for return or replacement of PSMN7R0-100PS,127?

All PSMN7R0-100PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN7R0-100PS,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN7R0-100PS,127 part is unused and in its original packaging.

Return procedure for PSMN7R0-100PS,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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