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NXP Semiconductors PSMN7R0-100XS,127

Name: PSMN7R0-100XS,127
Brand: NXP Semiconductors
SKU: PSMN7R0-100XS,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN7R0-100XS,127

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: PSMN7R0-100XS,127.pdf

Description:: MOSFET N-CH 100V 55A TO220F

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Product details

Overview

PSMN7R0-100XS from Nexperia is a standard-level N-channel MOSFET in TO-220F (SOT186A) package, rated for 100 V drain-source voltage, 6.8 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 55 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-efficiency power switch in AC-to-DC power supplies and synchronous rectification circuits.

For engineers reviewing the PSMN7R0-100XS datasheet, PSMN7R0-100XS pinout, PSMN7R0-100XS application, or PSMN7R0-100XS equivalent, key selection considerations include its isolated TO-220F package, 2.35 K/W junction-to-mounting-base thermal resistance, 420 mJ non-repetitive avalanche energy rating, and suitability for standard-level gate drive (V_GS(th) = 2–4 V).

Technical Context

This MOSFET employs TrenchMOS technology to achieve low conduction and switching losses, with R_DS(on) increasing predictably from 5.4 mΩ at 25 °C to 15.1 mΩ at 175 °C junction temperature. Its gate charge profile includes 121 nC total gate charge and 34 nC gate-drain charge, supporting efficient hard-switching operation up to 100 V.

The device features an electrically isolated mounting base rated for 2500 V_RMS isolation voltage and 10 pF isolation capacitance, enabling direct heatsink mounting without additional insulation. Its source-drain diode exhibits 0.76–1.2 V forward voltage at 10 A and 64 ns reverse recovery time, suitable for freewheeling and synchronous rectification roles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage; supports primary-side switching in 48 V input DC-DC converters and universal-input AC-DC front-ends.
R_DS(on)	6.8 mΩ max @ V_GS = 10 V, T_j = 25 °C - Enables <1.5 W conduction loss at 60 A, critical for high-current server PSU rails.
I_D	55 A @ T_mb = 25 °C - Sustains high pulsed loads in motor control inverters when heatsinked to ambient.
E_DS(AL)S	420 mJ - Withstands unclamped inductive turn-off events in relay drivers and solenoid controls without failure.
R_th(j-mb)	2.35 K/W typ - Allows 23.7 W dissipation with only 55 °C temperature rise from junction to heatsink, simplifying thermal design.
V_GS(th)	2–4 V @ T_j = 25 °C - Compatible with 3.3 V and 5 V microcontroller gate drivers without level-shifting circuitry.
C_iss	6686 pF - Determines Miller effect during switching; requires careful gate resistor selection to balance speed vs. EMI in 100 kHz–500 kHz SMPS.

Pinout & Package

TO-220F (SOT186A) plastic single-ended package with electrically isolated mounting base, 3 leads, and one mounting hole. Designed for direct heatsink attachment with no additional insulator required.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts standard-level logic drive (0–10 V); internal gate resistance 0.74 Ω limits ringing.
2 (D)	Drain	High-side switching node; connected to input bus or transformer secondary; carries full load current.
3 (S)	Source	Reference node for gate drive; tied to power ground or low-side switch source; forms return path for load current.
Mounting Base (mb)	Isolated Heatsink Interface	Electrically isolated from all pins (2500 V_RMS); provides primary thermal path to heatsink; eliminates need for mica washers.

Key Features

Feature	Design Value
Isolated TO-220F package	Enables direct bolt-down to chassis or heatsink without thermal pad or insulator, reducing assembly cost and thermal resistance by ~0.5 K/W.
Low R_DS(on) at 100 V rating	6.8 mΩ max delivers >95% efficiency in 12 V/50 A synchronous buck stages, outperforming typical 8–10 mΩ alternatives.
High avalanche ruggedness	420 mJ non-repetitive energy rating allows reliable operation in inductive load switching without external snubbers.
Standard-level gate drive	V_GS(th) of 2–4 V ensures full enhancement with common 3.3 V/5 V controllers, eliminating gate driver ICs in cost-sensitive designs.
175 °C junction rating	Supports operation in sealed industrial enclosures or high-ambient environments where passive cooling dominates.

Applications

AC-to-DC Power Supplies	Server Power Supplies
Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW LLC resonant converters. IC Role / Device Role / Timing Role: High-side main switch handling 390 V DC bus, operating at 200–300 kHz with zero-voltage switching. Use Value: Low C_iss and Q_GD minimize switching losses; isolated package simplifies heatsinking on metal chassis.	Use Scenario: Secondary-side synchronous rectifier in 12 V/100 A VR13 buck converters for AI accelerators. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by dedicated gate driver IC, replacing Schottky diodes. Use Value: 6.8 mΩ R_DS(on) reduces conduction loss by 60% vs. 45 V Schottky, improving full-load efficiency by 1.2%.
Motor Control	Synchronous Rectification
Use Scenario: Half-bridge leg in 24 V BLDC motor drives for industrial automation actuators. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter, commutated at ≤20 kHz with PWM dead-time control. Use Value: 55 A I_D rating supports 3× peak motor current surges; avalanche rating handles back-EMF transients.	Use Scenario: Output rectification in 48 V/20 A telecom DC-DC modules with active clamp forward topology. IC Role / Device Role / Timing Role: Synchronous rectifier driven by transformer-coupled gate signal, replacing 100 V Schottky diodes. Use Value: 0.76 V V_SD and 64 ns t_rr minimize reverse recovery loss; isolated package enables shared heatsink with primary MOSFET.

AC-to-DC Power Supplies

Server Power Supplies

Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW LLC resonant converters.

IC Role / Device Role / Timing Role: High-side main switch handling 390 V DC bus, operating at 200–300 kHz with zero-voltage switching.

Use Value: Low C_iss and Q_GD minimize switching losses; isolated package simplifies heatsinking on metal chassis.

Use Scenario: Secondary-side synchronous rectifier in 12 V/100 A VR13 buck converters for AI accelerators.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by dedicated gate driver IC, replacing Schottky diodes.

Use Value: 6.8 mΩ R_DS(on) reduces conduction loss by 60% vs. 45 V Schottky, improving full-load efficiency by 1.2%.

Motor Control

Synchronous Rectification

Use Scenario: Half-bridge leg in 24 V BLDC motor drives for industrial automation actuators.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter, commutated at ≤20 kHz with PWM dead-time control.

Use Value: 55 A I_D rating supports 3× peak motor current surges; avalanche rating handles back-EMF transients.

Use Scenario: Output rectification in 48 V/20 A telecom DC-DC modules with active clamp forward topology.

IC Role / Device Role / Timing Role: Synchronous rectifier driven by transformer-coupled gate signal, replacing 100 V Schottky diodes.

Use Value: 0.76 V V_SD and 64 ns t_rr minimize reverse recovery loss; isolated package enables shared heatsink with primary MOSFET.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPBF	R_DS(on) = 44 mΩ @ 100 V; TO-220 (non-isolated); 33 A I_D; no avalanche rating specified.	Lacks isolation and avalanche ruggedness; requires insulating washer; unsuitable for unclamped inductive loads.	Select only if cost is primary constraint and thermal/mechanical isolation is handled externally.
STP110N10F7	R_DS(on) = 7.5 mΩ @ 100 V; TO-220FP (isolated); 110 A I_D; 600 mJ avalanche energy; higher gate charge (140 nC).	Higher current and avalanche margin but slower switching due to larger Q_G; may require gate driver redesign.	Prefer for high-reliability motor drives where surge robustness outweighs switching speed requirements.

Compared with IRF540NPBF, PSMN7R0-100XS offers 85% lower R_DS(on) and guaranteed isolation, enabling simpler thermal management. Against STP110N10F7, it trades 15% higher R_DS(on) for 15% lower Q_G, favoring high-frequency SMPS over high-current motor control.

Availability

PSMN7R0-100XS is available at Aetrix Electronics and suitable for AC-to-DC power supply equipment, server power supplies, and motor control systems requiring stable component supply across extended production lifecycles.

Supply support for PSMN7R0-100XS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The PSMN7R0-100XS belongs to Nexperia's TrenchMOS standard-level PowerMOS family, engineered for high-efficiency switching in industrial power conversion and motor drive applications where reliability and thermal performance are critical.

FAQ

What is the maximum junction temperature rating for the PSMN7R0-100XS?

The PSMN7R0-100XS is qualified to a maximum junction temperature of 175 °C, as confirmed in the Limiting Values table (T_j Max = 175 °C). This rating enables operation in high-ambient environments such as enclosed industrial drives or sealed server power supplies, provided thermal design maintains junction temperature within this limit using the specified R_th(j-mb) = 2.35 K/W.

Does the PSMN7R0-100XS have an electrically isolated mounting base?

Yes, the PSMN7R0-100XS uses the TO-220F (SOT186A) package with an electrically isolated mounting base rated for 2500 V_RMS isolation voltage and 10 pF isolation capacitance. This allows direct mechanical attachment to a heatsink or chassis without additional insulation, reducing thermal resistance and assembly complexity compared to standard TO-220 packages.

What is the gate threshold voltage range for the PSMN7R0-100XS?

The gate-source threshold voltage (V_GS(th)) for the PSMN7R0-100XS is specified as 2–4 V at T_j = 25 °C and 1–4.6 V across the full temperature range (−55 °C to 175 °C). This standard-level threshold ensures compatibility with 3.3 V and 5 V microcontrollers and gate drivers without requiring level-shifting circuitry.

How much non-repetitive avalanche energy can the PSMN7R0-100XS withstand?

The PSMN7R0-100XS is rated for 420 mJ of non-repetitive drain-source avalanche energy (E_DS(AL)S) under conditions of V_GS = 10 V, T_j(init) = 25 °C, I_D = 55 A, V_sup ≤ 100 V, unclamped, and R_GS = 50 Ω. This ruggedness supports reliable operation in inductive load switching, such as motor phase legs or relay drivers, without external snubber networks.

What is the typical drain-source on-resistance of the PSMN7R0-100XS at elevated temperature?

At V_GS = 10 V and I_D = 15 A, the PSMN7R0-100XS exhibits a typical R_DS(on) of 9.45 mΩ at T_j = 100 °C and 15.1 mΩ at T_j = 175 °C. This predictable positive temperature coefficient enables current sharing in paralleled configurations and simplifies thermal derating calculations for continuous operation.

PSMN7R0-100XS,127 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 121 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6686 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 57.7W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220F

PSMN7R0-100XS,127 FAQ

1.How can I place an order for PSMN7R0-100XS,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN7R0-100XS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN7R0-100XS,127 reliable?

The price and inventory of PSMN7R0-100XS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN7R0-100XS,127 is usually 5 days.

3.What payment methods are accepted for PSMN7R0-100XS,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN7R0-100XS,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN7R0-100XS,127?

PSMN7R0-100XS,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN7R0-100XS,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN7R0-100XS,127?

For technical support, including PSMN7R0-100XS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN7R0-100XS,127 requirements.

6.How does Aetrix verify that PSMN7R0-100XS,127 is sourced from the original manufacturer or authorized distributors?

All PSMN7R0-100XS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN7R0-100XS,127 meets industry standards.

7.What is the process for return or replacement of PSMN7R0-100XS,127?

All PSMN7R0-100XS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN7R0-100XS,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN7R0-100XS,127 part is unused and in its original packaging.

Return procedure for PSMN7R0-100XS,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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