Nexperia USA Inc. PSMN7R0-30YL,115

Overview

PSMN7R0-30YL from Nexperia is a logic-level N-channel enhancement-mode TrenchMOS FET in LFPAK (SOT669) package, rated for 30 V V_DS, 7 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 76 A continuous drain current at T_mb = 25 °C, and optimized for industrial and communications power switching applications including DC-DC converters and Class-D amplifiers.

For engineers reviewing the PSMN7R0-30YL datasheet, PSMN7R0-30YL pinout, PSMN7R0-30YL application, or PSMN7R0-30YL equivalent, this MOSFET supports logic-level gate drive (V_GS(th) = 1.3–2.15 V), delivers low conduction loss with 4.92 mΩ typical R_DS(on), and provides robust avalanche energy rating (21 mJ) - critical for reliable high-current switching in server power supplies and motor control circuits.

Technical Context

This device employs TrenchMOS technology to achieve low R_DS(on) and fast switching performance, with Q_GD = 2.9 nC and Q_G(tot) = 10 nC at V_GS = 4.5 V, enabling efficient operation in hard-switched topologies. Its gate threshold voltage range (1.3–2.15 V at 25 °C) ensures compatibility with 3.3 V and 5 V logic controllers without level-shifting circuitry.

The LFPAK package features an exposed mounting base connected to the drain, delivering R_th(j-mb) = 1.4–2.45 K/W for effective thermal management in high-power density designs. The integrated source-drain diode exhibits V_SD = 0.88–1.2 V at I_S = 25 A and T_j = 25 °C, supporting synchronous rectification and freewheeling functions.

Key Specifications

Pinout & Package

PSMN7R0-30YL uses the LFPAK (SOT669) plastic surface-mount package with an exposed metal mounting base electrically connected to the drain terminal. This thermally enhanced 4-lead outline supports high-current routing and low-inductance layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IRLML6344TRPBF, PSMN7R0-30YL offers 23× lower R_DS(on) and 18× higher current capacity, making it viable for 45–76 A industrial switching; versus DMN3025LSD-13, it trades dual-channel flexibility for single-device simplicity and superior thermal resistance via LFPAK mounting base.

Availability

PSMN7R0-30YL is available at Aetrix Electronics and suitable for server power supplies, Class-D audio amplifiers, and industrial motor control systems requiring stable component supply across multi-year production cycles.

Supply support for PSMN7R0-30YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

PSMN7R0-30YL belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial and communications infrastructure where thermal performance and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current for PSMN7R0-30YL at 100 °C mounting base temperature?

The maximum continuous drain current is 53 A at T_mb = 100 °C and V_GS = 10 V, as specified in Table 4 (Limiting Values). This derating reflects thermal constraints of the LFPAK package and must be validated against actual PCB copper area and airflow in the target application.

Does PSMN7R0-30YL have an integrated body diode, and what are its key parameters?

Yes - it includes a monolithic source-drain diode with V_SD = 0.88–1.2 V at I_S = 25 A and T_j = 25 °C, t_rr = 30 ns, and Q_r = 22 nC. These values enable use in synchronous rectification and freewheeling paths without external diodes in many DC-DC topologies.

Can PSMN7R0-30YL be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

Yes - its V_GS(th) range (1.3–2.15 V at 25 °C) and logic-level characterization ensure full enhancement at 3.3 V, though R_DS(on) rises to 6.97–9.1 mΩ at V_GS = 4.5 V. For minimal conduction loss, 4.5 V or higher gate drive is recommended.

What is the thermal resistance from junction to mounting base, and how should it be applied in thermal design?

R_th(j-mb) is 1.4–2.45 K/W, measured per Figure 4. In thermal design, this value links junction temperature to the temperature of the PCB copper pad under the mounting base. To maintain T_j ≤ 150 °C at 51 W P_tot, the mounting base must stay ≤ 115 °C - achievable with ≥200 mm² 2-oz copper area and minimal thermal interface resistance.