Nexperia USA Inc. PSMN7R2-100YSFX

Overview

PSMN7R2-100YSFX from Nexperia is a 100 V, 6.9 mΩ N-channel MOSFET in LFPAK56 (SOT669) package, qualified to 175 °C junction temperature and optimized for high-efficiency switching in industrial and consumer power stages. It delivers 111 A continuous drain current at T_mb = 25 °C, features low Q_G × R_DS(on) figure-of-merit (50 nC × 6.9 mΩ), and supports synchronous rectification in AC-DC adapters.

For engineers reviewing the PSMN7R2-100YSFX datasheet, PSMN7R2-100YSFX pinout, PSMN7R2-100YSFX application, or PSMN7R2-100YSFX equivalent, this page provides verified thermal resistance (R_th(j-mb) = 0.69 K/W), avalanche energy rating (E_AS = 173 mJ), gate charge profile (Q_G(tot) = 50 nC), and LFPAK56 mounting-base thermal interface details critical for PCB layout and thermal design.

Technical Context

This NextPower MOSFET uses trench-gate superjunction technology to achieve low R_DS(on) while maintaining robust avalanche ruggedness and fast switching dynamics. Its 4-terminal LFPAK56 package separates source terminals (pins 1–3) from the drain-connected mounting base (mb), enabling low-inductance source return paths and efficient heat extraction via the exposed copper base.

The device operates with standard-level gate drive (V_GS(th) = 3.4–4 V, V_GS(pl) ≈ 4.6 V), exhibits low reverse recovery charge (Q_r = 23 nC), and maintains stable R_DS(on) up to 175 °C (12.7–15.7 mΩ at T_j = 175 °C), supporting high-reliability operation in thermally constrained environments.

Key Specifications

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal, single-ended surface-mount plastic package with an exposed copper mounting base electrically connected to the drain. Its footprint supports both reflow and wave soldering, and the large thermal pad enables direct PCB copper area coupling for low thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N10F7 and IXTP110N10T, PSMN7R2-100YSFX offers superior thermal performance (0.69 K/W vs. ≥1.2 K/W), wave-solder compatibility, and guaranteed avalanche ruggedness - making it the preferred choice for compact, high-reliability, high-frequency power conversion where PCB area and thermal management are constrained.

Availability

PSMN7R2-100YSFX is available at Aetrix Electronics and suitable for USB-PD fast-charge adapters, BLDC motor drives, and 48 V DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for PSMN7R2-100YSFX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for power management, logic, and analog applications.

This device belongs to the NextPower series - engineered specifically for high-efficiency, high-reliability switching in industrial, consumer, and computing power supplies where thermal robustness and avalanche immunity are mandatory.

FAQ

What is the maximum continuous drain current for PSMN7R2-100YSFX at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is 78 A per the datasheet Fig. 2. This value reflects thermal limitation of the LFPAK56 package under realistic PCB copper area (25.4 mm², 70 µm thick), not silicon capability alone. Derating follows a linear curve from 111 A at 25 °C to zero at ~165 °C.

Is PSMN7R2-100YSFX suitable for use in automotive applications?

No - PSMN7R2-100YSFX is not AEC-Q101 qualified and is explicitly designated for industrial and consumer applications per its product data sheet. It lacks automotive-grade screening, extended temperature validation beyond 175 °C junction, and zero-defect manufacturing controls required for automotive use.

How does the LFPAK56 package improve thermal performance compared to SO-8?

LFPAK56 reduces R_th(j-mb) to 0.69 K/W versus ~3.5 K/W for standard SO-8 due to its exposed copper mounting base directly bonded to the die's drain. This enables >2× higher power dissipation at equal ΔT and eliminates reliance on internal leadframe conduction, making thermal design more predictable and PCB-centric.

Does PSMN7R2-100YSFX require a negative gate voltage for safe turn-off in high-dV/dt environments?

No - the device has a V_GS rating of ±20 V and is designed for standard-level 0–10 V gate drive. Its low Q_GD (10 nC typ.) and high gate threshold stability (ΔV_GS(th)/ΔT = −7.5 mV/K) prevent false turn-on even under dV/dt up to 50 V/ns, eliminating need for negative bias in most applications.