Nexperia USA Inc. PSMN7R5-30MLDX

Overview

PSMN7R5-30MLDX from Nexperia is an N-channel 30 V, 7.5 mΩ logic-level MOSFET in LFPAK33 (SOT1210) package, utilizing NextPowerS3 SchottkyPlus technology. It delivers ultra-low gate charge (Q_G(tot) = 5.8–8.8 nC), soft-recovery diode (s-factor > 1.2), and optimized 4.5 V gate drive for high-efficiency synchronous rectification in telecom DC-DC converters.

For engineers reviewing the PSMN7R5-30MLDX datasheet, PSMN7R5-30MLDX pinout, PSMN7R5-30MLDX application, or PSMN7R5-30MLDX equivalent, key selection criteria include R_DS(on) at 4.5 V (8.2–10.3 mΩ), thermal resistance R_th(j-mb) (3.1–3.32 K/W), avalanche energy rating (28.3 mJ), soft-recovery performance, and LFPAK33 mounting base connectivity.

Technical Context

This MOSFET employs Nexperia's "SchottkyPlus" technology to achieve Schottky-like reverse recovery behavior (t_rr = 23–46 ns, Q_r = 11–22 nC) without high leakage-IDSS < 0.26 µA at 125 °C. Its gate threshold voltage (V_GS(th) = 1.2–2.2 V) and low Q_GD (1.7–2.5 nC) enable robust turn-on at 4.5 V with minimal switching loss.

The LFPAK33 package features a clip-bonded die, exposed mounting base connected to drain, and solderable source/gate terminals (pins 1–3 = source, pin 4 = gate, mb = drain). This structure achieves low parasitic inductance and R_th(j-mb) of 3.1 K/W, supporting high-current operation up to 57 A at T_mb = 25 °C.

Key Specifications

Pinout & Package

PSMN7R5-30MLDX uses the LFPAK33 (SOT1210) surface-mount package: compact 3.2 × 2.5 mm footprint with exposed mounting base (drain-connected), clip-bonded die, and no wire bonds or adhesive. Thermal performance is enhanced by direct die-to-base conduction and low-inductance source/gate layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with PSMN7R5-30MLDX, PSMN2R0-30YLH trades higher gate charge for lower conduction loss, while DMTH3007LPS offers extended voltage rating at the cost of thermal performance and package compatibility-making PSMN7R5-30MLDX optimal for space-constrained, high-frequency 24–30 V telecom/server POL designs.

Availability

PSMN7R5-30MLDX is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and GPU power delivery systems requiring stable component supply, high thermal reliability, and consistent logic-level gate drive behavior.

Supply support for PSMN7R5-30MLDX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

This device belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in telecom infrastructure, data center power supplies, and motor control-leveraging SchottkyPlus technology to eliminate trade-offs between diode performance and leakage.

FAQ

What is the maximum continuous drain current for PSMN7R5-30MLDX at 100 °C mounting base temperature?

The datasheet specifies 40 A continuous drain current at T_mb = 100 °C and V_GS = 10 V (Figure 2). This derating reflects thermal limits of the LFPAK33 package and ensures safe operation within its 3.1 K/W R_th(j-mb) specification without exceeding 175 °C junction temperature.

Does PSMN7R5-30MLDX have avalanche capability, and is it production-tested?

Yes-PSMN7R5-30MLDX is rated for 28.3 mJ non-repetitive drain-source avalanche energy (E_AS) under defined conditions (V_GS = 10 V, I_D = 15 A, V_sup ≤ 30 V), and this parameter is protected by 100% production test per the datasheet's limiting values table.

How does the "SchottkyPlus" body diode differ from a standard MOSFET body diode?

SchottkyPlus delivers soft reverse recovery (s-factor > 1.2) and low t_rr (23–46 ns) like a Schottky diode, but with leakage < 1 µA at 25 °C-unlike true Schottky diodes which exhibit µA-to-mA leakage. This is achieved through proprietary process tuning, not an integrated discrete Schottky.

Can PSMN7R5-30MLDX be used with 3.3 V gate drive?

No-while V_GS(th) starts at 1.2 V, the datasheet confirms R_DS(on) is characterized only down to 4.5 V, and typical R_DS(on) at 3.3 V is not specified. At 3.3 V, conduction loss increases significantly; use requires validation of on-resistance and thermal margin in the target application.