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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN7R6-100BSEJ

Name: PSMN7R6-100BSEJ
Brand: Nexperia USA Inc.
SKU: PSMN7R6-100BSEJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN7R6-100BSEJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PSMN7R6-100BSEJ.pdf

Description:: MOSFET N-CH 100V 75A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:4,740

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Product details

Overview

PSMN7R6-100BSE from Nexperia is a standard-level N-channel MOSFET in D2PAK (SOT404) package, rated for 100 V drain-source voltage, 7.6 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 75 A continuous drain current at T_mb = 100 °C and supports unclamped avalanche energy up to 426 mJ - engineered for hot-swap controllers and 48 V telecom backplane load switching.

For engineers reviewing the PSMN7R6-100BSE datasheet, PSMN7R6-100BSE pinout, PSMN7R6-100BSE application, or PSMN7R6-100BSE equivalent, this device is selected for high-current linear-mode operation, robust inrush handling, low conduction loss, and thermal stability in power distribution systems requiring >100 A peak capability and >400 mJ avalanche ruggedness.

Technical Context

This MOSFET features an enhanced forward-biased safe operating area (FBSOA), enabling stable operation under high V_DS/I_D stress during soft-start and electronic fuse duty cycles. Its R_DS(on) increases only 3.2× from 25 °C to 175 °C (6.5 → 20.5 mΩ), supporting predictable thermal derating in compact heatsink designs.

The gate charge profile shows Q_G(tot) = 128 nC and Q_GD = 41 nC at V_DS = 50 V, ID = 25 A, indicating fast but controllable switching with moderate drive strength requirements. The gate threshold voltage (V_GS(th)) ranges from 1 V (T_j = 175 °C) to 4.6 V (T_j = −55 °C), ensuring reliable turn-on across industrial temperature extremes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage compatible with 48 V telecom systems with ≥2× safety margin against transients.
R_DS(on)	7.6 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables ≤1.9 W conduction loss at 50 A, reducing heatsink size and improving efficiency.
I_D (cont)	75 A @ T_mb = 100 °C - Package-limited current rating suitable for high-power load switches without forced air cooling.
E_AS	426 mJ - Unclamped avalanche energy at I_D = 75 A, V_sup ≤ 100 V, R_GS = 50 Ω - Supports reliable operation during inductive turn-off faults in hot-swap circuits.
R_th(j-mb)	0.42–0.51 K/W - Low junction-to-mounting-base thermal resistance enables direct PCB copper pad thermal coupling for high-power dissipation.
Q_G(tot)	128 nC - Total gate charge determines driver power requirement; compatible with standard 1–2 A gate drivers at ≤1 MHz switching.
V_GS(th)	2–4 V (typ) @ T_j = 25 °C - Ensures clean turn-on with standard 5 V logic or 3.3 V microcontroller outputs via level-shifting.

Pinout & Package

D2PAK (SOT404) plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base (mb) electrically connected to drain and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; requires <130 nC total charge for full enhancement; isolated from drain/source by oxide layer.
2	Drain (D)	Main high-side current path; internally bonded to mounting base - must be connected to system ground plane or heatsink for thermal management.
3	Source (S)	Reference node for gate drive and current sensing; forms return path for load current; not electrically isolated from mounting base.
mb	Mounting Base	Thermal and electrical extension of drain; provides <0.5 K/W thermal path to heatsink; no separate electrical connection required.

Key Features

Feature	Design Value
Enhanced FBSOA	Supports linear-mode operation up to 100 V × 75 A (7.5 kW) for >100 µs - critical for controlled soft-start and electronic fuse current limiting.
Low R_DS(on)	6.5 mΩ typ at 25 °C enables <1.6 W conduction loss at 50 A - reduces thermal stress and improves system efficiency in 48 V telecom power rails.
Avalanche ruggedness	426 mJ non-repetitive E_AS allows safe turn-off into inductive loads without external snubbers in hot-swap applications.
175 °C qualification	Rated for continuous operation at T_j = 175 °C - ensures reliability in sealed enclosures or high-ambient environments like base station power modules.
Standard-level gate drive	V_GS(th) = 2–4 V enables direct interface with 3.3 V/5 V logic without gate drivers - simplifies control circuitry in load switch designs.

Applications

Electronic Fuse

Hot Swap

Use Scenario: Protecting 48 V backplane from overcurrent during board insertion or fault conditions.

IC Role / Device Role / Timing Role: High-side current-controlled switch operating in linear mode to limit fault current to safe levels.

Use Value: 426 mJ avalanche energy and enhanced FBSOA allow sustained current limiting without destruction during 10–100 ms faults.

Use Scenario: Enabling live insertion/removal of FRUs (Field Replaceable Units) in telecom chassis without powering down the entire system.

IC Role / Device Role / Timing Role: Main power switch controlled by dedicated hot-swap controller (e.g., LTC4215) to manage inrush ramp rate.

Use Value: 7.6 mΩ R_DS(on) minimizes voltage drop and heat generation during steady-state operation after inrush completion.

Load Switch

Soft Start

Use Scenario: Sequencing power delivery to downstream DC-DC converters or FPGA banks in multi-rail systems.

IC Role / Device Role / Timing Role: High-current, low-loss pass element activated by enable signal to isolate subsystems.

Use Value: 75 A continuous rating and 0.42 K/W R_th(j-mb) support >100 W load switching with minimal thermal rise on standard 2 oz copper pads.

Use Scenario: Controlling ramp-up of input current to large bulk capacitance (e.g., 10,000 µF) on 48 V supply rails.

IC Role / Device Role / Timing Role: Linear-mode current regulator during startup phase before transitioning to saturation.

Use Value: Stable R_DS(on) temperature coefficient and FBSOA ensure predictable current slew rate and prevent thermal runaway during 10–500 ms ramp periods.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V, 110 A, R_DS(on) = 6.8 mΩ @ 10 V, TO-220FP package, R_th(j-a) = 65 K/W (no mounting base)	Lacks integrated mounting base; higher thermal resistance limits continuous current to ~40 A without heatsink	Prefer when cost-sensitive TO-220 layout exists and lower peak current (<60 A) suffices
IRF3205PBF	55 V, 110 A, R_DS(on) = 8.0 mΩ @ 10 V, TO-220 package, max V_DS insufficient for 48 V rail with transients	Not rated for 100 V - risks avalanche failure during 48 V system surges exceeding 60 V	Only acceptable in ≤36 V systems with strict transient suppression; unsuitable for telecom 48 V backplanes

Compared with STP110N10F7 and IRF3205PBF, PSMN7R6-100BSE uniquely combines 100 V rating, D2PAK thermal performance, and 426 mJ avalanche ruggedness - making it the only option qualified for unclamped linear-mode operation in 48 V hot-swap systems without external protection.

Availability

PSMN7R6-100BSE is available at Aetrix Electronics and suitable for telecom power distribution, industrial hot-swap modules, and 48 V server load switching requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PSMN7R6-100BSE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions - spun off from Philips and now part of Wingtech Group.

This device belongs to Nexperia's "NextPower Live" portfolio, designed specifically for high-efficiency, high-ruggedness power switching in telecom infrastructure, industrial power supplies, and enterprise computing systems.

FAQ

Is PSMN7R6-100BSE suitable for linear-mode operation in electronic fuse applications?

Yes. Its enhanced forward-biased safe operating area (FBSOA) and 426 mJ unclamped avalanche energy enable controlled linear-mode current limiting up to 100 V × 75 A for durations exceeding 100 µs - verified in Nexperia's Fig. 4 SOA curves and Fig. 3 avalanche rating plots.

What is the maximum continuous drain current at 25 °C ambient?

The datasheet specifies I_D = 75 A at T_mb = 100 °C, not ambient. At T_mb = 25 °C, thermal limits allow ~120 A continuous, but the package physically caps current at 75 A per Fig. 1 - meaning 75 A is the absolute maximum regardless of temperature, due to bond wire and leadframe constraints.

Does the mounting base require electrical isolation from the PCB ground plane?

No. The mounting base is electrically connected to the drain (Pin 2) and must be soldered directly to a large copper pour serving as both thermal sink and high-current return path. Isolation would compromise thermal performance and violate the device's safe operating area design.

Can PSMN7R6-100BSE replace IRF540N in existing 48 V hot-swap designs?

No. IRF540N has V_DS = 100 V but R_DS(on) = 44 mΩ and no specified avalanche energy - resulting in >10× higher conduction loss and no fault tolerance. PSMN7R6-100BSE requires PCB layout changes (D2PAK footprint, drain-connected thermal pad) but delivers superior thermal, efficiency, and ruggedness.

PSMN7R6-100BSEJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 128 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7110 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 296W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PSMN7R6-100BSEJ FAQ

1.How can I place an order for PSMN7R6-100BSEJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN7R6-100BSEJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN7R6-100BSEJ reliable?

The price and inventory of PSMN7R6-100BSEJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN7R6-100BSEJ is usually 5 days.

3.What payment methods are accepted for PSMN7R6-100BSEJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN7R6-100BSEJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN7R6-100BSEJ?

PSMN7R6-100BSEJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN7R6-100BSEJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN7R6-100BSEJ?

For technical support, including PSMN7R6-100BSEJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN7R6-100BSEJ requirements.

6.How does Aetrix verify that PSMN7R6-100BSEJ is sourced from the original manufacturer or authorized distributors?

All PSMN7R6-100BSEJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN7R6-100BSEJ meets industry standards.

7.What is the process for return or replacement of PSMN7R6-100BSEJ?

All PSMN7R6-100BSEJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN7R6-100BSEJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN7R6-100BSEJ part is unused and in its original packaging.

Return procedure for PSMN7R6-100BSEJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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