Nexperia USA Inc. PSMN7R6-60BS,118

Overview

PSMN7R6-60BS from Nexperia is a standard-level N-channel MOSFET in D2PAK (SOT404) package, rated for 60 V V_DS, 7.8 mΩ R_DS(on) at 10 V_GS/25 A/25 °C, 92 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-efficiency power switch in DC-DC converters, server power supplies, motor control, and load switching circuits.

For engineers reviewing the PSMN7R6-60BS datasheet, PSMN7R6-60BS pinout, PSMN7R6-60BS application, or PSMN7R6-60BS equivalent, key selection criteria include its 7.8 mΩ on-resistance at 10 V gate drive, 149 W total power dissipation at T_mb = 25 °C, 10.6 nC gate-drain charge, 38.7 nC total gate charge, and avalanche ruggedness of 110 mJ - all critical for thermal management and switching loss optimization in industrial and communications power systems.

Technical Context

This MOSFET employs a planar trench-gate structure optimized for low conduction and switching losses under standard-level gate drive (10 V). Its R_DS(on) remains stable across -55 °C to 175 °C, with typical value of 5.9 mΩ at 25 °C and 13.3 mΩ at 175 °C, enabling reliable operation in thermally demanding environments.

The device features an integrated source-drain diode with 0.86 V forward voltage at 25 A/25 °C and 40.4 ns reverse recovery time, supporting synchronous rectification and freewheeling in hard-switched topologies. Its 0.49 K/W typical junction-to-mounting-base thermal resistance ensures efficient heat transfer to heatsinks or PCB copper planes.

Key Specifications

Pinout & Package

Supplied in plastic single-ended surface-mounted D2PAK (SOT404) package with 3 leads (one lead cropped); mounting base (mb) is electrically connected to drain and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF1404PBF and STP75NF75, PSMN7R6-60BS offers superior thermal performance via D2PAK mounting base (0.49 K/W vs. >1.5 K/W), tighter R_DS(on) tolerance (5.9–7.8 mΩ vs. 3.5–4.5 mΩ but with higher Q_G), and guaranteed 175 °C operation - making it optimal for high-power-density, high-reliability industrial power stages.

Availability

PSMN7R6-60BS is available at Aetrix Electronics and suitable for DC-DC converters, server power supplies, and motor control applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial OEM programs.

Supply support for PSMN7R6-60BS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This part belongs to Nexperia's standard-level logic-compatible power MOSFET product line, engineered for robust performance in industrial power conversion, motor drives, and infrastructure equipment where thermal resilience and gate-drive simplicity are essential.

FAQ

What is the maximum continuous drain current for PSMN7R6-60BS at 100 °C mounting base temperature?

The maximum continuous drain current is 65 A at T_mb = 100 °C and V_GS = 10 V, as specified in Table 4 (Limiting Values). This reflects thermal derating from the 92 A rating at 25 °C due to reduced heat dissipation capability at elevated temperatures, and must be validated against actual PCB layout and heatsink performance.

Does PSMN7R6-60BS have an integrated body diode, and what are its key parameters?

Yes, it includes an integrated source-drain diode with 0.86 V forward voltage at 25 A/25 °C and 40.4 ns reverse recovery time (t_rr) under specified test conditions. The recovered charge (Q_r) is 56 nC, supporting use in freewheeling paths without external diodes in many medium-frequency switching applications.

Can PSMN7R6-60BS be driven directly by a 5 V microcontroller GPIO pin?

No - it is a standard-level MOSFET requiring ≥10 V gate drive for full enhancement and low R_DS(on). At 5 V_GS, V_GS(th) (2–4 V) is exceeded but R_DS(on) rises significantly (>50 mΩ), increasing conduction loss and thermal stress. A dedicated gate driver or level-shifting circuit is required for reliable operation.

What is the thermal resistance from junction to mounting base, and how should it be used in thermal design?

R_th(j-mb) is 0.49 K/W typical (max 1.01 K/W), measured between die junction and the exposed metal mounting base. In thermal design, this value must be combined with the thermal resistance of the heatsink or PCB copper plane attached to the mounting base to calculate total junction-to-ambient resistance and ensure T_j stays ≤175 °C under worst-case power dissipation.