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Nexperia USA Inc. PSMN7R6-60PS,127

Name: PSMN7R6-60PS,127
Brand: Nexperia USA Inc.
SKU: PSMN7R6-60PS,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN7R6-60PS,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN7R6-60PS,127.pdf

Description:: MOSFET N-CH 60V 92A TO220AB

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Product details

Overview

PSMN7R6-60PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 60 V drain-source voltage, 7.8 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 92 A continuous drain current at T_mb = 25 °C and supports high-efficiency load switching in industrial power supplies and motor control circuits.

For engineers reviewing the PSMN7R6-60PS datasheet, PSMN7R6-60PS pinout, PSMN7R6-60PS application, or PSMN7R6-60PS equivalent, this device is selected for its low conduction loss, standard gate drive compatibility (10 V), robust avalanche energy rating (110 mJ), and thermal performance with R_th(j-mb) as low as 0.49 K/W.

Technical Context

This MOSFET employs planar silicon technology optimized for standard-level gate drive (V_GS = 10 V), enabling direct interface with legacy logic-level controllers without level-shifting. Its R_DS(on) remains stable across -55 °C to 175 °C, with typical value of 5.9 mΩ at 25 °C and 13.3 mΩ at 175 °C.

The device integrates an intrinsic body diode with V_SD = 0.86 V at I_S = 25 A and T_j = 25 °C, and exhibits fast reverse recovery (t_rr = 40.4 ns, Q_r = 56 nC), supporting synchronous rectification and hard-switched DC-DC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V bus systems and 24 V industrial rails.
R_DS(on)	5.9 mΩ (typ) @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 40 A, critical for high-current load switches.
I_D	92 A @ T_mb = 25 °C - Supports high-power server PSU outputs and motor phase legs without parallel devices.
E_AS	110 mJ (unclamped) - Withstands single-pulse inductive energy surges in relay driving and solenoid control.
R_th(j-mb)	0.49 K/W (typ) - Allows >100 W dissipation with modest heatsink, simplifying thermal design in space-constrained enclosures.
Q_GD	10.6 nC - Low gate-drain charge minimizes Miller-induced turn-off delay, improving switching efficiency above 100 kHz.
V_GS(th)	2–4 V @ T_j = 25 °C - Ensures reliable turn-on with standard microcontroller GPIOs while avoiding false triggering.

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink-mounted mounting base connected internally to the drain terminal. Three leads: Gate (pin 1), Drain (pin 2 + mounting base), Source (pin 3).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control input requiring ≤20 V absolute max; 10 V nominal for full enhancement; low C_iss (2651 pF) eases driver selection.
2 (D) + mb	Drain / Mounting Base	Main high-side current path; mounting base is electrically tied to drain-requires isolation when heatsink is grounded.
3 (S)	Source	Power return node; referenced to gate drive; body diode anode; used for current sensing in low-side configurations.

Key Features

Feature	Design Value
High-temperature qualification	Rated for continuous operation up to T_j = 175 °C-enables deployment in sealed industrial enclosures without derating.
Low R_DS(on) temperature coefficient	R_DS(on) increases only 2.25× from 25 °C to 175 °C-maintains predictable conduction loss across wide ambient ranges.
Standard-level gate drive	Full enhancement at V_GS = 10 V-eliminates need for gate drivers in PLC I/O modules and DC-DC controller reference designs.
Avalanche ruggedness	110 mJ non-repetitive E_AS-tolerates inductive kickback in motor H-bridge freewheeling without external snubbers.
Fast body diode	t_rr = 40.4 ns, Q_r = 56 nC-reduces switching losses in synchronous buck converters operating at 300–500 kHz.

Applications

DC-to-DC Converters

Load Switching

Use Scenario: Primary-side switch in isolated 48 V–12 V flyback converters for telecom power shelves.

IC Role / Device Role / Timing Role: High-side main switch handling 5–10 A peak currents with 300 kHz PWM frequency.

Use Value: Low Q_GD (10.6 nC) and fast t_f (13 ns) minimize dead-time losses and improve light-load efficiency.

Use Scenario: Hot-swap protection and inrush limiting in 24 V industrial PLC backplanes.

IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery to field I/O modules.

Use Value: 7.8 mΩ R_DS(on) limits voltage drop to <0.3 V at 35 A, preserving downstream rail stability.

Motor Control

Server Power Supplies

Use Scenario: Half-bridge leg in 24 V brushed DC motor drives for factory automation actuators.

IC Role / Device Role / Timing Role: High-current switching element in H-bridge topology with PWM commutation.

Use Value: 175 °C T_j rating ensures reliability under sustained stall conditions and ambient temperatures up to 85 °C.

Use Scenario: OR-ing FET in redundant 12 V intermediate bus architecture for rack servers.

IC Role / Device Role / Timing Role: Bidirectional current-blocking switch preventing backfeed between parallel PSUs.

Use Value: Low V_SD (0.86 V) and fast t_rr reduce forward conduction loss and reverse recovery spikes during switchover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 28 mΩ @ 10 V; lower V_DS (55 V); TO-220 package; no 175 °C rating.	Not suitable for 60 V bus systems or high-temp industrial environments; higher conduction loss at >15 A.	Select only for cost-sensitive, low-power (<50 W), non-automotive applications where thermal margin is ample.
STP75NF75	R_DS(on) = 10.5 mΩ @ 10 V; V_DS = 75 V; TO-220; 175 °C rated; higher Q_G (120 nC).	Better voltage margin but slower switching due to 3× higher total gate charge-reduces efficiency above 100 kHz.	Prefer for 48 V/72 V battery systems needing headroom; avoid in high-frequency SMPS where switching loss dominates.

Compared with IRFZ44NPBF and STP75NF75, PSMN7R6-60PS uniquely balances low R_DS(on), 60 V rating, 175 °C capability, and moderate gate charge-making it optimal for thermally constrained, medium-frequency industrial power stages where both conduction and switching losses must be minimized.

Availability

PSMN7R6-60PS is available at Aetrix Electronics and suitable for DC-to-DC converters, load switching, motor control, and server power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for PSMN7R6-60PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

This part belongs to Nexperia's standard-level logic-compatible MOSFET product line, engineered for cost-effective, thermally robust switching in industrial power conversion, motor drives, and infrastructure equipment.

FAQ

Is PSMN7R6-60PS suitable for gate drive with 5 V microcontrollers?

No-PSMN7R6-60PS is a standard-level MOSFET requiring ≥10 V V_GS for full enhancement. At 5 V, R_DS(on) exceeds 50 mΩ, causing excessive conduction loss. Use logic-level alternatives like PSMN2R0-30YL if 5 V drive is mandatory.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 1 in the datasheet, continuous drain current drops to approximately 65 A at T_mb = 100 °C. This reflects thermal derating due to reduced heat transfer; actual usable current depends on heatsink thermal resistance and ambient airflow.

Does the mounting base require electrical isolation from the heatsink?

Yes-the mounting base is internally connected to the drain (pin 2). If the heatsink is grounded or at a different potential, dielectric isolation (e.g., mica washer + thermal paste) is mandatory to prevent short circuits and ensure safe operation.

Can PSMN7R6-60PS replace older 60 V MOSFETs like IRFZ44N in existing PCB layouts?

Yes-both use TO-220AB (SOT78) footprint and pinout (G-D-S), enabling drop-in replacement. However, verify gate drive strength: PSMN7R6-60PS has lower Q_G (38.7 nC vs. 67 nC), allowing faster switching but requiring updated layout for reduced gate loop inductance.

PSMN7R6-60PS,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 92A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 38.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2651 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 149W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN7R6-60PS,127 FAQ

1.How can I place an order for PSMN7R6-60PS,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN7R6-60PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN7R6-60PS,127 reliable?

The price and inventory of PSMN7R6-60PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN7R6-60PS,127 is usually 5 days.

3.What payment methods are accepted for PSMN7R6-60PS,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN7R6-60PS,127 transactions.

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4.How is shipping managed for PSMN7R6-60PS,127?

PSMN7R6-60PS,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN7R6-60PS,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN7R6-60PS,127?

For technical support, including PSMN7R6-60PS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN7R6-60PS,127 requirements.

6.How does Aetrix verify that PSMN7R6-60PS,127 is sourced from the original manufacturer or authorized distributors?

All PSMN7R6-60PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN7R6-60PS,127 meets industry standards.

7.What is the process for return or replacement of PSMN7R6-60PS,127?

All PSMN7R6-60PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN7R6-60PS,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN7R6-60PS,127 part is unused and in its original packaging.

Return procedure for PSMN7R6-60PS,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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