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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN7R8-100PSEQ

Name: PSMN7R8-100PSEQ
Brand: Nexperia USA Inc.
SKU: PSMN7R8-100PSEQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN7R8-100PSEQ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN7R8-100PSEQ.pdf

Description:: MOSFET N-CH 100V 100A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN7R8-100PSE from Nexperia is a standard-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 100 V drain-source voltage, 7.8 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and featuring enhanced safe operating area (SOA) for linear-mode robustness. It delivers 83 A continuous drain current at T_mb = 100 °C and supports high-energy unclamped avalanche events up to 315 mJ - ideal for hot-swap circuits in 48 V telecom backplane systems.

For engineers reviewing the PSMN7R8-100PSE datasheet, PSMN7R8-100PSE pinout, PSMN7R8-100PSE application, or PSMN7R8-100PSE equivalent, key selection criteria include SOA performance under in-rush stress, thermal resistance to mounting base (0.42 K/W typ), gate charge profile (128 nC total), and compatibility with standard-level gate drive (V_GS(th) = 2–4 V).

Technical Context

This MOSFET employs planar silicon technology optimized for rugged linear-mode operation, with SOA curves validated for DC, pulsed, and single-pulse avalanche conditions up to 100 V and 100 A. Its gate threshold voltage (2–4 V at 25 °C) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers.

The device integrates a monolithic source-drain diode with 0.8–1.2 V forward voltage at 25 A and exhibits low reverse recovery charge (210 nC), enabling efficient synchronous rectification or freewheeling in hard-switched topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V maximum - supports 48 V rail designs with ≥2× voltage margin against transients and ringing.
R_DS(on)	7.8 mΩ max at V_GS = 10 V, T_j = 25 °C - limits conduction loss to ≤4.9 W at 25 A, reducing heatsink requirements.
Q_G(tot)	128 nC typical - determines gate drive power and switching speed; compatible with common 1–2 A peak gate drivers.
E_AS	315 mJ non-repetitive avalanche energy - enables reliable operation during short-circuit or in-rush events without external clamping.
R_th(j-mb)	0.42 K/W typical - allows >200 W power dissipation with modest heatsinking when mounted to a thermally conductive baseplate.
I_D (cont)	83 A at T_mb = 100 °C - supports high-current load switching in industrial UPS and motor control stages.
V_GS(th)	2–4 V at T_j = 25 °C - ensures full enhancement with 3.3 V or 5 V microcontroller GPIO or dedicated gate drivers.

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink-mounted configuration, 3 leads, and mounting base electrically connected to drain. Thermal path optimized via metal tab contact to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤20 V absolute max rating; 0.83 Ω typical gate resistance affects drive loop damping.
2 (D)	Drain	Main high-side current path; internally bonded to mounting base - must be isolated from PCB ground unless drain-referenced topology.
3 (S)	Source	Reference node for gate drive; connects to load return or low-side switch node; carries full load current and diode recovery current.
Mounting Base (mb)	Drain extension	Electrically tied to drain pin; primary thermal interface - requires thermal paste and mechanical torque control per JEDEC spec.

Key Features

Feature	Design Value
Enhanced SOA	Validated linear-mode capability up to 100 V × 100 A DC - enables robust electronic fuse and soft-start implementation without derating.
Low R_DS(on)	7.8 mΩ max at 25 °C - reduces I²R losses by >30% vs. legacy 12 mΩ 100 V MOSFETs, improving system efficiency in continuous conduction.
Avalanche ruggedness	315 mJ E_AS - eliminates need for external TVS or snubbers in fault-tolerant 48 V hot-swap modules.
Integrated body diode	210 nC Q_r, 69 ns t_rr - supports bidirectional current flow in motor H-bridge freewheeling with predictable reverse recovery behavior.
Standard-level gate	V_GS(th) = 2–4 V - simplifies drive architecture by eliminating level shifters in microcontroller-based power sequencers.

Applications

Electronic Fuse

Hot-Swap / Soft-Start

Use Scenario: Protecting 48 V telecom backplane from overcurrent during board insertion or downstream short.

IC Role / Device Role / Timing Role: High-side current-limiting switch with controlled dI/dt ramp during turn-on and fast shutdown on fault detection.

Use Value: SOA robustness prevents thermal runaway during sustained 50–100 A in-rush, while 7.8 mΩ R_DS(on) minimizes voltage drop (<0.5 V at 60 A) across the fuse element.

Use Scenario: Gradually energizing capacitive loads in server PSUs or modular power supplies to limit in-rush surge.

IC Role / Device Role / Timing Role: Linear-mode controlled switch regulating voltage ramp rate via gate voltage slew control.

Use Value: Extended SOA enables stable operation at V_DS = 20–60 V and I_D = 30–80 A for >100 ms - avoiding snapback failure seen in non-SOA-optimized MOSFETs.

Uninterruptible Power Supplies

Motor Control

Use Scenario: Bidirectional battery isolation and backup path switching in online UPS systems with 48 V LiFePO₄ banks.

IC Role / Device Role / Timing Role: Synchronous rectifier and reverse-current blocking switch in DC-DC stage and battery interface.

Use Value: Low Q_r (210 nC) and fast t_rr (69 ns) reduce switching losses during commutation; avalanche rating handles bus transients during grid failover.

Use Scenario: Low-side switching in 24–48 V brushed DC or BLDC gate driver half-bridges for industrial actuators.

IC Role / Device Role / Timing Role: High-current, low-loss power stage switch handling PWM-driven motor phase currents up to 83 A.

Use Value: 0.42 K/W R_th(j-mb) enables direct heatsink mounting for compact thermal design; 128 nC Q_G supports 20–100 kHz PWM without excessive gate drive loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V, 110 A, R_DS(on) = 6.5 mΩ, but SOA not characterized for linear mode; Q_G = 145 nC.	Lacks published SOA curves - unsuitable for electronic fuse or soft-start where extended linear operation is required.	Prefer only when peak current >83 A and SOA is not critical; verify thermal design with higher Q_G.
IRF540NPBF	100 V, 33 A, R_DS(on) = 44 mΩ, SOA data limited; Q_G = 71 nC, R_th(j-mb) = 1.2 K/W.	Lower current rating and higher R_DS(on) increase conduction loss by >5× - impractical for >20 A continuous loads.	Acceptable only for low-power motor control or infrequent switching; avoid in telecom hot-swap or UPS due to SOA and thermal limitations.

Compared with STP110N10F7 and IRF540NPBF, PSMN7R8-100PSE uniquely balances high current (83 A), low R_DS(on) (7.8 mΩ), and verified SOA - making it the only option among the three qualified for sustained linear-mode operation in 48 V infrastructure systems.

Availability

PSMN7R8-100PSE is available at Aetrix Electronics and suitable for telecom power distribution, industrial UPS systems, and motor drive subsystems requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for PSMN7R8-100PSE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, serving automotive, industrial, and consumer markets with ISO/TS-certified manufacturing.

This device belongs to Nexperia's "NextPower Live" portfolio - engineered specifically for robust linear-mode operation in power management applications such as hot-swap, electronic fusing, and soft-start, where SOA and avalanche capability are critical.

FAQ

Is PSMN7R8-100PSE suitable for gate driving with 3.3 V microcontrollers?

Yes - its gate threshold voltage ranges from 2 V to 4 V at 25 °C, ensuring reliable turn-on with 3.3 V logic. However, full enhancement (low R_DS(on)) requires V_GS ≥ 10 V; for 3.3 V drive, use an external gate driver or level shifter to achieve optimal conduction loss.

What is the maximum continuous drain current at 25 °C ambient?

The datasheet specifies 100 A continuous drain current at T_mb = 25 °C (mounting base temperature), capped by package limitation - not ambient temperature. Actual usable current depends on heatsink thermal resistance; with R_th(m-b) = 0.5 K/W and T_mb ≤ 100 °C, 83 A is sustainable.

Does the mounting base require electrical isolation from the PCB?

Yes - the mounting base is internally connected to the drain terminal. When mounted to a heatsink that is grounded or referenced to another potential, electrical isolation (e.g., mica washer + thermal paste or isolating pad) is mandatory to prevent short circuits or ground loops in the system.

Can PSMN7R8-100PSE replace older 100 V MOSFETs like IRF540 in existing designs?

Only with validation - while pin-compatible in TO-220AB, PSMN7R8-100PSE has lower R_DS(on) (7.8 mΩ vs. 44 mΩ), higher current rating (83 A vs. 33 A), and superior SOA. Layout changes may be needed to manage increased power density and gate drive energy (128 nC vs. 71 nC); thermal and EMI re-characterization is recommended.

PSMN7R8-100PSEQ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 128 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7110 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 294W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN7R8-100PSEQ FAQ

1.How can I place an order for PSMN7R8-100PSEQ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN7R8-100PSEQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN7R8-100PSEQ reliable?

The price and inventory of PSMN7R8-100PSEQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN7R8-100PSEQ is usually 5 days.

3.What payment methods are accepted for PSMN7R8-100PSEQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN7R8-100PSEQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN7R8-100PSEQ?

PSMN7R8-100PSEQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN7R8-100PSEQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN7R8-100PSEQ?

For technical support, including PSMN7R8-100PSEQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN7R8-100PSEQ requirements.

6.How does Aetrix verify that PSMN7R8-100PSEQ is sourced from the original manufacturer or authorized distributors?

All PSMN7R8-100PSEQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN7R8-100PSEQ meets industry standards.

7.What is the process for return or replacement of PSMN7R8-100PSEQ?

All PSMN7R8-100PSEQ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN7R8-100PSEQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN7R8-100PSEQ part is unused and in its original packaging.

Return procedure for PSMN7R8-100PSEQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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