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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN7R8-120PSQ

Name: PSMN7R8-120PSQ
Brand: Nexperia USA Inc.
SKU: PSMN7R8-120PSQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN7R8-120PSQ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: PSMN7R8-120PSQ.pdf

Description:: MOSFET N-CH 120V 70A I2PAK

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Product details

Overview

PSMN7R8-120PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 120 V drain-source voltage, 7.9 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 70 A continuous drain current at T_mb = 25 °C and supports high-efficiency power conversion in industrial and communications power supplies.

For engineers reviewing the PSMN7R8-120PS datasheet, PSMN7R8-120PS pinout, PSMN7R8-120PS application, or PSMN7R8-120PS equivalent, key selection criteria include its 7.9 mΩ conduction resistance, 167 nC total gate charge, 349 W power dissipation capability, avalanche energy rating of 386 mJ, and compatibility with standard 10 V gate drive.

Technical Context

This MOSFET employs planar silicon technology optimized for low R_DS(on) and robust switching performance in hard-switched topologies. Its gate threshold voltage (V_GS(th)) ranges from 1 V to 4.6 V across -55 °C to 175 °C, enabling reliable turn-on with standard logic-level drivers.

The device features a built-in body diode with 75.7 ns reverse recovery time and 264 nC recovered charge, supporting synchronous rectification. Thermal resistance from junction to mounting base is 0.35–0.43 K/W, facilitating direct heatsink mounting for high-power operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - Maximum blocking voltage for use in 100 V-class DC bus or 85–264 VAC offline SMPS primary/secondary side
R_DS(on)	7.9 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1.98 W conduction loss at 50 A, critical for thermal management
I_D (cont)	70 A @ T_mb = 25 °C - Supports high-current output stages in server PSUs and motor drives without parallel devices
Q_G(tot)	167 nC - Determines gate driver strength requirement; compatible with common 1–2 A peak drivers
E_AS	386 mJ - Unclamped avalanche energy rating confirms ruggedness against inductive switching transients
R_th(j-mb)	0.35 K/W typ - Enables ~100 °C junction rise per 285 W dissipation when mounted on copper heatsink
C_iss	9473 pF - Input capacitance impacts gate drive loop stability and EMI filter design in high-frequency converters

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink mounting, 1 mounting hole, and 3 leads. Mounting base (mb) serves as drain connection and thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
1	G	Gate terminal - Accepts standard 10 V logic-level drive; internal gate resistance 0.39–1.56 Ω affects switching speed control
2	D	Drain terminal - Electrically and thermally connected to mounting base; must be isolated from heatsink unless system ground referenced
3	S	Source terminal - Reference node for gate drive; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
Low R_DS(on)	7.9 mΩ enables <2 W conduction loss at 50 A, reducing heatsink size and improving efficiency in 1–3 kW power supplies
175 °C Junction Rating	Extended thermal margin allows operation in sealed enclosures or high ambient environments without derating
Standard-Level Gate Drive	Compatible with 10 V gate drivers (e.g., IR2110, UCC27531), eliminating need for level shifters or charge pumps
Avalanche-Rugged Design	386 mJ non-repetitive E_AS supports reliable operation in flyback, LLC, and motor phase-leg circuits with inductive loads
TO-220AB Mechanical Robustness	Plastic package with metal tab ensures mechanical stability under thermal cycling and vibration in industrial equipment

Applications

AC-to-DC Power Supply

Synchronous Rectification

Use Scenario: Primary-side switch in 500 W–2 kW offline flyback or forward converters operating from 85–264 VAC input.

IC Role / Device Role: High-voltage power switch handling full mains-referred drain voltage and pulsed current up to 70 A peak.

Use Value: 120 V rating and 386 mJ avalanche energy prevent failure during line surges or transformer leakage spikes.

Use Scenario: Secondary-side rectifier in 12 V/50 A server PSU LLC resonant converter.

IC Role / Device Role: Low-loss replacement for Schottky diodes, conducting during synchronous gate-controlled conduction intervals.

Use Value: 7.9 mΩ R_DS(on) reduces conduction loss by >60% vs. 40 V Schottky, improving efficiency from 92% to 94.5%.

Motor Control

Industrial DC-DC Converter

Use Scenario: Half-bridge high-side switch in 3-phase BLDC inverter for HVAC compressors (200–500 W).

IC Role / Device Role: Fast-switching N-channel MOSFET driven via bootstrap gate driver, managing 100 A peak phase current.

Use Value: 167 nC Q_G(tot) and 50.5 nC Q_GD enable clean 100 kHz PWM with minimal shoot-through risk.

Use Scenario: Step-down switch in 48 V–12 V industrial DC-DC module for factory automation I/O modules.

IC Role / Device Role: Main power transistor in fixed-frequency 200 kHz buck converter delivering 30 A continuous output.

Use Value: 0.35 K/W R_th(j-mb) allows direct heatsink mounting without thermal interface pads, simplifying mechanical design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V V_DS, 7.5 mΩ R_DS(on), 110 A I_D, D²PAK package	Lower voltage rating limits use to ≤80 V DC bus; higher current rating requires larger PCB layout and gate drive	Select when 100 V rating suffices and D²PAK thermal performance is preferred over TO-220 mounting simplicity
IRFP4668PBF	150 V V_DS, 6.7 mΩ R_DS(on), 110 A I_D, TO-247 package	Higher voltage and current capability increase cost and board space; gate charge 220 nC demands stronger driver	Select when 150 V blocking and >70 A current are required, and TO-247 heatsinking infrastructure exists

Compared with STP110N10F7 and IRFP4668PBF, PSMN7R8-120PS offers optimal balance of 120 V rating, TO-220 mountability, and 7.9 mΩ R_DS(on) for cost-sensitive industrial power designs where 100–120 V operation and 50–70 A current are typical.

Availability

PSMN7R8-120PS is available at Aetrix Electronics and suitable for AC-to-DC power supplies, synchronous rectification circuits, and motor control inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN7R8-120PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, headquartered in Nijmegen, Netherlands.

This device belongs to Nexperia's standard-level Power MOSFET product line, engineered for robust performance in industrial power conversion, motor drives, and telecom infrastructure where reliability, thermal resilience, and gate-drive simplicity are essential.

FAQ

Is PSMN7R8-120PS suitable for gate drive with 5 V microcontroller outputs?

No. This is a standard-level MOSFET requiring ≥10 V V_GS for full enhancement. At 5 V, R_DS(on) rises above 25 mΩ, increasing conduction losses significantly. A dedicated gate driver (e.g., TC4420) or level-shifting circuit is required for MCU interfacing.

What is the maximum recommended mounting base temperature for continuous operation?

The datasheet specifies continuous drain current derating begins at T_mb = 25 °C, with 70 A rated only at that temperature. At T_mb = 100 °C, ID drops to 70 A (same value due to thermal design margin), but practical sustained operation should limit T_mb to ≤85 °C to maintain junction temperature below 150 °C under load.

Does PSMN7R8-120PS have avalanche-rated capability for unclamped inductive switching?

Yes. It is fully specified for non-repetitive drain-source avalanche with E_AS = 386 mJ at V_GS = 10 V, I_D = 70 A, T_j(init) = 25 °C, and R_GS = 50 Ω. This rating validates use in flyback snubberless designs and motor phase-leg freewheeling paths.

Can the TO-220AB package be mounted directly to an aluminum heatsink without insulation?

No. Pin 2 (Drain) is electrically connected to the mounting base. Direct metal-to-metal contact creates a short unless the heatsink is isolated from system ground. Use insulating thermal pads (e.g., Bergquist Sil-Pad 2000) or mica washers with thermal grease to maintain electrical isolation while preserving thermal performance.

PSMN7R8-120PSQ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 167 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9473 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 349W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

PSMN7R8-120PSQ FAQ

1.How can I place an order for PSMN7R8-120PSQ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN7R8-120PSQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN7R8-120PSQ reliable?

The price and inventory of PSMN7R8-120PSQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN7R8-120PSQ is usually 5 days.

3.What payment methods are accepted for PSMN7R8-120PSQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN7R8-120PSQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN7R8-120PSQ?

PSMN7R8-120PSQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN7R8-120PSQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN7R8-120PSQ?

For technical support, including PSMN7R8-120PSQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN7R8-120PSQ requirements.

6.How does Aetrix verify that PSMN7R8-120PSQ is sourced from the original manufacturer or authorized distributors?

All PSMN7R8-120PSQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN7R8-120PSQ meets industry standards.

7.What is the process for return or replacement of PSMN7R8-120PSQ?

All PSMN7R8-120PSQ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN7R8-120PSQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN7R8-120PSQ part is unused and in its original packaging.

Return procedure for PSMN7R8-120PSQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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