NXP Semiconductors PSMN8R0-30YLC,115

Overview

PSMN8R0-30YLC from NXP Semiconductors is a logic-level enhancement-mode N-channel MOSFET in LFPAK (SOT669) package, rated for 30 V V_DS, 7.9 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and optimized for 4.5 V gate drive using NextPower Superjunction technology. It delivers 54 A continuous drain current at T_mb = 25 °C and supports industrial DC-DC converters requiring high efficiency and thermal robustness up to 175 °C junction temperature.

For engineers reviewing the PSMN8R0-30YLC datasheet, PSMN8R0-30YLC pinout, PSMN8R0-30YLC application, or PSMN8R0-30YLC equivalent, key selection criteria include its ultra-low Q_G (7 nC @ 4.5 V), low R_DS(on) at logic-level drive, LFPAK package thermal resistance (R_th(j-mb) = 3.38 K/W), and avalanche energy rating (12 mJ).

Technical Context

This MOSFET employs NextPower Superjunction architecture to minimize conduction and switching losses simultaneously. Its gate charge profile-Q_G(tot) = 7 nC @ 4.5 V, Q_GD = 2.3 nC-enables fast, efficient switching in synchronous buck topologies with minimal drive power requirements.

The device features a thermally enhanced LFPAK package with mounting base connected to drain, enabling direct heatsinking and achieving R_th(j-mb) as low as 3.38 K/W. Its V_GS(th) range (1.05–1.95 V at 25 °C) ensures reliable turn-on with standard logic-level controllers while maintaining low leakage (I_DSS ≤ 1 μA @ 25 °C).

Key Specifications

Pinout & Package

PSMN8R0-30YLC uses the SOT669 (LFPAK; Power-SO8) plastic single-ended surface-mounted package with 4 leads and integrated mounting base connected to drain. The package measures 4.41 mm × 3.62 mm × 1.20 mm and features low parasitic inductance/resistance for high-frequency switching.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IPP040N04L and SiHL880E, PSMN8R0-30YLC offers superior gate charge efficiency (7 nC) and thermal performance (3.38 K/W) in the compact LFPAK form factor-making it optimal for high-density, high-frequency 30 V power stages where layout area and thermal management are critical.

Availability

PSMN8R0-30YLC is available at Aetrix Electronics and suitable for industrial DC-DC converters, load switching circuits, and synchronous buck regulators requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for PSMN8R0-30YLC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions, automotive processors, and high-performance analog/power products.

The PSMN8R0-30YLC belongs to NXP's NextPower Superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in industrial and communications power supplies where low gate charge and logic-level drive are essential.

FAQ

What is the maximum continuous drain current for PSMN8R0-30YLC at 100 °C mounting base temperature?

The PSMN8R0-30YLC supports 38 A continuous drain current at T_mb = 100 °C and V_GS = 10 V, as specified in Table 4 (Limiting values). This derating reflects thermal constraints under real-world PCB heatsinking conditions and ensures reliable operation without exceeding the 175 °C maximum junction temperature. The PSMN8R0-30YLC datasheet Figure 1 confirms this value across the full temperature range.

Does PSMN8R0-30YLC have avalanche capability, and what is its rated energy?

Yes, PSMN8R0-30YLC is rated for non-repetitive drain-source avalanche energy of 12 mJ under defined test conditions (V_GS = 10 V, T_j(init) = 25 °C, I_D = 54 A, V_sup ≤ 30 V, R_GS = 50 Ω, unclamped). This rating is documented in Table 4 and validated in Figure 3 of the PSMN8R0-30YLC datasheet, confirming ruggedness against inductive switching transients.

What is the gate-source threshold voltage range for PSMN8R0-30YLC, and how does it vary with temperature?

The PSMN8R0-30YLC has a V_GS(th) range of 1.05 V to 1.95 V at T_j = 25 °C (ID = 1 mA), narrowing to 0.5 V minimum at 150 °C and widening to 2.25 V maximum at –55 °C. This behavior is fully characterized in Table 6 and Figure 11 of the PSMN8R0-30YLC datasheet, ensuring predictable turn-on across industrial temperature extremes.

Can PSMN8R0-30YLC be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

Yes-PSMN8R0-30YLC is a logic-level MOSFET with V_GS(th) as low as 1.05 V and guaranteed enhancement at 4.5 V gate drive. At V_GS = 3.3 V, it delivers usable R_DS(on) (~12–15 mΩ depending on temperature), making direct GPIO drive feasible for low-current or moderate-efficiency applications. For full 7.9 mΩ performance, 4.5–10 V drive is recommended per Figure 7 in the PSMN8R0-30YLC datasheet.

What is the thermal resistance from junction to mounting base (R_th(j-mb)) for PSMN8R0-30YLC, and how is it measured?

The PSMN8R0-30YLC has a typical R_th(j-mb) of 3.38 K/W, with a maximum of 3.61 K/W, measured under standardized conditions per Figure 5 and Table 5 of the datasheet. This value assumes the mounting base is soldered to a 10 cm², 2-oz copper pad on a 4-layer PCB-enabling accurate thermal modeling for heatsinkless designs in space-constrained industrial modules.