Nexperia USA Inc. PSMN8R0-40HLX

Overview

PSMN8R0-40HL from Nexperia is a dual N-channel logic-level MOSFET in LFPAK56D (SOT1205) package, rated for 40 V V_DS, 9.4 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It integrates two independent trench-based MOSFETs optimized for high-efficiency synchronous rectification and BLDC motor phase switching in server power supplies and DC-DC converters.

For engineers reviewing the PSMN8R0-40HL datasheet, PSMN8R0-40HL pinout, PSMN8R0-40HL application, or PSMN8R0-40HL equivalent, key selection criteria include dual-FET integration in a single LFPAK56D footprint, 30 A continuous drain current capability at T_mb = 25 °C, repetitive avalanche rating, and copper-clip die attach for enhanced thermal performance and reliability.

Technical Context

This dual MOSFET uses Nexperia's TrenchMOS technology with separate gate and source terminals per channel (G1/S1 and G2/S2), enabling independent control of two power switches in half-bridge or dual-phase topologies. Its LFPAK56D package features solderable mounting base and low R_th(j-mb) of 2.84 K/W, supporting high-power density designs without external heatsinking.

The device exhibits logic-level gate drive compatibility (V_GS(th) typ. 1.7 V at 25 °C, max 2.45 V at −55 °C), low Q_G(tot) (15.7 nC), and fast switching (t_r = 19.8 ns, t_f = 18.2 ns), making it suitable for high-frequency synchronous rectification where gate drive loss and body diode recovery (Q_r = 12.1 nC) are critical.

Key Specifications

Pinout & Package

PSMN8R0-40HL is housed in the LFPAK56D (SOT1205) surface-mount package - an 8-lead dual-power SO8 variant with exposed mounting base for direct thermal transfer to PCB copper. The package uses copper-clip die attach and solder die bonding for low parasitic inductance and high reliability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with BSC014N06LS6 and SiZF300DT, PSMN8R0-40HL uniquely delivers dual logic-level switching in a single 4.5 mm × 5.3 mm footprint with guaranteed 5 V drive compatibility, 40 V rating, and 175 °C qualification - simplifying design for 48 V server and industrial motor control where integration, thermal robustness, and ease of drive matter most.

Availability

PSMN8R0-40HL is available at Aetrix Electronics and suitable for brushless DC motor control, high-efficiency server power supplies, DC-DC converter power stages, and high-performance synchronous rectification requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN8R0-40HL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions for automotive, industrial, and computing markets.

PSMN8R0-40HL belongs to Nexperia's LFPAK56D dual-MOSFET product line, engineered specifically for space-constrained, high-efficiency power conversion where thermal performance, logic-level drive, and avalanche ruggedness are mandatory.

FAQ

Is PSMN8R0-40HL suitable for 3.3 V microcontroller gate drive?

Yes. With a maximum V_GS(th) of 2.45 V at −55 °C and typical R_DS(on) of 9.4 mΩ at V_GS = 5 V, the device turns on fully using standard 3.3 V or 5 V GPIO outputs. Its logic-level threshold ensures robust operation across the full industrial temperature range without external level shifters.

What is the thermal resistance from junction to mounting base (R_th(j-mb))?

The specified R_th(j-mb) is 2.84 K/W under typical mounting conditions. This value reflects the copper-clip construction and solder die attach, enabling efficient heat transfer directly from the die to the PCB copper pour - critical for high-power-density designs without heatsinks.

Can the two MOSFETs be used in parallel for higher current?

No - the two FETs are electrically isolated (separate S1/G1 and S2/G2) and not internally matched for current sharing. They are intended for independent switching in half-bridge, dual-phase, or active-clamp configurations, not parallel operation. For higher current, use a single higher-rated device or external current-sharing design.

Does PSMN8R0-40HL have integrated ESD protection?

The datasheet does not specify on-chip ESD protection diodes. As a discrete power MOSFET, it relies on external layout practices (e.g., gate resistors, TVS clamps) for ESD robustness. Gate oxide is rated for ±10 V V_GS, so transient suppression is recommended in automated handling and system-level ESD environments.