Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PSMN8R0-40PS,127

Part No.:
PSMN8R0-40PS,127
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixPSMN8R0-40PS,127.pdf
Description:
MOSFET N-CH 40V 77A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,146

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PSMN8R0-40PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 40 V VDS, 7.6 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and qualified to 175 °C junction temperature. It delivers 77 A continuous drain current at Tmb = 25 °C and supports high-efficiency load switching in industrial power supplies and motor control circuits.

For engineers reviewing the PSMN8R0-40PS datasheet, PSMN8R0-40PS pinout, PSMN8R0-40PS application, or PSMN8R0-40PS equivalent, key selection criteria include its low RDS(on) at standard gate drive (10 V), robust avalanche energy rating (43 mJ), thermal resistance (1.2–1.74 K/W j-to-mb), and TO-220AB mounting base design optimized for heatsink integration.

Technical Context

This MOSFET uses planar silicon technology with optimized channel geometry to achieve low conduction loss while maintaining stable threshold voltage (VGS(th) = 2–4 V at 25 °C) across -55 °C to 175 °C. Its gate charge profile (QG(tot) = 21 nC, QGD = 3.8 nC) enables fast switching with moderate gate drive strength.

The integrated source-drain diode exhibits VSD = 0.85–1.2 V at IS = 25 A and Tj = 25 °C, with trr = 30 ns and Qr = 18 nC under specified recovery conditions-supporting synchronous rectification and freewheeling in DC-DC converters.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V maximum drain-source voltage - defines safe blocking capability in 36 V nominal systems and 48 V telecom/server rails.
RDS(on) 7.6 mΩ typical at VGS = 10 V, ID = 25 A, Tj = 25 °C - enables <1 W conduction loss at 36 A, critical for high-current load switches.
ID (cont) 77 A at Tmb = 25 °C - supports high-power density designs when mounted on adequately sized heatsinks.
EAS 43 mJ non-repetitive avalanche energy - provides margin against inductive turn-off transients in motor drives and relay snubbing.
Rth(j-mb) 1.2–1.74 K/W junction-to-mounting-base thermal resistance - determines heatsink sizing requirement for sustained power dissipation up to 86 W.
QGD 3.8 nC gate-drain charge - directly impacts Miller-induced switching delay and dv/dt immunity in hard-switched topologies.
VGS(th) 2–4 V at Tj = 25 °C - ensures reliable turn-on with standard logic-level or microcontroller GPIO drive without level-shifting.

Pinout & Package

PSMN8R0-40PS is housed in a plastic TO-220AB (SOT78) package with isolated mounting base connected to the drain terminal. The package features a single mounting hole and is designed for vertical heatsink attachment with electrical isolation between base and PCB.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control electrode; requires ≤20 V gate-source voltage; internal RG = 1.1 Ω limits high-frequency ringing.
2 (D) Drain Main current path input; electrically tied to mounting base - must be isolated from heatsink unless system ground reference permits.
3 (S) Source Current return path and gate reference node; forms common source configuration with low-inductance layout critical for EMI control.

Key Features

Feature Design Value
Standard-level gate drive compatibility Operates fully enhanced with 10 V gate drive - eliminates need for gate boosters in 5 V/3.3 V controller systems.
High-temperature qualification Rated for continuous operation up to 175 °C junction temperature - suitable for sealed industrial enclosures and high-ambient server applications.
Low gate charge QG(tot) = 21 nC at VDS = 20 V - reduces gate driver power loss and enables >500 kHz switching in SMPS designs.
Avalanche ruggedness 43 mJ unclamped inductive switching energy - protects against failure during overcurrent events without external snubbers.
Integrated body diode VSD = 0.85 V typical at 25 A - supports efficient freewheeling in buck converters and H-bridge motor control with predictable reverse recovery.

Applications

DC-DC Converters Load Switching

Use Scenario: Primary-side switch in 48 V input, 12 V output synchronous buck converter operating at 300 kHz.

IC Role / Device Role / Timing Role: High-side power switch handling peak currents up to 60 A with minimal conduction loss.

Use Value: 7.6 mΩ RDS(on) limits I²R loss to <2.7 W at 60 A, enabling >95 % efficiency without forced air cooling.

Use Scenario: Hot-swap controller for redundant 24 V power distribution in industrial PLC backplanes.

IC Role / Device Role / Timing Role: Inrush-limited main power switch with controlled turn-on via gate resistor network.

Use Value: 175 °C rating and 77 A continuous current support full-load operation in confined chassis with ambient up to 85 °C.

Motor Control Server Power Supplies

Use Scenario: Low-side switch in three-phase BLDC inverter driving 500 W fan motors.

IC Role / Device Role / Timing Role: PWM-controlled phase leg switch with fast fall time (4.7 ns) and low QGD for clean commutation.

Use Value: 309 A pulsed peak current rating handles motor stall conditions; 30 ns trr minimizes shoot-through risk during dead-time transitions.

Use Scenario: OR-ing FET in redundant 12 V intermediate bus architecture for AI accelerator racks.

IC Role / Device Role / Timing Role: Bidirectional current-blocking element with low forward drop and fast reverse recovery.

Use Value: Body diode VSD = 0.85 V reduces forward conduction loss by 35 % vs. Schottky alternatives; TO-220AB base enables direct heatsink mounting for thermal reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF540NPBF RDS(on) = 44 mΩ @ VGS = 10 V; lower current rating (33 A); TO-220 package with drain-connected tab. Higher conduction loss limits use to <15 A continuous loads; less suitable for high-efficiency server PSUs. Select only where cost sensitivity outweighs efficiency requirements and thermal budget allows higher RDS(on).
STP80NF55-08 RDS(on) = 8 mΩ @ VGS = 10 V; 80 A ID; similar TO-220AB package but higher QG (71 nC). Slower switching due to higher gate charge increases driver losses above 200 kHz; better for lower-frequency motor drives. Prefer for high-current, low-frequency (<100 kHz) applications where gate drive strength exceeds 1 A peak.

Compared with IRF540NPBF and STP80NF55-08, PSMN8R0-40PS offers the optimal balance of low RDS(on), moderate QG, and 175 °C rating-making it uniquely suited for compact, high-efficiency 48 V industrial and server power stages requiring both thermal headroom and fast switching.

Availability

PSMN8R0-40PS is available at Aetrix Electronics and suitable for DC-DC converters, motor control inverters, and server power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN8R0-40PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and logic ICs for automotive and industrial markets.

This device belongs to Nexperia's standard-level Power MOSFET portfolio, engineered for cost-sensitive yet thermally demanding applications such as industrial power conversion, motor drives, and infrastructure power systems.

FAQ

Is PSMN8R0-40PS suitable for gate drive with 5 V microcontrollers?

No. With a gate threshold voltage range of 2–4 V at 25 °C and typical VGS(pl) = 4.8 V, this MOSFET requires ≥10 V gate drive for full enhancement and minimal RDS(on). Using 5 V logic will result in partial turn-on and excessive conduction loss-external level-shifting or gate boosting is required.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 1 in the datasheet, the continuous drain current drops to 55 A at Tmb = 100 °C. This derating reflects thermal limitations of the TO-220AB package and must be applied in thermal design to avoid exceeding the 175 °C junction limit under sustained load.

Does the mounting base require electrical isolation from the heatsink?

Yes. Pin 2 (Drain) is internally connected to the mounting base. If the heatsink is grounded or referenced to a different potential than the drain node, an electrically isolating pad (e.g., mica or polymer film) must be used to prevent short circuits and ensure safe operation.

Can PSMN8R0-40PS replace a logic-level MOSFET in an existing design?

No. As a standard-level device, it is not optimized for 3.3 V or 5 V gate drive. Substituting it for a logic-level MOSFET (e.g., IRLB8721) without adjusting gate drive voltage will cause severe overheating and premature failure due to incomplete channel formation and elevated RDS(on).

PSMN8R0-40PS,127 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
77A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
7.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
21 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1262 pF @ 12 V
FET Feature:
-
Power Dissipation (Max):
86W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

PSMN8R0-40PS,127 FAQ

1.How can I place an order for PSMN8R0-40PS,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN8R0-40PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN8R0-40PS,127 reliable?

The price and inventory of PSMN8R0-40PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN8R0-40PS,127 is usually 5 days.

3.What payment methods are accepted for PSMN8R0-40PS,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN8R0-40PS,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN8R0-40PS,127?

PSMN8R0-40PS,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN8R0-40PS,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN8R0-40PS,127?

For technical support, including PSMN8R0-40PS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN8R0-40PS,127 requirements.

6.How does Aetrix verify that PSMN8R0-40PS,127 is sourced from the original manufacturer or authorized distributors?

All PSMN8R0-40PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN8R0-40PS,127 meets industry standards.

7.What is the process for return or replacement of PSMN8R0-40PS,127?

All PSMN8R0-40PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN8R0-40PS,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN8R0-40PS,127 part is unused and in its original packaging.

Return procedure for PSMN8R0-40PS,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PSMN8R0-40PS,127 Tags

  • PSMN8R0-40PS,127
  • PSMN8R0-40PS,127 PDF
  • PSMN8R0-40PS,127 Datasheet
  • PSMN8R0-40PS,127 Specifications
  • PSMN8R0-40PS,127 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PSMN8R0-40PS,127
  • Buy PSMN8R0-40PS,127
  • PSMN8R0-40PS,127 Price
  • PSMN8R0-40PS,127 Distributor
  • PSMN8R0-40PS,127 Supplier
  • PSMN8R0-40PS,127 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER