Nexperia USA Inc. PSMN8R0-80YLX

Overview

PSMN8R0-80YLX from Nexperia is an N-channel logic-level MOSFET rated for 80 V drain-source voltage, 8 mΩ R_DS(on) at V_GS = 5 V and 25 A, and 100 A continuous drain current (T_mb = 25 °C), housed in an LFPAK56 (SOT669) package. It serves as a high-efficiency power switch in synchronous rectification, USB-PD fast charging, and battery-powered motor control circuits where low gate drive voltage and high power density are critical.

For engineers reviewing the PSMN8R0-80YLX datasheet, PSMN8R0-80YLX pinout, PSMN8R0-80YLX application, or PSMN8R0-80YLX equivalent, key selection criteria include its 5 V logic-level gate threshold, avalanche-rated ruggedness (148 mJ), 0.63 K/W junction-to-mounting-base thermal resistance, and LFPAK56 package's optimized thermal and current-handling capability for compact power designs.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low R_DS(on) and low gate charge (Q_G(tot) = 54.7 nC at V_GS = 10 V), enabling fast switching with reduced conduction and switching losses. Its gate-source threshold voltage (V_GS(th)) ranges from 0.5 V (T_j = 175 °C) to 2.1 V (T_j = 25 °C), ensuring reliable turn-on with standard 5 V microcontroller outputs.

The device integrates an avalanche-rated body diode (V_SD = 0.82–1.2 V at I_S = 25 A) and exhibits robust safe operating area (SOA) up to 423 A peak drain current (t_p ≤ 10 µs). Thermal performance is defined by R_th(j-mb) = 0.63 K/W, supporting high-power operation when mounted on a thermally efficient PCB copper plane.

Key Specifications

Pinout & Package

PSMN8R0-80YLX uses the LFPAK56 (SOT669) surface-mount package - a 4-lead Power-SO8 variant with exposed mounting base electrically connected to the drain. This construction delivers superior thermal and current handling versus standard SO8, with footprint compatibility for automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IPP040N04L and SIHFU320-GE3, PSMN8R0-80YLX uniquely balances 80 V capability, 5 V logic drive, and LFPAK56 thermal performance - making it optimal for next-generation USB-PD, 48 V motor drives, and space-constrained high-efficiency power stages.

Availability

PSMN8R0-80YLX is available at Aetrix Electronics and suitable for USB-PD fast chargers, synchronous rectifiers in telecom PSUs, and battery-powered motor controllers requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for PSMN8R0-80YLX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

PSMN8R0-80YLX belongs to Nexperia's LFPAK logic-level MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in consumer, computing, and industrial equipment where thermal performance and ease of drive are paramount.

FAQ

Is PSMN8R0-80YLX suitable for 48 V automotive body electronics?

No - PSMN8R0-80YLX is not automotive-qualified per AEC-Q101. While its 80 V rating covers 48 V nominal systems, it lacks automotive-grade qualification, extended temperature validation, and zero-defect manufacturing controls required for vehicle applications. Use only in industrial or consumer equipment.

What is the maximum recommended PCB copper area for the mounting base?

Nexperia recommends ≥200 mm² of 2 oz (70 µm) copper connected directly to the mounting base pad, with thermal vias (≥8×0.3 mm diameter) to inner or back-side ground planes. This achieves near-datasheet R_th(j-mb) = 0.63 K/W and supports 100 A continuous operation at T_mb ≤ 60 °C.

Can PSMN8R0-80YLX replace a standard SO8 MOSFET on the same footprint?

Yes - LFPAK56 (SOT669) shares identical 5.0 × 6.0 mm outline and 1.27 mm lead pitch with Power-SO8, enabling drop-in replacement. However, the mounting base must be connected to drain (not ground), and thermal relief patterns must be adjusted to maximize copper area under the exposed pad.

Does the body diode support continuous reverse conduction in synchronous rectification?

Yes - the integrated body diode is rated for 100 A continuous source current (T_mb = 25 °C) and 423 A pulsed, with V_SD = 0.82–1.2 V. Its 36.3 nC recovered charge and 30.9 ns reverse recovery time enable efficient synchronous rectification up to 500 kHz without external Schottky assistance.