Nexperia USA Inc. PSMN8R3-40YS,115

Overview

PSMN8R3-40YS from Nexperia is a standard-level N-channel MOSFET in LFPAK (SOT669) package, rated for 40 V drain-source voltage, 8.6 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 70 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-efficiency power switch in DC-DC converters, lithium-ion battery protection circuits, and motor control stages.

For engineers reviewing the PSMN8R3-40YS datasheet, PSMN8R3-40YS pinout, PSMN8R3-40YS application, or PSMN8R3-40YS equivalent, key selection criteria include its 1.39 K/W junction-to-mounting-base thermal resistance, 4.5 nC gate-drain charge, 20 nC total gate charge, and LFPAK's mechanical robustness for high-power density board layouts.

Technical Context

This MOSFET employs Nexperia's Advanced TrenchMOS technology to achieve low on-resistance and low gate charge simultaneously, enabling high efficiency in hard-switched and synchronous rectifier topologies. Its LFPAK package delivers superior thermal performance over SO-8 with reduced parasitic inductance and enhanced mechanical reliability under thermal cycling.

The device features a gate threshold voltage of 2–4 V at 25 °C and maintains stable operation across -55 °C to +175 °C junction temperature range. Its unclamped avalanche energy rating of 33 mJ supports ruggedness in inductive switching applications without external snubbers.

Key Specifications

Pinout & Package

PSMN8R3-40YS uses the LFPAK (SOT669) plastic single-ended surface-mounted package - a 4-lead, power-optimized variant of Power SO8 with exposed drain pad for thermal and electrical performance. The package measures 4.1 × 3.8 mm footprint with 1.2 mm height and features solderable mounting base for low-impedance thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with PSMN2R0-30YL,115, this part trades 10 V voltage headroom for 4× higher R_DS(on); compared with IPB080N04LGATMA1, it sacrifices 0.5 mΩ R_DS(on) and 1 nC Q_GD for 30 % smaller footprint and 40 % lower thermal resistance via LFPAK mounting base.

Availability

PSMN8R3-40YS is available at Aetrix Electronics and suitable for DC-DC converters, lithium-ion battery protection circuits, and motor control systems requiring stable component supply across extended production lifecycles.

Supply support for PSMN8R3-40YS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors - discrete devices, logic ICs, and MOSFETs - with leadership in efficiency, reliability, and miniaturization for high-volume applications.

This device belongs to Nexperia's LFPAK MOSFET product line, engineered for high-power-density switching in industrial power supplies, battery management, and motor drives where thermal performance and package robustness are critical.

FAQ

What is the maximum continuous drain current for PSMN8R3-40YS at 100 °C mounting base temperature?

The maximum continuous drain current is 50 A at T_mb = 100 °C, as specified in Table 4 (Limiting values). This reflects thermal derating due to reduced heat dissipation capability at elevated ambient or board temperatures, and must be verified against actual PCB copper area and airflow conditions.

Does PSMN8R3-40YS have integrated gate protection diodes?

No, PSMN8R3-40YS does not include integrated gate protection diodes. Its absolute maximum V_GS rating is ±20 V, and external Zener clamping (e.g., 12 V TVS) is recommended in noisy environments or when driving with high-impedance sources to prevent gate oxide damage.

Can PSMN8R3-40YS be used in linear (analog) mode operation?

While not optimized for linear mode, the device supports limited linear operation with strict adherence to Safe Operating Area (SOA) limits shown in Figure 3. At V_DS = 10 V, maximum DC current is ~25 A; pulsed operation up to 100 µs allows higher currents, but thermal runaway risk increases rapidly above 100 °C junction temperature.

What is the typical source-drain diode forward voltage at 25 A and 25 °C junction temperature?

The typical source-drain diode forward voltage is 0.84 V at I_S = 25 A and T_j = 25 °C, per Table 6. This value rises to ~1.2 V at T_j = 175 °C, indicating moderate temperature coefficient - relevant for body-diode conduction during dead-time in half-bridge topologies.