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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN8R5-100ESFQ

Name: PSMN8R5-100ESFQ
Brand: Nexperia USA Inc.
SKU: PSMN8R5-100ESFQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN8R5-100ESFQ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: PSMN8R5-100ESFQ.pdf

Description:: MOSFET N-CHANNEL 100V 97A I2PAK

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Product details

Overview

PSMN8R5-100ESF from Nexperia is a 100 V, 8.8 mΩ N-channel MOSFET in I2PAK (SOT226) package, qualified to 175 °C junction temperature, optimized for fast-switching synchronous rectification and motor control with low Q_G × R_DS(on) figure-of-merit (44.5 nC × 8.8 mΩ), strong avalanche rating (281 mJ), and low body diode recovery charge (70 nC).

For engineers reviewing the PSMN8R5-100ESF datasheet, PSMN8R5-100ESF pinout, PSMN8R5-100ESF application, or PSMN8R5-100ESF equivalent, this device supports high-efficiency DC-DC conversion, BLDC gate drive, and half-bridge topologies where thermal robustness, low conduction loss at 25 A/100 °C, and unclamped avalanche ruggedness are critical selection criteria.

Technical Context

This NextPower MOSFET uses a trench-gated superjunction structure enabling low R_DS(on) (7.6 mΩ typ @ 25 °C) while maintaining fast switching (t_r = 26.8 ns, t_f = 23.6 ns) and low gate charge (Q_G(tot) = 44.5 nC). Its I2PAK mounting base is electrically connected to the drain, supporting low-inductance power loop design.

The device features a robust body diode with trr = 51 ns and Q_r = 70 nC, enabling efficient synchronous rectification without external Schottky replacement in flyback and resonant converters. Avalanche capability is 100% tested per cycle with E_AS = 281 mJ at T_j(init) = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V–72 V bus systems and solar MPPT stages
R_DS(on)	7.6 mΩ typ @ 25 °C - Enables ≤190 mW conduction loss at 25 A continuous current
Q_G(tot)	44.5 nC - Low gate drive energy requirement for 100 kHz–500 kHz hard-switched SMPS
E_AS	281 mJ - Unclamped avalanche energy rating ensures reliability during transient overvoltage events
trr / Q_r	51 ns / 70 nC - Fast, low-loss body diode recovery suitable for synchronous rectification
T_j(max)	175 °C - Extended thermal margin for industrial UPS, motor drives, and LED drivers
R_th(j-mb)	0.71 K/W typ - Enables 183 W power dissipation with moderate heatsinking on PCB copper plane

Pinout & Package

I2PAK (SOT226) package: plastic single-ended 3-terminal outline with 2.54 mm lead pitch, 11 mm × 10 mm × 4.3 mm body, and integral metal mounting base thermally and electrically tied to drain.

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control terminal; requires 10 V gate drive for full enhancement; threshold voltage 2–4 V
2	D (Drain)	Main high-side power terminal; internally bonded to mounting base for low-inductance heat path
3	S (Source)	Reference node for gate drive and current sensing; isolated from mounting base
mb	Mounting Base	Electrically connected to Drain; provides primary thermal interface to heatsink or PCB copper

Key Features

Feature	Design Value
Low Q_G × R_DS(on) FOM	392 pJ - Enables high-frequency operation with minimal switching + conduction loss trade-off
Avalanche rated & 100% tested	281 mJ E_AS - Guarantees robustness against inductive turn-off transients without derating
Optimized body diode	Q_r = 70 nC, t_rr = 51 ns - Reduces reverse recovery losses in synchronous rectifier mode
High-temperature qualification	Rated for continuous operation up to T_j = 175 °C - Supports sealed industrial enclosures and high-ambient environments
I2PAK low-height package	4.3 mm max height - Enables compact power stage layout with improved airflow and mechanical clearance

Applications

Synchronous Rectification

BLDC Motor Control

Use Scenario: Secondary-side switching in 65–100 W AC-DC adapters and telecom DC-DC bricks.

IC Role / Device Role / Timing Role: N-channel high-side synchronous rectifier replacing Schottky diode in LLC and flyback topologies.

Use Value: Reduces conduction loss by >40% vs. 100 V Schottky, enabling >94% efficiency at full load with no forced air cooling.

Use Scenario: Low-side switch in 3-phase 24–48 V BLDC inverters for e-bikes and power tools.

IC Role / Device Role / Timing Role: Power switch in half-bridge leg with 100 kHz PWM and <1 µs dead-time requirements.

Use Value: Low Q_GD/Q_G ratio (8.7/44.5 nC) minimizes Miller-induced shoot-through risk during fast edge transitions.

UPS Inverter Stage

Solar Microinverter

Use Scenario: Full-bridge output stage in 1–3 kVA line-interactive UPS converting 48 V battery to 230 V AC.

IC Role / Device Role / Timing Role: High-current, high-reliability switching element handling 97 A continuous drain current at T_mb = 25 °C.

Use Value: 183 W P_tot and 0.71 K/W R_th(j-mb) allow direct-mount heatsinking without thermal interface pads.

Use Scenario: DC link switching in 300–600 W microinverters interfacing PV panels to grid.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in interleaved boost stage operating at 100–200 kHz with 100 V input transients.

Use Value: 100 V V_DS rating and 281 mJ E_AS withstand PV open-circuit voltage surges without clamping circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK100ZFP	100 V, 0.12 Ω R_DS(on), TO-220FP package, higher R_DS(on) and Q_G	Limited to ≤100 kHz due to higher Q_G (110 nC) and slower switching	Prefer for cost-sensitive, lower-frequency (<50 kHz) industrial SMPS where thermal margin exceeds requirement
IXFH12N100P	100 V, 0.11 Ω R_DS(on), TO-247 package, higher R_DS(on), no avalanche rating	No 100% avalanche test; requires external snubbers in inductive loads	Prefer where peak current >150 A demands TO-247 mechanical robustness, but not for unclamped inductive switching

Compared with STP10NK100ZFP and IXFH12N100P, PSMN8R5-100ESF delivers 14× lower R_DS(on), 2.5× lower Q_G, and guaranteed avalanche ruggedness-making it uniquely suited for high-density, high-frequency, and thermally constrained synchronous rectifier and motor drive designs.

Availability

PSMN8R5-100ESF is available at Aetrix Electronics and suitable for synchronous rectification, BLDC motor control, and UPS inverter applications requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant packaging.

Supply support for PSMN8R5-100ESF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, serving automotive, industrial, and consumer markets with ISO/TS 16949-certified manufacturing.

This device belongs to the NextPower series-engineered specifically for high-efficiency, high-reliability power conversion in industrial motor drives, renewable energy inverters, and high-density power supplies where thermal resilience and avalanche robustness are non-negotiable.

FAQ

What is the maximum continuous drain current for PSMN8R5-100ESF at 100 °C mounting base temperature?

The maximum continuous drain current is 69 A when the mounting base temperature (T_mb) is 100 °C, as specified in Table 5 (Limiting Values) of the datasheet. This reflects derating from the 97 A rating at 25 °C due to thermal resistance and power dissipation limits, and assumes proper heatsinking via the integral mounting base.

Is the mounting base electrically isolated from the drain terminal?

No-the mounting base (mb) is electrically connected to the drain (Pin 2), as confirmed in Table 2 (Pinning information) and Figure 17 (Package outline). This connection enables low-inductance, low-resistance thermal and electrical paths but requires insulation between the heatsink and other system potentials.

Does PSMN8R5-100ESF support standard-level gate drive (10 V), or does it require logic-level or enhanced gate drive?

It is a standard-level gate drive MOSFET: full enhancement occurs at V_GS = 10 V, with R_DS(on) specified at that voltage (7.6 mΩ typ @ 25 °C). Gate threshold voltage ranges from 2 V to 4 V, so it is not logic-level (which typically requires ≤4.5 V), and operation below 8 V results in significantly higher R_DS(on) (e.g., 9–13.3 mΩ at V_GS = 7 V).

How is avalanche ruggedness verified for this part, and what test conditions apply?

Avalanche ruggedness is verified by 100% production testing per unclamped inductive switching (UIS) conditions: I_AS = 34 A, V_sup ≤ 100 V, R_GS = 50 Ω, V_GS = 10 V, and T_j(init) = 25 °C, yielding E_AS = 281 mJ. This test is performed on every unit and documented in Section 4 and Table 5 of the datasheet.

PSMN8R5-100ESFQ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 97A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 8.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 44.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3181 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 183W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

PSMN8R5-100ESFQ FAQ

1.How can I place an order for PSMN8R5-100ESFQ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN8R5-100ESFQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN8R5-100ESFQ reliable?

The price and inventory of PSMN8R5-100ESFQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN8R5-100ESFQ is usually 5 days.

3.What payment methods are accepted for PSMN8R5-100ESFQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN8R5-100ESFQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN8R5-100ESFQ?

PSMN8R5-100ESFQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN8R5-100ESFQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN8R5-100ESFQ?

For technical support, including PSMN8R5-100ESFQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN8R5-100ESFQ requirements.

6.How does Aetrix verify that PSMN8R5-100ESFQ is sourced from the original manufacturer or authorized distributors?

All PSMN8R5-100ESFQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN8R5-100ESFQ meets industry standards.

7.What is the process for return or replacement of PSMN8R5-100ESFQ?

All PSMN8R5-100ESFQ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN8R5-100ESFQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN8R5-100ESFQ part is unused and in its original packaging.

Return procedure for PSMN8R5-100ESFQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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