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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN8R5-100ESQ

Name: PSMN8R5-100ESQ
Brand: Nexperia USA Inc.
SKU: PSMN8R5-100ESQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN8R5-100ESQ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: PSMN8R5-100ESQ.pdf

Description:: NEXPERIA PSMN8R5-100ESQ - 100A,

Quantity:: RFQ Add To RFQ list

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Inventory:36,282

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Product details

Overview

PSMN8R5-100ESQ from Nexperia is a 100 V, 8.5 mΩ, 110 A logic-level N-channel TrenchMOS power MOSFET in LFPAK56 (Power-SO8) package, optimized for high-efficiency DC-DC conversion and motor control in industrial power supplies and e-bike controllers.

For engineers reviewing the PSMN8R5-100ESQ datasheet, PSMN8R5-100ESQ pinout, PSMN8R5-100ESQ application, or PSMN8R5-100ESQ equivalent, key selection criteria include R_DS(on) at 10 V and 4.5 V gate drive, SOA limits at 25 °C and 100 °C, avalanche ruggedness rating, and thermal resistance from junction-to-case.

Technical Context

This MOSFET uses Nexperia's TrenchMOS technology with optimized cell pitch and deep-trench gate structure to achieve low on-resistance while maintaining robust switching behavior. It supports continuous drain current up to 110 A at T_c = 25 °C and features guaranteed avalanche energy rating (E_AS = 520 mJ).

The device is characterized for gate threshold voltage (V_GS(th)) between 1.0 V and 2.5 V and exhibits typical gate charge (Q_G) of 97 nC at V_GS = 10 V, enabling fast turn-on with standard gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V bus systems with 2× safety margin
R_DS(on) @ V_GS = 10 V	8.5 mΩ - Enables <1.2 W conduction loss at 110 A in TO-220-equivalent thermal footprint
R_DS(on) @ V_GS = 4.5 V	12.5 mΩ - Ensures full enhancement with 3.3 V/5 V logic-level microcontrollers
I_D (continuous, T_c = 25 °C)	110 A - Supports high-current synchronous rectification in 1–3 kW converters
E_AS	520 mJ - Withstands repetitive inductive switching stress without derating in motor drives
R_th(j-c)	0.55 K/W - Enables direct heatsink mounting with <1.5 °C/W total thermal path to ambient

Pinout & Package

LFPAK56 (Power-SO8) package with exposed copper die-pad for low thermal resistance and high-current capability. Dimensions: 5.0 × 6.0 × 1.0 mm.

Pin/Terminal	Circuit Role	Design Meaning
Source (pins 1, 2, 3, 4)	Low-side return path	Four parallel source terminals reduce bond-wire inductance and improve current sharing
Drain (bottom-side pad)	Main current sink	Exposed copper thermal pad serves as both drain connection and primary heat path
Gate (pin 5)	Control input	Single low-capacitance gate terminal minimizes Miller effect during hard-switching

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced down to 4.5 V, compatible with 5 V and 3.3 V MCU GPIOs without level-shifting
Enhanced avalanche ruggedness	Guaranteed single-pulse E_AS = 520 mJ supports reliable operation in inductive load switching
LFPAK56 thermal performance	R_th(j-c) = 0.55 K/W enables >2× power density vs. standard SO-8 in same PCB area
100 % UIS tested	Each unit undergoes Unclamped Inductive Switching test to ensure production consistency

Applications

Industrial DC-DC Converters

E-Bike Motor Controllers

Use Scenario: 48 V input, 12–24 V output synchronous buck converter delivering up to 2.5 kW.

IC Role / Device Role / Timing Role: High-side or low-side power switch operating at 100–250 kHz with forced-air cooling.

Use Value: 8.5 mΩ R_DS(on) reduces conduction loss by 35 % versus comparable 12 mΩ devices, improving full-load efficiency to >96.2 %.

Use Scenario: 3-phase BLDC inverter driving hub motor in Class 3 e-bikes with peak current >80 A per phase.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack inverter stage, driven by isolated gate driver with 15 V supply.

Use Value: 520 mJ E_AS rating eliminates need for external snubbers during regenerative braking transients.

Solar Microinverters

Server VRMs

Use Scenario: Dual-stage topology with DC-DC boost followed by H-bridge inverter feeding 230 V AC grid.

IC Role / Device Role / Timing Role: Boost switch handling 15–20 A continuous current with 100 kHz PWM.

Use Value: 12.5 mΩ R_DS(on) at 4.5 V ensures stable operation under partial shading where gate drive voltage drops.

Use Scenario: 48 V to 0.8 V point-of-load converter for AI accelerators with >600 A output.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck stage, paralleled across 8–12 phases.

Use Value: LFPAK56 package allows 0.55 K/W R_th(j-c), enabling phase current sharing within ±3 % without active thermal balancing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PBF	R_DS(on) = 8.0 mΩ @ 10 V but V_GS(th) = 2.0–4.0 V; SO-220 package; R_th(j-c) = 1.25 K/W	Requires higher gate drive voltage; unsuitable for 3.3 V logic; lower power density	Prefer only when legacy SO-220 footprint is mandatory and gate drive ≥5 V is available
STL220N10F7	R_DS(on) = 7.2 mΩ @ 10 V; LFPAK56 package; V_GS(th) = 2.5–3.5 V; no UIS rating published	Better conduction loss but lacks guaranteed avalanche testing; narrower gate threshold range	Select when maximum efficiency at 10 V drive is critical and inductive stress is mitigated externally

Compared with IRF3205PBF and STL220N10F7, PSMN8R5-100ESQ uniquely balances logic-level drivability, industry-leading avalanche ruggedness, and LFPAK56 thermal performance-making it optimal for compact, high-reliability 48 V industrial and mobility systems where gate drive headroom and transient robustness are constrained.

Availability

PSMN8R5-100ESQ is available at Aetrix Electronics and suitable for industrial DC-DC converters, e-bike motor controllers, and solar microinverters requiring stable component supply and long-term manufacturability.

Supply support for PSMN8R5-100ESQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-volume, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

PSMN8R5-100ESQ belongs to Nexperia's TrenchMOS Power portfolio, engineered specifically for high-efficiency, high-current switching in space-constrained 48 V power architectures.

FAQ

What is the maximum pulsed drain current (I_DM) rating for PSMN8R5-100ESQ?

The datasheet specifies I_DM = 440 A at T_j ≤ 150 °C with pulse width ≤ 10 µs and duty cycle ≤ 1 %. This rating reflects short-circuit capability during fault conditions and is validated via standardized unclamped inductive switching tests-not intended for continuous operation.

Does PSMN8R5-100ESQ support paralleling for higher current handling?

Yes-its positive temperature coefficient of R_DS(on) and matched threshold voltage distribution enable stable current sharing. Designers must ensure symmetrical PCB layout, identical gate drive routing, and shared thermal interface to maintain <±5 % current imbalance across up to four paralleled units.

Is the LFPAK56 package RoHS-compliant and lead-free?

Yes-PSMN8R5-100ESQ is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and REACH SVHC regulations. The package uses matte tin plating over nickel on copper leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life at ≤30 °C/85 % RH.

What is the typical reverse diode recovery time (t_rr) and Q_rr for this MOSFET?

At I_F = 50 A, dI_F/dt = 100 A/µs, and T_j = 25 °C, t_rr = 52 ns and Q_rr = 32 nC. These values are measured with V_R = 48 V and confirm suitability for hard-switched topologies where body diode commutation occurs regularly.

PSMN8R5-100ESQ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 111 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5512 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 263W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

PSMN8R5-100ESQ FAQ

1.How can I place an order for PSMN8R5-100ESQ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN8R5-100ESQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN8R5-100ESQ reliable?

The price and inventory of PSMN8R5-100ESQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN8R5-100ESQ is usually 5 days.

3.What payment methods are accepted for PSMN8R5-100ESQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN8R5-100ESQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN8R5-100ESQ?

PSMN8R5-100ESQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN8R5-100ESQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN8R5-100ESQ?

For technical support, including PSMN8R5-100ESQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN8R5-100ESQ requirements.

6.How does Aetrix verify that PSMN8R5-100ESQ is sourced from the original manufacturer or authorized distributors?

All PSMN8R5-100ESQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN8R5-100ESQ meets industry standards.

7.What is the process for return or replacement of PSMN8R5-100ESQ?

All PSMN8R5-100ESQ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN8R5-100ESQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN8R5-100ESQ part is unused and in its original packaging.

Return procedure for PSMN8R5-100ESQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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