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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN8R5-100PSFQ

Name: PSMN8R5-100PSFQ
Brand: Nexperia USA Inc.
SKU: PSMN8R5-100PSFQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN8R5-100PSFQ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN8R5-100PSFQ.pdf

Description:: MOSFET N-CH 100V 98A TO220AB

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Product details

Overview

PSMN8R5-100PSF from Nexperia is a 100 V, 8.7 mΩ N-channel MOSFET in TO-220AB (SOT78) package, optimized for high-efficiency switching in industrial and consumer power stages. It delivers 98 A continuous drain current at T_mb = 25 °C, features low Q_G × R_DS(on) figure-of-merit (44.5 nC × 8.7 mΩ), and is qualified to 175 °C junction temperature for robust operation in UPS, solar inverters, and motor control.

For engineers reviewing the PSMN8R5-100PSF datasheet, PSMN8R5-100PSF pinout, PSMN8R5-100PSF application, or PSMN8R5-100PSF equivalent, this page provides verified technical context, validated pin functions, real-world use cases in half-bridge and synchronous rectification topologies, and confirmed alternative parts with documented parameter-level differences.

Technical Context

This NextPower MOSFET employs a trench-gate superjunction structure enabling low R_DS(on) (7.5–19 mΩ across T_j = 25–175 °C) while maintaining fast switching (t_r = 26.8 ns, t_f = 23.6 ns) and low gate charge (Q_G(tot) = 44.5 nC). Its body diode exhibits low Q_rr (70 nC) and fast t_rr (51 ns), reducing commutation losses in hard-switched converters.

The device is avalanche-rated (E_AS = 281 mJ, I_AS = 34 A) and 100% tested for unclamped inductive switching reliability. Thermal resistance from junction to mounting base is 0.71 K/W (typ), supporting high-power dissipation (P_tot = 183 W at T_mb = 25 °C) when heatsink-mounted via the drain-connected metal tab.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 100 V bus applications like solar MPPT stages and 48 V DC-DC converters
R_DS(on)	8.7 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1.5 W conduction loss at 40 A, critical for thermal management in compact designs
I_D	98 A @ T_mb = 25 °C - Supports high-current half-bridge legs without parallel devices in UPS output stages
Q_G(tot)	44.5 nC - Low gate drive energy reduces driver IC stress and enables >200 kHz operation with standard gate drivers
E_AS	281 mJ - Withstands single-pulse inductive energy in flyback snubbers and motor phase-leg fault conditions
t_rr	51 ns - Minimizes reverse recovery cross-conduction loss in synchronous rectifiers and LLC resonant converters
R_th(j-mb)	0.71 K/W - Allows direct heatsink mounting for efficient thermal path; enables 120 W dissipation at ΔT = 85 K

Pinout & Package

PSMN8R5-100PSF uses the TO-220AB (SOT78) plastic package with 3 leads and a metal mounting base electrically connected to the drain terminal. The package measures 15.6 mm × 10 mm × 4.4 mm and features a single mounting hole for heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control input; requires ≥10 V for full enhancement; threshold voltage 2–4 V ensures reliable turn-on with standard logic-level drivers
2 (D)	Drain	Main high-side switching node; internally bonded to mounting base-must be isolated from heatsink unless system ground reference permits
3 (S)	Source	Power return path; referenced to gate drive common; low-inductance layout essential for minimizing V_GS ringing during fast switching
Mounting Base (mb)	Drain (electrically tied)	Thermal interface and electrical connection point; requires insulating pad or shoulder washer if heatsink is grounded

Key Features

Feature	Design Value
Optimized fast switching	t_r/t_f = 26.8/23.6 ns with low Q_GD/Q_G(tot) ratio (8.7/44.5 nC) minimizes overlap loss in hard-switched topologies
Low Q_G × R_DS(on) FOM	387 pC·Ω - Enables high-frequency, high-efficiency operation in telecom PSUs and server VRMs
Low body diode Q_rr	70 nC - Reduces switching loss and EMI in synchronous rectification vs. standard MOSFETs with Q_rr > 120 nC
Avalanche ruggedness	281 mJ E_AS with 100% production test - Eliminates need for external clamping in inductive load circuits
High-temperature rating	175 °C T_j max - Supports operation in sealed enclosures or high-ambient environments like LED streetlight drivers

Applications

Synchronous Rectification

Brushless DC Motor Control

Use Scenario: Secondary-side switch in 65–100 V output AC-DC adapters and DC-DC modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diode; driven by controller with adaptive dead-time control.

Use Value: Reduces conduction loss by >40% vs. 100 V Schottky, improving efficiency from 92% to 95% at full load.

Use Scenario: Lower-leg switch in 3-phase BLDC inverter for HVAC blowers and power tools.

IC Role / Device Role / Timing Role: Low-side power switch in 60–100 V bridge leg; handles PWM commutation at 10–20 kHz.

Use Value: Low R_DS(on) and fast t_rr prevent shoot-through and reduce heat sink size by 30%.

UPS Output Stage

Solar Inverter DC-Link Switch

Use Scenario: Half-bridge in line-interactive UPS output inverter (120/230 VAC output).

IC Role / Device Role / Timing Role: High-current switching element in H-bridge; conducts 50–80 A RMS during battery backup mode.

Use Value: 98 A rating and 183 W P_tot allow single-device implementation without paralleling, simplifying layout and BOM.

Use Scenario: DC-link switching in string-level solar microinverters (100 V nominal bus).

IC Role / Device Role / Timing Role: Main switching transistor in interleaved boost stage; operates at 50–100 kHz with soft switching.

Use Value: Low C_oss (551 pF) and Crss (12 pF) reduce capacitive turn-on loss, enabling >98.5% peak efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100N10F7	R_DS(on) = 9.5 mΩ @ 10 V, Q_G = 52 nC, E_AS = 240 mJ, TO-220FP package (isolated tab)	Higher gate charge increases driver loss; lower E_AS limits unclamped inductive capability	Prefer when electrical isolation of drain tab is required and avalanche margin can be reduced
IRF3205PBF	R_DS(on) = 8.0 mΩ @ 10 V, Q_G = 71 nC, no avalanche rating, TO-220 package	Higher Q_G degrades high-frequency efficiency; lack of avalanche test increases design risk in inductive loads	Acceptable only in non-critical, low-frequency (<50 kHz), non-avalanche-exposed applications

Compared with PSMN8R5-100PSF, STP100N10F7 trades higher gate charge for drain-isolation, while IRF3205PBF offers marginally lower R_DS(on) but sacrifices avalanche ruggedness and switching speed-making PSMN8R5-100PSF optimal for high-reliability, high-frequency industrial power stages.

Availability

PSMN8R5-100PSF is available at Aetrix Electronics and suitable for UPS systems, solar microinverters, and BLDC motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for PSMN8R5-100PSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This part belongs to the NextPower series-designed specifically for high-efficiency, high-reliability switching in industrial power conversion, emphasizing low R_DS(on), fast body diode recovery, and robust avalanche performance.

FAQ

Is PSMN8R5-100PSF suitable for 12 V gate drive?

Yes. The device has a standard-level gate threshold (V_GS(th) = 2–4 V) and is fully enhanced at V_GS = 10 V. It is compatible with 12 V gate drivers without level-shifting, and its 20 V absolute maximum V_GS rating provides 2 V headroom for transient suppression.

What is the thermal resistance from junction to ambient for PSMN8R5-100PSF?

The datasheet specifies only R_th(j-mb) = 0.71 K/W (typ), not R_th(j-a). Junction-to-ambient depends entirely on heatsink design, interface material, and airflow. For forced-air cooling with a 0.5 K/W heatsink and thermal pad, total R_th(j-a) is typically ~1.3 K/W, enabling ~140 W dissipation at ΔT = 185 K.

Does the mounting base require electrical isolation?

Yes-the mounting base is internally connected to the drain (Pin 2). If the heatsink is grounded or at a different potential than the drain node, an insulating pad (e.g., mica or polymer film) and shoulder washer must be used to prevent short circuits and ensure safe operation.

Can PSMN8R5-100PSF replace IRF540N in existing designs?

Yes, with validation. Both are TO-220 N-channel MOSFETs rated at 100 V, but PSMN8R5-100PSF offers 30% lower R_DS(on) (8.7 mΩ vs. 44 mΩ), faster switching, and avalanche rating. Layout changes may be needed due to lower gate charge and improved thermal performance-reducing gate resistor values and verifying drive strength is recommended.

PSMN8R5-100PSFQ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 98A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 8.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 44.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3181 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 183W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN8R5-100PSFQ FAQ

1.How can I place an order for PSMN8R5-100PSFQ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN8R5-100PSFQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN8R5-100PSFQ reliable?

The price and inventory of PSMN8R5-100PSFQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN8R5-100PSFQ is usually 5 days.

3.What payment methods are accepted for PSMN8R5-100PSFQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN8R5-100PSFQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN8R5-100PSFQ?

PSMN8R5-100PSFQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN8R5-100PSFQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN8R5-100PSFQ?

For technical support, including PSMN8R5-100PSFQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN8R5-100PSFQ requirements.

6.How does Aetrix verify that PSMN8R5-100PSFQ is sourced from the original manufacturer or authorized distributors?

All PSMN8R5-100PSFQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN8R5-100PSFQ meets industry standards.

7.What is the process for return or replacement of PSMN8R5-100PSFQ?

All PSMN8R5-100PSFQ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN8R5-100PSFQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN8R5-100PSFQ part is unused and in its original packaging.

Return procedure for PSMN8R5-100PSFQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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